Sub-picosecond Spin relaxation in GaN

T. Kuroda, T. Yabushita, T. Kosuge, A. Tackeuchi, K. Taniguchi, T. Chinone, N. Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The spin relaxation process of A-band exciton in GaN is observed for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are measured to be 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τs, is found to be proportional to T -1.4, where T is the temperature.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages299-300
Number of pages2
DOIs
Publication statusPublished - 2005 Jun 30
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 2004 Jul 262004 Jul 30

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period04/7/2604/7/30

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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