Study of the growth mechanism of Cu2ZnSnS4 films fabricated by nanoparticle during the annealing process

Xingfeng Zhang, Masakazu Kobayashi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Cu2ZnSnS4 (CZTS) precursor was fabricated from a CZTS nano crystal ink, which was obtained by a ball-milling method. The precursor was then annealed in the sulfur atmosphere. The growth mechanism of CZTS was studied in this work. It was found that with the extension of annealing time, the grain size as well as the crystallinity was improved significantly. And growth of grains from domain area of CZTS nano particles was observed. The samples experienced a decomposition process during the annealing. Secondary phases, such as ZnS, SnS, CuS and CuSnS3, were detected at the beginning of annealing process. However, with the increase of annealing time, the secondary phases recombined to form uniform CZTS film, which lead to the growth of grain size and improvement of crystallinity. The growth mechanism of CZTS films during the annealing process was concluded as: CZTS(Nanoparticle)→(Cu2S, ZnS, SnxS)→CZTS (large grains).

    Original languageEnglish
    Title of host publication2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Proceedings
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages2306-2309
    Number of pages4
    ISBN (Electronic)9781509060931
    DOIs
    Publication statusPublished - 2016 Nov 3
    Event2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Shanghai, China
    Duration: 2016 Aug 82016 Aug 11

    Other

    Other2016 Progress In Electromagnetics Research Symposium, PIERS 2016
    CountryChina
    CityShanghai
    Period16/8/816/8/11

    Fingerprint

    Annealing
    Nanoparticles
    nanoparticles
    annealing
    crystallinity
    grain size
    Ball milling
    inks
    Ink
    balls
    sulfur
    Sulfur
    Decomposition
    decomposition
    atmospheres
    Crystals
    crystals

    ASJC Scopus subject areas

    • Instrumentation
    • Radiation
    • Electrical and Electronic Engineering
    • Atomic and Molecular Physics, and Optics

    Cite this

    Zhang, X., & Kobayashi, M. (2016). Study of the growth mechanism of Cu2ZnSnS4 films fabricated by nanoparticle during the annealing process. In 2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Proceedings (pp. 2306-2309). [7734940] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PIERS.2016.7734940

    Study of the growth mechanism of Cu2ZnSnS4 films fabricated by nanoparticle during the annealing process. / Zhang, Xingfeng; Kobayashi, Masakazu.

    2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. p. 2306-2309 7734940.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Zhang, X & Kobayashi, M 2016, Study of the growth mechanism of Cu2ZnSnS4 films fabricated by nanoparticle during the annealing process. in 2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Proceedings., 7734940, Institute of Electrical and Electronics Engineers Inc., pp. 2306-2309, 2016 Progress In Electromagnetics Research Symposium, PIERS 2016, Shanghai, China, 16/8/8. https://doi.org/10.1109/PIERS.2016.7734940
    Zhang X, Kobayashi M. Study of the growth mechanism of Cu2ZnSnS4 films fabricated by nanoparticle during the annealing process. In 2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2016. p. 2306-2309. 7734940 https://doi.org/10.1109/PIERS.2016.7734940
    Zhang, Xingfeng ; Kobayashi, Masakazu. / Study of the growth mechanism of Cu2ZnSnS4 films fabricated by nanoparticle during the annealing process. 2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 2306-2309
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