SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT.

T. Kato; H. Morimoto; K. Tsukamoto; H. Shinohara; M. Inuishi

SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT.

T. Kato^*, H. Morimoto, K. Tsukamoto, H. Shinohara, M. Inuishi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Ultrafine lithography for dimensions less than 0. 5 mu m is one of the most promising applications of focused ion beams (FIB) because ion beams hardly suffer from a proximity effect. Submicron patterns are delineated in the resist by irradiation of gallium FIB followed by a dry development. The patterning characteristics and their application to N-MOS FETs with 0. 3-0. 8 mu m gates are discussed.

Original language	English
Title of host publication	Digest of Technical Papers - Symposium on VLSI Technology
Publisher	Business Cent for Academic Soc Japan
Pages	72-73
Number of pages	2
ISBN (Print)	4930813093
Publication status	Published - 1985 Dec 1
Externally published	Yes

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT. / Kato, T.; Morimoto, H.; Tsukamoto, K. et al.

Digest of Technical Papers - Symposium on VLSI Technology. Business Cent for Academic Soc Japan, 1985. p. 72-73 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

@inproceedings{404fa61f6f3049ef90645285640d805a,

title = "SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT.",

abstract = "Ultrafine lithography for dimensions less than 0. 5 mu m is one of the most promising applications of focused ion beams (FIB) because ion beams hardly suffer from a proximity effect. Submicron patterns are delineated in the resist by irradiation of gallium FIB followed by a dry development. The patterning characteristics and their application to N-MOS FETs with 0. 3-0. 8 mu m gates are discussed.",

author = "T. Kato and H. Morimoto and K. Tsukamoto and H. Shinohara and M. Inuishi",

year = "1985",

month = dec,

day = "1",

language = "English",

isbn = "4930813093",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Business Cent for Academic Soc Japan",

pages = "72--73",

booktitle = "Digest of Technical Papers - Symposium on VLSI Technology",

}

TY - GEN

T1 - SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT.

AU - Kato, T.

AU - Morimoto, H.

AU - Tsukamoto, K.

AU - Shinohara, H.

AU - Inuishi, M.

PY - 1985/12/1

Y1 - 1985/12/1

N2 - Ultrafine lithography for dimensions less than 0. 5 mu m is one of the most promising applications of focused ion beams (FIB) because ion beams hardly suffer from a proximity effect. Submicron patterns are delineated in the resist by irradiation of gallium FIB followed by a dry development. The patterning characteristics and their application to N-MOS FETs with 0. 3-0. 8 mu m gates are discussed.

AB - Ultrafine lithography for dimensions less than 0. 5 mu m is one of the most promising applications of focused ion beams (FIB) because ion beams hardly suffer from a proximity effect. Submicron patterns are delineated in the resist by irradiation of gallium FIB followed by a dry development. The patterning characteristics and their application to N-MOS FETs with 0. 3-0. 8 mu m gates are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0022285998&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022285998&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0022285998

SN - 4930813093

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 72

EP - 73

BT - Digest of Technical Papers - Symposium on VLSI Technology

PB - Business Cent for Academic Soc Japan

ER -

SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT.

Abstract

Publication series

ASJC Scopus subject areas

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