Subband mobility of quasi-two-dimensional electrons in Si atomic layer doped GaAs

Syoji Yamada, Toshiki Makimoto

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

Subband mobility and conductivity of quasi-two-dimensional electrons in Si atomic layer doped GaAs are estimated for the first time. The oscillations for different subbands in low-temperature magnetoresistance are separated from each other by using the reverse Fourier transform technique. The mobility for each subband is then determined by fitting the field dependence of the amplitudes with conventional theory. A large subband mobility difference up to 20:1 is found. This is mainly due to strong screening. Furthermore, a partial conductivity for each subband is calculated and the importance of the shallower subbands in total current transport is clarified.

Original languageEnglish
Pages (from-to)1022-1024
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number10
DOIs
Publication statusPublished - 1990 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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