Resist patterns as small as 0. 1 mu m were fabricated by the irradiation of a gallium focused ion beam followed by an oxygen plasma development. The measured width of the patterns fabricated by this technique was in good agreement with the designed linewidth in the subhalf-micrometer region. n-channel Si MOSFETs with 0. 3-0. 8- mu m gates were fabricated by the use of this technique. These results, accompanied by the fabricated and demonstrated performance of a ring oscillator, showed the feasibility of focused-ion-beam lithography.
|Number of pages||11|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1987 Feb|
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)