Ultrafine lithography for dimensions less than 0. 5 mu m is one of the most promising applications of focused ion beams (FIB) because ion beams hardly suffer from a proximity effect. Submicron patterns are delineated in the resist by irradiation of gallium FIB followed by a dry development. The patterning characteristics and their application to N-MOS FETs with 0. 3-0. 8 mu m gates are discussed.
|Title of host publication||Digest of Technical Papers - Symposium on VLSI Technology|
|Publisher||Business Cent for Academic Soc Japan|
|Number of pages||2|
|Publication status||Published - 1985 Dec 1|
|Name||Digest of Technical Papers - Symposium on VLSI Technology|
ASJC Scopus subject areas
- Electrical and Electronic Engineering