Sub-picosecond exciton spin-relaxation in GaN

Atsushi Tackeuchi, Takamasa Kuroda, Hirotaka Otake, Kazuyoshi Taniguchi, Takako Chinone, Ji Hao Liang, Masataka Kajikawa, Naochika Horio

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Exciton spin relaxations in bulk GaN were directly observed with sub-picosecond's time resolution. The obtained spin relaxation times of A-band free exciton are 0.47 ps - 0.25 ps at 150 K - 225 K. The spin relaxation time of the acceptor bound exciton at 15K is measured to be 1.1 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time of A-band free exciton is found to be proportional to T1.4, where T is the temperature. The fact that the spin relaxation time in GaN is shorter than that in GaAs, in spite of the small spin-orbit splitting, suggests that the spin relaxation is dominated by the defect-assisted Elliot-Yafet process.

    Original languageEnglish
    Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
    Volume6118
    DOIs
    Publication statusPublished - 2006
    EventUltrafast Phenomena in Semiconductors and Nanostructure Materials X - San Jose, CA
    Duration: 2006 Jan 232006 Jan 25

    Other

    OtherUltrafast Phenomena in Semiconductors and Nanostructure Materials X
    CitySan Jose, CA
    Period06/1/2306/1/25

    Fingerprint

    Excitons
    Relaxation time
    excitons
    relaxation time
    Orbits
    Defects
    orbits
    defects
    Temperature

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Condensed Matter Physics

    Cite this

    Tackeuchi, A., Kuroda, T., Otake, H., Taniguchi, K., Chinone, T., Liang, J. H., ... Horio, N. (2006). Sub-picosecond exciton spin-relaxation in GaN. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6118). [611803] https://doi.org/10.1117/12.640263

    Sub-picosecond exciton spin-relaxation in GaN. / Tackeuchi, Atsushi; Kuroda, Takamasa; Otake, Hirotaka; Taniguchi, Kazuyoshi; Chinone, Takako; Liang, Ji Hao; Kajikawa, Masataka; Horio, Naochika.

    Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6118 2006. 611803.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Tackeuchi, A, Kuroda, T, Otake, H, Taniguchi, K, Chinone, T, Liang, JH, Kajikawa, M & Horio, N 2006, Sub-picosecond exciton spin-relaxation in GaN. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 6118, 611803, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, San Jose, CA, 06/1/23. https://doi.org/10.1117/12.640263
    Tackeuchi A, Kuroda T, Otake H, Taniguchi K, Chinone T, Liang JH et al. Sub-picosecond exciton spin-relaxation in GaN. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6118. 2006. 611803 https://doi.org/10.1117/12.640263
    Tackeuchi, Atsushi ; Kuroda, Takamasa ; Otake, Hirotaka ; Taniguchi, Kazuyoshi ; Chinone, Takako ; Liang, Ji Hao ; Kajikawa, Masataka ; Horio, Naochika. / Sub-picosecond exciton spin-relaxation in GaN. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6118 2006.
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    AU - Chinone, Takako

    AU - Liang, Ji Hao

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