Subquarter-micrometer dual gate complementary metal oxide semiconductor field effect transistor with ultrathin gate oxide of 2 nm

Masahiro Shimizu, Takashi Kuroi, Masahide Inuishi, Hideaki Arima, Haruhiko Abe, Chihiro Hamaguchi

Research output: Contribution to journalArticle

Abstract

The high performance of 0.25 μm dual gate complementary metal oxide semiconductor with an ultrathin gate oxide of 2 nm is demonstrated for low-voltage logic applications. Boron penetration can be effectively suppressed by the nitrogen implantation technique, even if the gate oxide film is reduced to 2 nm. It is confirmed that N-channel and P-channel metal oxide semiconductor field effect transistors (MOSFETs) with high current drivability can be realized by the thin gate oxide, although the transconductance is not inversely proportional to the gate oxide thickness due to the increase in the effect of the inversion capacitance and the gate depletion. The inverter delay time with the aluminum interconnect load is markedly improved by the highly drivable MOSFETs with thin gate oxide, especially at low-voltage operation. Furthermore, hot carrier degradation of N-channel MOSFETs can be suppressed by reducing the gate oxide thickness. However, it was found that the hot carrier degradation of P-channel MOSFETs is enhanced in the thin gate oxide region under channel hot hole injection.

Original languageEnglish
Pages (from-to)5926-5931
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number11
Publication statusPublished - 1998 Nov
Externally publishedYes

Fingerprint

MOSFET devices
micrometers
CMOS
field effect transistors
Oxides
oxides
metal oxide semiconductors
Hot carriers
Degradation
low voltage
Transconductance
Electric potential
degradation
Oxide films
Boron
Time delay
Capacitance
transconductance
Nitrogen
Aluminum

Keywords

  • Dual gate CMOS
  • Gate oxide
  • Hot carrier reliability
  • MOSFET
  • Tunneling current

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

Subquarter-micrometer dual gate complementary metal oxide semiconductor field effect transistor with ultrathin gate oxide of 2 nm. / Shimizu, Masahiro; Kuroi, Takashi; Inuishi, Masahide; Arima, Hideaki; Abe, Haruhiko; Hamaguchi, Chihiro.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 37, No. 11, 11.1998, p. 5926-5931.

Research output: Contribution to journalArticle

@article{93ec8a349393459997805deb78b82d21,
title = "Subquarter-micrometer dual gate complementary metal oxide semiconductor field effect transistor with ultrathin gate oxide of 2 nm",
abstract = "The high performance of 0.25 μm dual gate complementary metal oxide semiconductor with an ultrathin gate oxide of 2 nm is demonstrated for low-voltage logic applications. Boron penetration can be effectively suppressed by the nitrogen implantation technique, even if the gate oxide film is reduced to 2 nm. It is confirmed that N-channel and P-channel metal oxide semiconductor field effect transistors (MOSFETs) with high current drivability can be realized by the thin gate oxide, although the transconductance is not inversely proportional to the gate oxide thickness due to the increase in the effect of the inversion capacitance and the gate depletion. The inverter delay time with the aluminum interconnect load is markedly improved by the highly drivable MOSFETs with thin gate oxide, especially at low-voltage operation. Furthermore, hot carrier degradation of N-channel MOSFETs can be suppressed by reducing the gate oxide thickness. However, it was found that the hot carrier degradation of P-channel MOSFETs is enhanced in the thin gate oxide region under channel hot hole injection.",
keywords = "Dual gate CMOS, Gate oxide, Hot carrier reliability, MOSFET, Tunneling current",
author = "Masahiro Shimizu and Takashi Kuroi and Masahide Inuishi and Hideaki Arima and Haruhiko Abe and Chihiro Hamaguchi",
year = "1998",
month = "11",
language = "English",
volume = "37",
pages = "5926--5931",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "11",

}

TY - JOUR

T1 - Subquarter-micrometer dual gate complementary metal oxide semiconductor field effect transistor with ultrathin gate oxide of 2 nm

AU - Shimizu, Masahiro

AU - Kuroi, Takashi

AU - Inuishi, Masahide

AU - Arima, Hideaki

AU - Abe, Haruhiko

AU - Hamaguchi, Chihiro

PY - 1998/11

Y1 - 1998/11

N2 - The high performance of 0.25 μm dual gate complementary metal oxide semiconductor with an ultrathin gate oxide of 2 nm is demonstrated for low-voltage logic applications. Boron penetration can be effectively suppressed by the nitrogen implantation technique, even if the gate oxide film is reduced to 2 nm. It is confirmed that N-channel and P-channel metal oxide semiconductor field effect transistors (MOSFETs) with high current drivability can be realized by the thin gate oxide, although the transconductance is not inversely proportional to the gate oxide thickness due to the increase in the effect of the inversion capacitance and the gate depletion. The inverter delay time with the aluminum interconnect load is markedly improved by the highly drivable MOSFETs with thin gate oxide, especially at low-voltage operation. Furthermore, hot carrier degradation of N-channel MOSFETs can be suppressed by reducing the gate oxide thickness. However, it was found that the hot carrier degradation of P-channel MOSFETs is enhanced in the thin gate oxide region under channel hot hole injection.

AB - The high performance of 0.25 μm dual gate complementary metal oxide semiconductor with an ultrathin gate oxide of 2 nm is demonstrated for low-voltage logic applications. Boron penetration can be effectively suppressed by the nitrogen implantation technique, even if the gate oxide film is reduced to 2 nm. It is confirmed that N-channel and P-channel metal oxide semiconductor field effect transistors (MOSFETs) with high current drivability can be realized by the thin gate oxide, although the transconductance is not inversely proportional to the gate oxide thickness due to the increase in the effect of the inversion capacitance and the gate depletion. The inverter delay time with the aluminum interconnect load is markedly improved by the highly drivable MOSFETs with thin gate oxide, especially at low-voltage operation. Furthermore, hot carrier degradation of N-channel MOSFETs can be suppressed by reducing the gate oxide thickness. However, it was found that the hot carrier degradation of P-channel MOSFETs is enhanced in the thin gate oxide region under channel hot hole injection.

KW - Dual gate CMOS

KW - Gate oxide

KW - Hot carrier reliability

KW - MOSFET

KW - Tunneling current

UR - http://www.scopus.com/inward/record.url?scp=0032205615&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032205615&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032205615

VL - 37

SP - 5926

EP - 5931

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 11

ER -