Subplcosecond exciton spin relaxation in GaN

T. Kuroda; T. Yabushita; T. Kosuge; Atsushi Tackeuchi; K. Taniguchi; T. Chinone; N. Horio

doi:10.1063/1.1806284

Subplcosecond exciton spin relaxation in GaN

T. Kuroda, T. Yabushita, T. Kosuge, Atsushi Tackeuchi, K. Taniguchi, T. Chinone, N. Horio

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Abstract

The spin-relaxation process of A-band exciton in GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The spin-relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin-relaxation time τ_s is found to be proportional to T_-14, where T is the temperature.

Original language	English
Pages (from-to)	3116-3118
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	15
DOIs	https://doi.org/10.1063/1.1806284
Publication status	Published - 2004 Oct 11

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Kuroda, T., Yabushita, T., Kosuge, T., Tackeuchi, A., Taniguchi, K., Chinone, T., & Horio, N. (2004). Subplcosecond exciton spin relaxation in GaN. Applied Physics Letters, 85(15), 3116-3118. https://doi.org/10.1063/1.1806284

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AU - Kuroda, T.

AU - Yabushita, T.

AU - Kosuge, T.

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AU - Taniguchi, K.

AU - Chinone, T.

AU - Horio, N.

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10.1063/1.1806284