Sub-50-nm structure patterning by combining nanoimprint lithography and anisotropic wet etching without considering original mold resolution

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7 Citations (Scopus)

Abstract

A novel strategy for fabricating nanostructures was demonstrated that combined nanoimprint lithography and anisotropic wet etching. The resolution of proposed method does not depend on that of an original imprint mold. Atomically sharp V-grooves were formed by anisotropic wet etching using a SiO2 etching mask fabricated by nanoimprint lithography. Atomic scale precision was performed by anisotropic etchant of tetramethylammonium hydroxide solution with adding a small amount of surfactant at room temperature. Using the V-grooves as a template, Al2O3/Al was deposited and etched by angled Ar ion milling after planarization with thick resin. Sub-50-nm metal structures were achieved with 72% size reduction of the initial mold structure.

Original languageEnglish
Pages (from-to)39-42
Number of pages4
JournalMicroelectronic Engineering
Volume169
DOIs
Publication statusPublished - 2017 Feb 5

Fingerprint

Nanoimprint lithography
Anisotropic etching
Wet etching
V grooves
lithography
etching
Surface-Active Agents
Masks
Etching
Nanostructures
Surface active agents
etchants
Resins
Metals
Ions
resins
hydroxides
masks
templates
surfactants

Keywords

  • Anisotropic wet etching
  • Ar ion milling
  • Imprint mold
  • Nanoimprint
  • V-groove

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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title = "Sub-50-nm structure patterning by combining nanoimprint lithography and anisotropic wet etching without considering original mold resolution",
abstract = "A novel strategy for fabricating nanostructures was demonstrated that combined nanoimprint lithography and anisotropic wet etching. The resolution of proposed method does not depend on that of an original imprint mold. Atomically sharp V-grooves were formed by anisotropic wet etching using a SiO2 etching mask fabricated by nanoimprint lithography. Atomic scale precision was performed by anisotropic etchant of tetramethylammonium hydroxide solution with adding a small amount of surfactant at room temperature. Using the V-grooves as a template, Al2O3/Al was deposited and etched by angled Ar ion milling after planarization with thick resin. Sub-50-nm metal structures were achieved with 72{\%} size reduction of the initial mold structure.",
keywords = "Anisotropic wet etching, Ar ion milling, Imprint mold, Nanoimprint, V-groove",
author = "Hiroyuki Kuwae and Akiko Okada and Shuichi Shoji and Jun Mizuno",
year = "2017",
month = "2",
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doi = "10.1016/j.mee.2016.11.019",
language = "English",
volume = "169",
pages = "39--42",
journal = "Microelectronic Engineering",
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T1 - Sub-50-nm structure patterning by combining nanoimprint lithography and anisotropic wet etching without considering original mold resolution

AU - Kuwae, Hiroyuki

AU - Okada, Akiko

AU - Shoji, Shuichi

AU - Mizuno, Jun

PY - 2017/2/5

Y1 - 2017/2/5

N2 - A novel strategy for fabricating nanostructures was demonstrated that combined nanoimprint lithography and anisotropic wet etching. The resolution of proposed method does not depend on that of an original imprint mold. Atomically sharp V-grooves were formed by anisotropic wet etching using a SiO2 etching mask fabricated by nanoimprint lithography. Atomic scale precision was performed by anisotropic etchant of tetramethylammonium hydroxide solution with adding a small amount of surfactant at room temperature. Using the V-grooves as a template, Al2O3/Al was deposited and etched by angled Ar ion milling after planarization with thick resin. Sub-50-nm metal structures were achieved with 72% size reduction of the initial mold structure.

AB - A novel strategy for fabricating nanostructures was demonstrated that combined nanoimprint lithography and anisotropic wet etching. The resolution of proposed method does not depend on that of an original imprint mold. Atomically sharp V-grooves were formed by anisotropic wet etching using a SiO2 etching mask fabricated by nanoimprint lithography. Atomic scale precision was performed by anisotropic etchant of tetramethylammonium hydroxide solution with adding a small amount of surfactant at room temperature. Using the V-grooves as a template, Al2O3/Al was deposited and etched by angled Ar ion milling after planarization with thick resin. Sub-50-nm metal structures were achieved with 72% size reduction of the initial mold structure.

KW - Anisotropic wet etching

KW - Ar ion milling

KW - Imprint mold

KW - Nanoimprint

KW - V-groove

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JF - Microelectronic Engineering

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