Subplcosecond exciton spin relaxation in GaN

T. Kuroda, T. Yabushita, T. Kosuge, Atsushi Tackeuchi, K. Taniguchi, T. Chinone, N. Horio

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    Abstract

    The spin-relaxation process of A-band exciton in GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The spin-relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin-relaxation time τs is found to be proportional to T-14, where T is the temperature.

    Original languageEnglish
    Pages (from-to)3116-3118
    Number of pages3
    JournalApplied Physics Letters
    Volume85
    Issue number15
    DOIs
    Publication statusPublished - 2004 Oct 11

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    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Kuroda, T., Yabushita, T., Kosuge, T., Tackeuchi, A., Taniguchi, K., Chinone, T., & Horio, N. (2004). Subplcosecond exciton spin relaxation in GaN. Applied Physics Letters, 85(15), 3116-3118. https://doi.org/10.1063/1.1806284