SUBMICROMETER-GATE MOSFET'S BY THE USE OF FOCUSED-ION-BEAM EXPOSURE AND A DRY DEVELOPMENT TECHNIQUE.

Hiroaki Morimoto, Katsuhiro Tsukamoto, Hirofumi Shinohara, Masahide Inuishi, Tadao Kato

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Resist patterns as small as 0. 1 mu m were fabricated by the irradiation of a gallium focused ion beam followed by an oxygen plasma development. The measured width of the patterns fabricated by this technique was in good agreement with the designed linewidth in the subhalf-micrometer region. n-channel Si MOSFETs with 0. 3-0. 8- mu m gates were fabricated by the use of this technique. These results, accompanied by the fabricated and demonstrated performance of a ring oscillator, showed the feasibility of focused-ion-beam lithography.

Original languageEnglish
Pages (from-to)230-240
Number of pages11
JournalIEEE Transactions on Electron Devices
VolumeED-34
Issue number2
Publication statusPublished - 1987 Feb
Externally publishedYes

Fingerprint

GARP Atlantic Tropical Experiment
Focused ion beams
field effect transistors
Ion beam lithography
ion beams
Gallium
oxygen plasma
Linewidth
gallium
micrometers
lithography
oscillators
Irradiation
Oxygen
Plasmas
irradiation
rings

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

SUBMICROMETER-GATE MOSFET'S BY THE USE OF FOCUSED-ION-BEAM EXPOSURE AND A DRY DEVELOPMENT TECHNIQUE. / Morimoto, Hiroaki; Tsukamoto, Katsuhiro; Shinohara, Hirofumi; Inuishi, Masahide; Kato, Tadao.

In: IEEE Transactions on Electron Devices, Vol. ED-34, No. 2, 02.1987, p. 230-240.

Research output: Contribution to journalArticle

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