Study on direct etching of poly(tetrafluoroethylene) by high-energy heavy ion beams

Hidehiro Tsubokura, Akihiro Oshima, Tomoko G. Oyama, Yuya Takasawa, Naoyuki Fukutake, Satoshi Okubo, Taeko Yoshikawa, Toshitaka Oka, Takeshi Murakami, Yoshimasa Hama, Masakazu Washio

    Research output: Contribution to journalArticle

    3 Citations (Scopus)


    Micro-fabrication of poly(tetrafluoroethylene) (PTFE) was carried out using a high-energy heavy ion beam in the MeV region. PTFE was irradiated with various ions (6MeV/u) under vacuum (<1.0×10-4Pa) at room temperature (298K). The surface of the irradiated PTFE was observed by laser microscopy and a scanning electron microscope (SEM). Micro-scale fabrications of PTFE were successfully performed by direct ion beam etching. Under our experimental conditions the etching proceeded more effectively by heavy ion beams (larger than N7+), compared with lower-energy ion beams (keV region). A larger atomic number (Z) of the irradiating ion induced higher etching rates in PTFE; the etching rate for Ne10+ and Xe54+ changed from 6.5×10-13 to 2.0×10-11μm/(ioncm-2), respectively. As a result we suggest that due to their high electronic stopping powers, etching could be efficiently achieved using high-energy ion beams.

    Original languageEnglish
    Pages (from-to)37-42
    Number of pages6
    JournalRadiation Physics and Chemistry
    Publication statusPublished - 2013 Nov



    • Direct etching
    • Heavy ion beam
    • LET
    • Micro-fabrication
    • PTFE
    • Stopping power

    ASJC Scopus subject areas

    • Radiation

    Cite this

    Tsubokura, H., Oshima, A., Oyama, T. G., Takasawa, Y., Fukutake, N., Okubo, S., Yoshikawa, T., Oka, T., Murakami, T., Hama, Y., & Washio, M. (2013). Study on direct etching of poly(tetrafluoroethylene) by high-energy heavy ion beams. Radiation Physics and Chemistry, 92, 37-42.