Study of the growth mechanism of Cu2ZnSnS4 films fabricated by nanoparticle during the annealing process

Xingfeng Zhang; Masakazu Kobayashi

doi:10.1109/PIERS.2016.7734940

Study of the growth mechanism of Cu₂ZnSnS₄ films fabricated by nanoparticle during the annealing process

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Cu₂ZnSnS₄ (CZTS) precursor was fabricated from a CZTS nano crystal ink, which was obtained by a ball-milling method. The precursor was then annealed in the sulfur atmosphere. The growth mechanism of CZTS was studied in this work. It was found that with the extension of annealing time, the grain size as well as the crystallinity was improved significantly. And growth of grains from domain area of CZTS nano particles was observed. The samples experienced a decomposition process during the annealing. Secondary phases, such as ZnS, SnS, CuS and CuSnS₃, were detected at the beginning of annealing process. However, with the increase of annealing time, the secondary phases recombined to form uniform CZTS film, which lead to the growth of grain size and improvement of crystallinity. The growth mechanism of CZTS films during the annealing process was concluded as: CZTS(Nanoparticle)→(Cu₂S, ZnS, Sn_xS)→CZTS (large grains).

Original language	English
Title of host publication	2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2306-2309
Number of pages	4
ISBN (Electronic)	9781509060931
DOIs	https://doi.org/10.1109/PIERS.2016.7734940
Publication status	Published - 2016 Nov 3
Event	2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Shanghai, China Duration: 2016 Aug 8 → 2016 Aug 11

Other

Other	2016 Progress In Electromagnetics Research Symposium, PIERS 2016
Country/Territory	China
City	Shanghai
Period	16/8/8 → 16/8/11

ASJC Scopus subject areas

Instrumentation
Radiation
Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/PIERS.2016.7734940

Cite this

Study of the growth mechanism of Cu₂ZnSnS₄ films fabricated by nanoparticle during the annealing process. / Zhang, Xingfeng; Kobayashi, Masakazu.

2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. p. 2306-2309 7734940.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhang, X & Kobayashi, M 2016, Study of the growth mechanism of Cu₂ZnSnS₄ films fabricated by nanoparticle during the annealing process. in 2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Proceedings., 7734940, Institute of Electrical and Electronics Engineers Inc., pp. 2306-2309, 2016 Progress In Electromagnetics Research Symposium, PIERS 2016, Shanghai, China, 16/8/8. https://doi.org/10.1109/PIERS.2016.7734940

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title = "Study of the growth mechanism of Cu2ZnSnS4 films fabricated by nanoparticle during the annealing process",

abstract = "Cu2ZnSnS4 (CZTS) precursor was fabricated from a CZTS nano crystal ink, which was obtained by a ball-milling method. The precursor was then annealed in the sulfur atmosphere. The growth mechanism of CZTS was studied in this work. It was found that with the extension of annealing time, the grain size as well as the crystallinity was improved significantly. And growth of grains from domain area of CZTS nano particles was observed. The samples experienced a decomposition process during the annealing. Secondary phases, such as ZnS, SnS, CuS and CuSnS3, were detected at the beginning of annealing process. However, with the increase of annealing time, the secondary phases recombined to form uniform CZTS film, which lead to the growth of grain size and improvement of crystallinity. The growth mechanism of CZTS films during the annealing process was concluded as: CZTS(Nanoparticle)→(Cu2S, ZnS, SnxS)→CZTS (large grains).",

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