Substrate engineering for reduction of alpha-particle-induced charge collection efficiency

Tomohiro Yamashita, Shigeki Komori, Takashi Kuroi, Masahide Inuishi, Hirokazu Miyoshi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Measurements of alpha-particle-induced charge collection efficiency (CCE) together with simulation analysis have been carried out for several types of substrates: a double well, a p-well in a p- epitaxial layer grown on p+ substrate (epi-substrate) and a p-well with a buried defect layer. As a result, the following have been clarified. CCE for the double well is low because the bottom n-layer acts as an effective electron absorber. CCE for the p-well in the epi-substrate increases with increase in the thickness of the epilayer because the potential difference between the heavily doped substrate and the lightly doped epilayer forms a barrier which prevents electrons from traveling into the substrate. Even for the p-well in a thin epilayer, CCE is comparable to that for the p-well in the conventional p- substrate. CCE for the p-well with a buried defect layer formed by high-energy and high-dosage ion implantation is as low as CCE for the double well because the carrier lifetime is short in the buried layer due to lattice defects.

Original languageEnglish
Pages (from-to)869-873
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number2 SUPPL. B
Publication statusPublished - 1996 Feb
Externally publishedYes

Fingerprint

Alpha particles
alpha particles
engineering
Substrates
Epilayers
defects
Defects
Carrier lifetime
Electrons
Crystal defects
Epitaxial layers
carrier lifetime
Ion implantation
ion implantation
absorbers
electrons
dosage

Keywords

  • Alpha-particle-induced charge
  • Dynamic memory
  • Ion implantation
  • Silicon
  • Simulation
  • Soft error
  • Substrate engineering

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Substrate engineering for reduction of alpha-particle-induced charge collection efficiency. / Yamashita, Tomohiro; Komori, Shigeki; Kuroi, Takashi; Inuishi, Masahide; Miyoshi, Hirokazu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 2 SUPPL. B, 02.1996, p. 869-873.

Research output: Contribution to journalArticle

@article{f93b183facf747ab98c7bf7d5c566f04,
title = "Substrate engineering for reduction of alpha-particle-induced charge collection efficiency",
abstract = "Measurements of alpha-particle-induced charge collection efficiency (CCE) together with simulation analysis have been carried out for several types of substrates: a double well, a p-well in a p- epitaxial layer grown on p+ substrate (epi-substrate) and a p-well with a buried defect layer. As a result, the following have been clarified. CCE for the double well is low because the bottom n-layer acts as an effective electron absorber. CCE for the p-well in the epi-substrate increases with increase in the thickness of the epilayer because the potential difference between the heavily doped substrate and the lightly doped epilayer forms a barrier which prevents electrons from traveling into the substrate. Even for the p-well in a thin epilayer, CCE is comparable to that for the p-well in the conventional p- substrate. CCE for the p-well with a buried defect layer formed by high-energy and high-dosage ion implantation is as low as CCE for the double well because the carrier lifetime is short in the buried layer due to lattice defects.",
keywords = "Alpha-particle-induced charge, Dynamic memory, Ion implantation, Silicon, Simulation, Soft error, Substrate engineering",
author = "Tomohiro Yamashita and Shigeki Komori and Takashi Kuroi and Masahide Inuishi and Hirokazu Miyoshi",
year = "1996",
month = "2",
language = "English",
volume = "35",
pages = "869--873",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "2 SUPPL. B",

}

TY - JOUR

T1 - Substrate engineering for reduction of alpha-particle-induced charge collection efficiency

AU - Yamashita, Tomohiro

AU - Komori, Shigeki

AU - Kuroi, Takashi

AU - Inuishi, Masahide

AU - Miyoshi, Hirokazu

PY - 1996/2

Y1 - 1996/2

N2 - Measurements of alpha-particle-induced charge collection efficiency (CCE) together with simulation analysis have been carried out for several types of substrates: a double well, a p-well in a p- epitaxial layer grown on p+ substrate (epi-substrate) and a p-well with a buried defect layer. As a result, the following have been clarified. CCE for the double well is low because the bottom n-layer acts as an effective electron absorber. CCE for the p-well in the epi-substrate increases with increase in the thickness of the epilayer because the potential difference between the heavily doped substrate and the lightly doped epilayer forms a barrier which prevents electrons from traveling into the substrate. Even for the p-well in a thin epilayer, CCE is comparable to that for the p-well in the conventional p- substrate. CCE for the p-well with a buried defect layer formed by high-energy and high-dosage ion implantation is as low as CCE for the double well because the carrier lifetime is short in the buried layer due to lattice defects.

AB - Measurements of alpha-particle-induced charge collection efficiency (CCE) together with simulation analysis have been carried out for several types of substrates: a double well, a p-well in a p- epitaxial layer grown on p+ substrate (epi-substrate) and a p-well with a buried defect layer. As a result, the following have been clarified. CCE for the double well is low because the bottom n-layer acts as an effective electron absorber. CCE for the p-well in the epi-substrate increases with increase in the thickness of the epilayer because the potential difference between the heavily doped substrate and the lightly doped epilayer forms a barrier which prevents electrons from traveling into the substrate. Even for the p-well in a thin epilayer, CCE is comparable to that for the p-well in the conventional p- substrate. CCE for the p-well with a buried defect layer formed by high-energy and high-dosage ion implantation is as low as CCE for the double well because the carrier lifetime is short in the buried layer due to lattice defects.

KW - Alpha-particle-induced charge

KW - Dynamic memory

KW - Ion implantation

KW - Silicon

KW - Simulation

KW - Soft error

KW - Substrate engineering

UR - http://www.scopus.com/inward/record.url?scp=0030085413&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030085413&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030085413

VL - 35

SP - 869

EP - 873

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 2 SUPPL. B

ER -