SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT.

T. Kato, H. Morimoto, K. Tsukamoto, Hirofumi Shinohara, Masahide Inuishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ultrafine lithography for dimensions less than 0. 5 mu m is one of the most promising applications of focused ion beams (FIB) because ion beams hardly suffer from a proximity effect. Submicron patterns are delineated in the resist by irradiation of gallium FIB followed by a dry development. The patterning characteristics and their application to N-MOS FETs with 0. 3-0. 8 mu m gates are discussed.

Original languageEnglish
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
PublisherBusiness Cent for Academic Soc Japan
Pages72-73
Number of pages2
ISBN (Print)4930813093
Publication statusPublished - 1985
Externally publishedYes

Fingerprint

Focused ion beams
Lithography
Gallium
Field effect transistors
Ion beams
Irradiation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kato, T., Morimoto, H., Tsukamoto, K., Shinohara, H., & Inuishi, M. (1985). SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT. In Digest of Technical Papers - Symposium on VLSI Technology (pp. 72-73). Business Cent for Academic Soc Japan.

SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT. / Kato, T.; Morimoto, H.; Tsukamoto, K.; Shinohara, Hirofumi; Inuishi, Masahide.

Digest of Technical Papers - Symposium on VLSI Technology. Business Cent for Academic Soc Japan, 1985. p. 72-73.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kato, T, Morimoto, H, Tsukamoto, K, Shinohara, H & Inuishi, M 1985, SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT. in Digest of Technical Papers - Symposium on VLSI Technology. Business Cent for Academic Soc Japan, pp. 72-73.
Kato T, Morimoto H, Tsukamoto K, Shinohara H, Inuishi M. SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT. In Digest of Technical Papers - Symposium on VLSI Technology. Business Cent for Academic Soc Japan. 1985. p. 72-73
Kato, T. ; Morimoto, H. ; Tsukamoto, K. ; Shinohara, Hirofumi ; Inuishi, Masahide. / SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT. Digest of Technical Papers - Symposium on VLSI Technology. Business Cent for Academic Soc Japan, 1985. pp. 72-73
@inproceedings{404fa61f6f3049ef90645285640d805a,
title = "SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT.",
abstract = "Ultrafine lithography for dimensions less than 0. 5 mu m is one of the most promising applications of focused ion beams (FIB) because ion beams hardly suffer from a proximity effect. Submicron patterns are delineated in the resist by irradiation of gallium FIB followed by a dry development. The patterning characteristics and their application to N-MOS FETs with 0. 3-0. 8 mu m gates are discussed.",
author = "T. Kato and H. Morimoto and K. Tsukamoto and Hirofumi Shinohara and Masahide Inuishi",
year = "1985",
language = "English",
isbn = "4930813093",
pages = "72--73",
booktitle = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Business Cent for Academic Soc Japan",

}

TY - GEN

T1 - SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT.

AU - Kato, T.

AU - Morimoto, H.

AU - Tsukamoto, K.

AU - Shinohara, Hirofumi

AU - Inuishi, Masahide

PY - 1985

Y1 - 1985

N2 - Ultrafine lithography for dimensions less than 0. 5 mu m is one of the most promising applications of focused ion beams (FIB) because ion beams hardly suffer from a proximity effect. Submicron patterns are delineated in the resist by irradiation of gallium FIB followed by a dry development. The patterning characteristics and their application to N-MOS FETs with 0. 3-0. 8 mu m gates are discussed.

AB - Ultrafine lithography for dimensions less than 0. 5 mu m is one of the most promising applications of focused ion beams (FIB) because ion beams hardly suffer from a proximity effect. Submicron patterns are delineated in the resist by irradiation of gallium FIB followed by a dry development. The patterning characteristics and their application to N-MOS FETs with 0. 3-0. 8 mu m gates are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0022285998&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022285998&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0022285998

SN - 4930813093

SP - 72

EP - 73

BT - Digest of Technical Papers - Symposium on VLSI Technology

PB - Business Cent for Academic Soc Japan

ER -