Subband structure of two-dimensional electrons at double silicon-doped atomic layers in GaAs

G. Kido, S. Yamada, Toshiki Makimoto

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Longitudinal and transverse magnetoresistance experiments were carried out on GaAs with two impurity-doped planes in steady high magnetic fields up to 30 T. A large oscillation was observed in the field range higher than 10 T. The double Si-doped planes behave as a single well even for 15 nm separation of the atomic planes.

Original languageEnglish
Pages (from-to)433-436
Number of pages4
JournalPhysica B: Physics of Condensed Matter
Volume177
Issue number1-4
DOIs
Publication statusPublished - 1992 Mar 2
Externally publishedYes

Fingerprint

Silicon
Magnetoresistance
Impurities
Magnetic fields
impurities
oscillations
Electrons
silicon
magnetic fields
electrons
Experiments
gallium arsenide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Subband structure of two-dimensional electrons at double silicon-doped atomic layers in GaAs. / Kido, G.; Yamada, S.; Makimoto, Toshiki.

In: Physica B: Physics of Condensed Matter, Vol. 177, No. 1-4, 02.03.1992, p. 433-436.

Research output: Contribution to journalArticle

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