Longitudinal and transverse magnetoresistance experiments were carried out on GaAs with two impurity-doped planes in steady high magnetic fields up to 30 T. A large oscillation was observed in the field range higher than 10 T. The double Si-doped planes behave as a single well even for 15 nm separation of the atomic planes.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering