Substrate engineering for reduction of alpha-particle-induced charge collection efficiency

Tomohiro Yamashita, Shigeki Komori, Takashi Kuroi, Masahide Inuishi, Hirokazu Miyoshi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Measurements of alpha-particle-induced charge collection efficiency (CCE) together with simulation analysis have been carried out for several types of substrates: a double well, a p-well in a p- epitaxial layer grown on p+ substrate (epi-substrate) and a p-well with a buried defect layer. As a result, the following have been clarified. CCE for the double well is low because the bottom n-layer acts as an effective electron absorber. CCE for the p-well in the epi-substrate increases with increase in the thickness of the epilayer because the potential difference between the heavily doped substrate and the lightly doped epilayer forms a barrier which prevents electrons from traveling into the substrate. Even for the p-well in a thin epilayer, CCE is comparable to that for the p-well in the conventional p- substrate. CCE for the p-well with a buried defect layer formed by high-energy and high-dosage ion implantation is as low as CCE for the double well because the carrier lifetime is short in the buried layer due to lattice defects.

Original languageEnglish
Pages (from-to)869-873
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number2 SUPPL. B
Publication statusPublished - 1996 Feb 1

Keywords

  • Alpha-particle-induced charge
  • Dynamic memory
  • Ion implantation
  • Silicon
  • Simulation
  • Soft error
  • Substrate engineering

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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