Subquarter-micrometer dual gate complementary metal oxide semiconductor field effect transistor with ultrathin gate oxide of 2 nm

Masahiro Shimizu*, Takashi Kuroi, Masahide Inuishi, Hideaki Arima, Haruhiko Abe, Chihiro Hamaguchi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Physics & Astronomy

Engineering & Materials Science