Sub-picosecond Spin relaxation in GaN

T. Kuroda, T. Yabushita, T. Kosuge, Atsushi Tackeuchi, K. Taniguchi, T. Chinone, N. Horio

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The spin relaxation process of A-band exciton in GaN is observed for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are measured to be 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τs, is found to be proportional to T -1.4, where T is the temperature.

    Original languageEnglish
    Title of host publicationAIP Conference Proceedings
    Pages299-300
    Number of pages2
    Volume772
    DOIs
    Publication statusPublished - 2005 Jun 30
    EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ
    Duration: 2004 Jul 262004 Jul 30

    Other

    OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
    CityFlagstaff, AZ
    Period04/7/2604/7/30

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    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Kuroda, T., Yabushita, T., Kosuge, T., Tackeuchi, A., Taniguchi, K., Chinone, T., & Horio, N. (2005). Sub-picosecond Spin relaxation in GaN. In AIP Conference Proceedings (Vol. 772, pp. 299-300) https://doi.org/10.1063/1.1994109