Subband mobility of quasi-two-dimensional electrons in Si atomic layer doped GaAs

Syoji Yamada, Toshiki Makimoto

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

Subband mobility and conductivity of quasi-two-dimensional electrons in Si atomic layer doped GaAs are estimated for the first time. The oscillations for different subbands in low-temperature magnetoresistance are separated from each other by using the reverse Fourier transform technique. The mobility for each subband is then determined by fitting the field dependence of the amplitudes with conventional theory. A large subband mobility difference up to 20:1 is found. This is mainly due to strong screening. Furthermore, a partial conductivity for each subband is calculated and the importance of the shallower subbands in total current transport is clarified.

Original languageEnglish
Pages (from-to)1022-1024
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number10
DOIs
Publication statusPublished - 1990
Externally publishedYes

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conductivity
electrons
screening
oscillations

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Subband mobility of quasi-two-dimensional electrons in Si atomic layer doped GaAs. / Yamada, Syoji; Makimoto, Toshiki.

In: Applied Physics Letters, Vol. 57, No. 10, 1990, p. 1022-1024.

Research output: Contribution to journalArticle

@article{3c804a57df4041d49b95c61d7bdd4763,
title = "Subband mobility of quasi-two-dimensional electrons in Si atomic layer doped GaAs",
abstract = "Subband mobility and conductivity of quasi-two-dimensional electrons in Si atomic layer doped GaAs are estimated for the first time. The oscillations for different subbands in low-temperature magnetoresistance are separated from each other by using the reverse Fourier transform technique. The mobility for each subband is then determined by fitting the field dependence of the amplitudes with conventional theory. A large subband mobility difference up to 20:1 is found. This is mainly due to strong screening. Furthermore, a partial conductivity for each subband is calculated and the importance of the shallower subbands in total current transport is clarified.",
author = "Syoji Yamada and Toshiki Makimoto",
year = "1990",
doi = "10.1063/1.103553",
language = "English",
volume = "57",
pages = "1022--1024",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - Subband mobility of quasi-two-dimensional electrons in Si atomic layer doped GaAs

AU - Yamada, Syoji

AU - Makimoto, Toshiki

PY - 1990

Y1 - 1990

N2 - Subband mobility and conductivity of quasi-two-dimensional electrons in Si atomic layer doped GaAs are estimated for the first time. The oscillations for different subbands in low-temperature magnetoresistance are separated from each other by using the reverse Fourier transform technique. The mobility for each subband is then determined by fitting the field dependence of the amplitudes with conventional theory. A large subband mobility difference up to 20:1 is found. This is mainly due to strong screening. Furthermore, a partial conductivity for each subband is calculated and the importance of the shallower subbands in total current transport is clarified.

AB - Subband mobility and conductivity of quasi-two-dimensional electrons in Si atomic layer doped GaAs are estimated for the first time. The oscillations for different subbands in low-temperature magnetoresistance are separated from each other by using the reverse Fourier transform technique. The mobility for each subband is then determined by fitting the field dependence of the amplitudes with conventional theory. A large subband mobility difference up to 20:1 is found. This is mainly due to strong screening. Furthermore, a partial conductivity for each subband is calculated and the importance of the shallower subbands in total current transport is clarified.

UR - http://www.scopus.com/inward/record.url?scp=0042247427&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042247427&partnerID=8YFLogxK

U2 - 10.1063/1.103553

DO - 10.1063/1.103553

M3 - Article

VL - 57

SP - 1022

EP - 1024

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

ER -