@article{608f1f502dd14b4b9ad0664fb86e3597,
title = "Subplcosecond exciton spin relaxation in GaN",
abstract = "The spin-relaxation process of A-band exciton in GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The spin-relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin-relaxation time τs is found to be proportional to T-14, where T is the temperature.",
author = "T. Kuroda and T. Yabushita and T. Kosuge and A. Tackeuchi and K. Taniguchi and T. Chinone and N. Horio",
note = "Funding Information: This work was supported in part by a grant-in-aid for Scientific Research on the Priority Area “Semiconductor Nanospintronics” (No. 14076217), form the MEXT. The work was partly supported by a Grant-in-Aid for The 21st Century COE Program (Physics of Self-organization Systems) at Waseda University form the MEXT. This work was supported in part by The High-Tech Research Center Project from the MEXT. T. Kuroda acknowledges the support of a Waseda University Grant for Special Research Projects (2003A-085).",
year = "2004",
month = oct,
day = "11",
doi = "10.1063/1.1806284",
language = "English",
volume = "85",
pages = "3116--3118",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",
}