SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT.

T. Kato, H. Morimoto, K. Tsukamoto, H. Shinohara, M. Inuishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ultrafine lithography for dimensions less than 0. 5 mu m is one of the most promising applications of focused ion beams (FIB) because ion beams hardly suffer from a proximity effect. Submicron patterns are delineated in the resist by irradiation of gallium FIB followed by a dry development. The patterning characteristics and their application to N-MOS FETs with 0. 3-0. 8 mu m gates are discussed.

Original languageEnglish
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
PublisherBusiness Cent for Academic Soc Japan
Pages72-73
Number of pages2
ISBN (Print)4930813093
Publication statusPublished - 1985 Dec 1
Externally publishedYes

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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