Study on role of inserted Pt intermediate layer deposited by atomic layer deposition for Cu-Cu quasi-direct bonding

Kosuke Yamada, Hiroyuki Kuwae, Takumi Kamibayashi, Shuichi Shoji, Wataru Momose, Jun Mizuno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recently, we developed Cu-Cu quasi-direct bonding with Pt intermediate layer deposited by atomic layer deposition (ALD). In this report, we study about a role of inserted Pt layer deposited by ALD. The improvement of bonding strength by quasi direct bonding was explained by two kinds of mechanisms.

Original languageEnglish
Title of host publicationProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9784904743072
DOIs
Publication statusPublished - 2019 May 1
Event6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
Duration: 2019 May 212019 May 25

Publication series

NameProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
CountryJapan
CityKanazawa, Ishikawa
Period19/5/2119/5/25

Fingerprint

Atomic layer deposition

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Yamada, K., Kuwae, H., Kamibayashi, T., Shoji, S., Momose, W., & Mizuno, J. (2019). Study on role of inserted Pt intermediate layer deposited by atomic layer deposition for Cu-Cu quasi-direct bonding. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 [8735244] (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2019.8735244

Study on role of inserted Pt intermediate layer deposited by atomic layer deposition for Cu-Cu quasi-direct bonding. / Yamada, Kosuke; Kuwae, Hiroyuki; Kamibayashi, Takumi; Shoji, Shuichi; Momose, Wataru; Mizuno, Jun.

Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8735244 (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamada, K, Kuwae, H, Kamibayashi, T, Shoji, S, Momose, W & Mizuno, J 2019, Study on role of inserted Pt intermediate layer deposited by atomic layer deposition for Cu-Cu quasi-direct bonding. in Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019., 8735244, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Institute of Electrical and Electronics Engineers Inc., 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Kanazawa, Ishikawa, Japan, 19/5/21. https://doi.org/10.23919/LTB-3D.2019.8735244
Yamada K, Kuwae H, Kamibayashi T, Shoji S, Momose W, Mizuno J. Study on role of inserted Pt intermediate layer deposited by atomic layer deposition for Cu-Cu quasi-direct bonding. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8735244. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). https://doi.org/10.23919/LTB-3D.2019.8735244
Yamada, Kosuke ; Kuwae, Hiroyuki ; Kamibayashi, Takumi ; Shoji, Shuichi ; Momose, Wataru ; Mizuno, Jun. / Study on role of inserted Pt intermediate layer deposited by atomic layer deposition for Cu-Cu quasi-direct bonding. Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).
@inproceedings{a6c689a04265436b924eccc12c5b1da8,
title = "Study on role of inserted Pt intermediate layer deposited by atomic layer deposition for Cu-Cu quasi-direct bonding",
abstract = "Recently, we developed Cu-Cu quasi-direct bonding with Pt intermediate layer deposited by atomic layer deposition (ALD). In this report, we study about a role of inserted Pt layer deposited by ALD. The improvement of bonding strength by quasi direct bonding was explained by two kinds of mechanisms.",
author = "Kosuke Yamada and Hiroyuki Kuwae and Takumi Kamibayashi and Shuichi Shoji and Wataru Momose and Jun Mizuno",
year = "2019",
month = "5",
day = "1",
doi = "10.23919/LTB-3D.2019.8735244",
language = "English",
series = "Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019",

}

TY - GEN

T1 - Study on role of inserted Pt intermediate layer deposited by atomic layer deposition for Cu-Cu quasi-direct bonding

AU - Yamada, Kosuke

AU - Kuwae, Hiroyuki

AU - Kamibayashi, Takumi

AU - Shoji, Shuichi

AU - Momose, Wataru

AU - Mizuno, Jun

PY - 2019/5/1

Y1 - 2019/5/1

N2 - Recently, we developed Cu-Cu quasi-direct bonding with Pt intermediate layer deposited by atomic layer deposition (ALD). In this report, we study about a role of inserted Pt layer deposited by ALD. The improvement of bonding strength by quasi direct bonding was explained by two kinds of mechanisms.

AB - Recently, we developed Cu-Cu quasi-direct bonding with Pt intermediate layer deposited by atomic layer deposition (ALD). In this report, we study about a role of inserted Pt layer deposited by ALD. The improvement of bonding strength by quasi direct bonding was explained by two kinds of mechanisms.

UR - http://www.scopus.com/inward/record.url?scp=85068364034&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85068364034&partnerID=8YFLogxK

U2 - 10.23919/LTB-3D.2019.8735244

DO - 10.23919/LTB-3D.2019.8735244

M3 - Conference contribution

AN - SCOPUS:85068364034

T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

PB - Institute of Electrical and Electronics Engineers Inc.

ER -