Subplcosecond exciton spin relaxation in GaN

T. Kuroda, T. Yabushita, T. Kosuge, Atsushi Tackeuchi, K. Taniguchi, T. Chinone, N. Horio

    Research output: Contribution to journalArticle

    37 Citations (Scopus)

    Abstract

    The spin-relaxation process of A-band exciton in GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The spin-relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin-relaxation time τs is found to be proportional to T-14, where T is the temperature.

    Original languageEnglish
    Pages (from-to)3116-3118
    Number of pages3
    JournalApplied Physics Letters
    Volume85
    Issue number15
    DOIs
    Publication statusPublished - 2004 Oct 11

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    excitons
    relaxation time
    pumps
    reflectance
    probes
    temperature

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Kuroda, T., Yabushita, T., Kosuge, T., Tackeuchi, A., Taniguchi, K., Chinone, T., & Horio, N. (2004). Subplcosecond exciton spin relaxation in GaN. Applied Physics Letters, 85(15), 3116-3118. https://doi.org/10.1063/1.1806284

    Subplcosecond exciton spin relaxation in GaN. / Kuroda, T.; Yabushita, T.; Kosuge, T.; Tackeuchi, Atsushi; Taniguchi, K.; Chinone, T.; Horio, N.

    In: Applied Physics Letters, Vol. 85, No. 15, 11.10.2004, p. 3116-3118.

    Research output: Contribution to journalArticle

    Kuroda, T, Yabushita, T, Kosuge, T, Tackeuchi, A, Taniguchi, K, Chinone, T & Horio, N 2004, 'Subplcosecond exciton spin relaxation in GaN', Applied Physics Letters, vol. 85, no. 15, pp. 3116-3118. https://doi.org/10.1063/1.1806284
    Kuroda T, Yabushita T, Kosuge T, Tackeuchi A, Taniguchi K, Chinone T et al. Subplcosecond exciton spin relaxation in GaN. Applied Physics Letters. 2004 Oct 11;85(15):3116-3118. https://doi.org/10.1063/1.1806284
    Kuroda, T. ; Yabushita, T. ; Kosuge, T. ; Tackeuchi, Atsushi ; Taniguchi, K. ; Chinone, T. ; Horio, N. / Subplcosecond exciton spin relaxation in GaN. In: Applied Physics Letters. 2004 ; Vol. 85, No. 15. pp. 3116-3118.
    @article{608f1f502dd14b4b9ad0664fb86e3597,
    title = "Subplcosecond exciton spin relaxation in GaN",
    abstract = "The spin-relaxation process of A-band exciton in GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The spin-relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin-relaxation time τs is found to be proportional to T-14, where T is the temperature.",
    author = "T. Kuroda and T. Yabushita and T. Kosuge and Atsushi Tackeuchi and K. Taniguchi and T. Chinone and N. Horio",
    year = "2004",
    month = "10",
    day = "11",
    doi = "10.1063/1.1806284",
    language = "English",
    volume = "85",
    pages = "3116--3118",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",
    number = "15",

    }

    TY - JOUR

    T1 - Subplcosecond exciton spin relaxation in GaN

    AU - Kuroda, T.

    AU - Yabushita, T.

    AU - Kosuge, T.

    AU - Tackeuchi, Atsushi

    AU - Taniguchi, K.

    AU - Chinone, T.

    AU - Horio, N.

    PY - 2004/10/11

    Y1 - 2004/10/11

    N2 - The spin-relaxation process of A-band exciton in GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The spin-relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin-relaxation time τs is found to be proportional to T-14, where T is the temperature.

    AB - The spin-relaxation process of A-band exciton in GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The spin-relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin-relaxation time τs is found to be proportional to T-14, where T is the temperature.

    UR - http://www.scopus.com/inward/record.url?scp=8644245966&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=8644245966&partnerID=8YFLogxK

    U2 - 10.1063/1.1806284

    DO - 10.1063/1.1806284

    M3 - Article

    VL - 85

    SP - 3116

    EP - 3118

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 15

    ER -