Subplcosecond exciton spin relaxation in GaN

T. Kuroda; T. Yabushita; T. Kosuge; A. Tackeuchi; K. Taniguchi; T. Chinone; N. Horio

doi:10.1063/1.1806284

Subplcosecond exciton spin relaxation in GaN

T. Kuroda, T. Yabushita, T. Kosuge, A. Tackeuchi, K. Taniguchi, T. Chinone, N. Horio

School of Advanced Science and Engineering

Research output: Contribution to journal › Article

37 Citations (Scopus)

Abstract

The spin-relaxation process of A-band exciton in GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The spin-relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin-relaxation time τ_s is found to be proportional to T_-14, where T is the temperature.

Original language	English
Pages (from-to)	3116-3118
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	15
DOIs	https://doi.org/10.1063/1.1806284
Publication status	Published - 2004 Oct 11

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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AU - Kuroda, T.

AU - Yabushita, T.

AU - Kosuge, T.

AU - Tackeuchi, A.

AU - Taniguchi, K.

AU - Chinone, T.

AU - Horio, N.

PY - 2004/10/11

Y1 - 2004/10/11

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AB - The spin-relaxation process of A-band exciton in GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The spin-relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin-relaxation time τs is found to be proportional to T-14, where T is the temperature.

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