Sub-picosecond Spin relaxation in GaN

T. Kuroda, T. Yabushita, T. Kosuge, Atsushi Tackeuchi, K. Taniguchi, T. Chinone, N. Horio

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The spin relaxation process of A-band exciton in GaN is observed for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are measured to be 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τs, is found to be proportional to T -1.4, where T is the temperature.

    Original languageEnglish
    Title of host publicationAIP Conference Proceedings
    Pages299-300
    Number of pages2
    Volume772
    DOIs
    Publication statusPublished - 2005 Jun 30
    EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ
    Duration: 2004 Jul 262004 Jul 30

    Other

    OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
    CityFlagstaff, AZ
    Period04/7/2604/7/30

    Fingerprint

    relaxation time
    excitons
    pumps
    reflectance
    probes
    temperature

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Kuroda, T., Yabushita, T., Kosuge, T., Tackeuchi, A., Taniguchi, K., Chinone, T., & Horio, N. (2005). Sub-picosecond Spin relaxation in GaN. In AIP Conference Proceedings (Vol. 772, pp. 299-300) https://doi.org/10.1063/1.1994109

    Sub-picosecond Spin relaxation in GaN. / Kuroda, T.; Yabushita, T.; Kosuge, T.; Tackeuchi, Atsushi; Taniguchi, K.; Chinone, T.; Horio, N.

    AIP Conference Proceedings. Vol. 772 2005. p. 299-300.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Kuroda, T, Yabushita, T, Kosuge, T, Tackeuchi, A, Taniguchi, K, Chinone, T & Horio, N 2005, Sub-picosecond Spin relaxation in GaN. in AIP Conference Proceedings. vol. 772, pp. 299-300, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, 04/7/26. https://doi.org/10.1063/1.1994109
    Kuroda T, Yabushita T, Kosuge T, Tackeuchi A, Taniguchi K, Chinone T et al. Sub-picosecond Spin relaxation in GaN. In AIP Conference Proceedings. Vol. 772. 2005. p. 299-300 https://doi.org/10.1063/1.1994109
    Kuroda, T. ; Yabushita, T. ; Kosuge, T. ; Tackeuchi, Atsushi ; Taniguchi, K. ; Chinone, T. ; Horio, N. / Sub-picosecond Spin relaxation in GaN. AIP Conference Proceedings. Vol. 772 2005. pp. 299-300
    @inproceedings{570cca8a63594d75b4bad1681469ca62,
    title = "Sub-picosecond Spin relaxation in GaN",
    abstract = "The spin relaxation process of A-band exciton in GaN is observed for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are measured to be 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τs, is found to be proportional to T -1.4, where T is the temperature.",
    author = "T. Kuroda and T. Yabushita and T. Kosuge and Atsushi Tackeuchi and K. Taniguchi and T. Chinone and N. Horio",
    year = "2005",
    month = "6",
    day = "30",
    doi = "10.1063/1.1994109",
    language = "English",
    isbn = "0735402574",
    volume = "772",
    pages = "299--300",
    booktitle = "AIP Conference Proceedings",

    }

    TY - GEN

    T1 - Sub-picosecond Spin relaxation in GaN

    AU - Kuroda, T.

    AU - Yabushita, T.

    AU - Kosuge, T.

    AU - Tackeuchi, Atsushi

    AU - Taniguchi, K.

    AU - Chinone, T.

    AU - Horio, N.

    PY - 2005/6/30

    Y1 - 2005/6/30

    N2 - The spin relaxation process of A-band exciton in GaN is observed for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are measured to be 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τs, is found to be proportional to T -1.4, where T is the temperature.

    AB - The spin relaxation process of A-band exciton in GaN is observed for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are measured to be 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τs, is found to be proportional to T -1.4, where T is the temperature.

    UR - http://www.scopus.com/inward/record.url?scp=33749521404&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=33749521404&partnerID=8YFLogxK

    U2 - 10.1063/1.1994109

    DO - 10.1063/1.1994109

    M3 - Conference contribution

    AN - SCOPUS:33749521404

    SN - 0735402574

    SN - 9780735402577

    VL - 772

    SP - 299

    EP - 300

    BT - AIP Conference Proceedings

    ER -