Submicrometer-Gate MOSFET's by the Use of Focused-Ion-Beam Exposure and a Dry Development Technique

Hiroaki Morimoto, Katsuhiro Tsukamoto, Hirofumi Shinohara, Masahide Inuishi, Tadao Kato

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Resist patterns as small as 0.1 μm, were fabricated by the irradiation of a gallium focused ion beam followed by an oxygen plasma development. The measured width of the patterns fabricated by this technique was in good agreement with the designed linewidth in the sub-half-micrometer region, n-channel Si MOSFET's with 0.3-0.8-(μm, gates were fabricated by the use of this technique. These results, accompanied by the fabricated and demonstrated performance of a ring oscillator, showed the feasibility of focused-ion-beam lithography.

Original languageEnglish
Pages (from-to)230-234
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume34
Issue number2
DOIs
Publication statusPublished - 1987 Feb

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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