Study on reactive sputtering to deposit transparent conductive amorphous In2O3-ZnO films using an In-Zn alloy target

Naoki Tsukamoto, Sakae Sensui, Junjun Jia, Nobuto Oka, Yuzo Shigesato*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Amorphous indium-zinc-oxide films were deposited in the "transition region" by reactive sputtering using an In-Zn alloy target with a specially designed double feedback system. The cathode voltage showed a V- and circle-shaped curve as a function of O2 gas flow in the transition region, which differs from the S-shaped curve in Berg's model for reactive sputtering depositions. In-situ analyses with a quadrupole mass spectrometer combined with an energy analyzer revealed that the negative ions O-, O2-, InO-, and InO2-, with high kinetic energies corresponding to the cathode voltage, were generated at the partially oxidized target surface. Furthermore the positive ions O +, Ar+, In+, and Zn+ with rather low kinetic energies (around 10 eV) were confirmed to be generated by the charge exchange of sputtered neutral O, Ar, In and Zn atoms, respectively.

Original languageEnglish
Pages (from-to)49-52
Number of pages4
JournalThin Solid Films
Publication statusPublished - 2014 May 30
Externally publishedYes


  • Energetic negative ions
  • In-situ analysis
  • Positive ions
  • Reactive sputtering
  • Transparent conducting oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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