Sub-picosecond exciton spin-relaxation in GaN

Atsushi Tackeuchi; Takamasa Kuroda; Hirotaka Otake; Kazuyoshi Taniguchi; Takako Chinone; Ji Hao Liang; Masataka Kajikawa; Naochika Horio

doi:10.1117/12.640263

Sub-picosecond exciton spin-relaxation in GaN

Atsushi Tackeuchi^*, Takamasa Kuroda, Hirotaka Otake, Kazuyoshi Taniguchi, Takako Chinone, Ji Hao Liang, Masataka Kajikawa, Naochika Horio

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Exciton spin relaxations in bulk GaN were directly observed with sub-picosecond's time resolution. The obtained spin relaxation times of A-band free exciton are 0.47 ps - 0.25 ps at 150 K - 225 K. The spin relaxation time of the acceptor bound exciton at 15K is measured to be 1.1 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time of A-band free exciton is found to be proportional to T^1.4, where T is the temperature. The fact that the spin relaxation time in GaN is shorter than that in GaAs, in spite of the small spin-orbit splitting, suggests that the spin relaxation is dominated by the defect-assisted Elliot-Yafet process.

Original language	English
Title of host publication	Ultrafast Phenomena in Semiconductors and Nanostructure Materials X
DOIs	https://doi.org/10.1117/12.640263
Publication status	Published - 2006 May 23
Event	Ultrafast Phenomena in Semiconductors and Nanostructure Materials X - San Jose, CA, United States Duration: 2006 Jan 23 → 2006 Jan 25

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6118
ISSN (Print)	0277-786X

Conference

Conference	Ultrafast Phenomena in Semiconductors and Nanostructure Materials X
Country/Territory	United States
City	San Jose, CA
Period	06/1/23 → 06/1/25

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.640263

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Tackeuchi, A, Kuroda, T, Otake, H, Taniguchi, K, Chinone, T, Liang, JH, Kajikawa, M & Horio, N 2006, Sub-picosecond exciton spin-relaxation in GaN. in Ultrafast Phenomena in Semiconductors and Nanostructure Materials X., 611803, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, San Jose, CA, United States, 06/1/23. https://doi.org/10.1117/12.640263

@inproceedings{f56650361db444fba7950a1b538afda7,

title = "Sub-picosecond exciton spin-relaxation in GaN",

abstract = "Exciton spin relaxations in bulk GaN were directly observed with sub-picosecond's time resolution. The obtained spin relaxation times of A-band free exciton are 0.47 ps - 0.25 ps at 150 K - 225 K. The spin relaxation time of the acceptor bound exciton at 15K is measured to be 1.1 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time of A-band free exciton is found to be proportional to T1.4, where T is the temperature. The fact that the spin relaxation time in GaN is shorter than that in GaAs, in spite of the small spin-orbit splitting, suggests that the spin relaxation is dominated by the defect-assisted Elliot-Yafet process.",

author = "Atsushi Tackeuchi and Takamasa Kuroda and Hirotaka Otake and Kazuyoshi Taniguchi and Takako Chinone and Liang, {Ji Hao} and Masataka Kajikawa and Naochika Horio",

year = "2006",

month = may,

day = "23",

doi = "10.1117/12.640263",

language = "English",

isbn = "0819461601",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Ultrafast Phenomena in Semiconductors and Nanostructure Materials X",

note = "Ultrafast Phenomena in Semiconductors and Nanostructure Materials X ; Conference date: 23-01-2006 Through 25-01-2006",

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TY - GEN

T1 - Sub-picosecond exciton spin-relaxation in GaN

AU - Tackeuchi, Atsushi

AU - Kuroda, Takamasa

AU - Otake, Hirotaka

AU - Taniguchi, Kazuyoshi

AU - Chinone, Takako

AU - Liang, Ji Hao

AU - Kajikawa, Masataka

AU - Horio, Naochika

PY - 2006/5/23

Y1 - 2006/5/23

N2 - Exciton spin relaxations in bulk GaN were directly observed with sub-picosecond's time resolution. The obtained spin relaxation times of A-band free exciton are 0.47 ps - 0.25 ps at 150 K - 225 K. The spin relaxation time of the acceptor bound exciton at 15K is measured to be 1.1 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time of A-band free exciton is found to be proportional to T1.4, where T is the temperature. The fact that the spin relaxation time in GaN is shorter than that in GaAs, in spite of the small spin-orbit splitting, suggests that the spin relaxation is dominated by the defect-assisted Elliot-Yafet process.

AB - Exciton spin relaxations in bulk GaN were directly observed with sub-picosecond's time resolution. The obtained spin relaxation times of A-band free exciton are 0.47 ps - 0.25 ps at 150 K - 225 K. The spin relaxation time of the acceptor bound exciton at 15K is measured to be 1.1 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time of A-band free exciton is found to be proportional to T1.4, where T is the temperature. The fact that the spin relaxation time in GaN is shorter than that in GaAs, in spite of the small spin-orbit splitting, suggests that the spin relaxation is dominated by the defect-assisted Elliot-Yafet process.

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DO - 10.1117/12.640263

M3 - Conference contribution

AN - SCOPUS:33646712167

SN - 0819461601

SN - 9780819461605

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Ultrafast Phenomena in Semiconductors and Nanostructure Materials X

T2 - Ultrafast Phenomena in Semiconductors and Nanostructure Materials X

Y2 - 23 January 2006 through 25 January 2006

ER -

Sub-picosecond exciton spin-relaxation in GaN

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