Successful application of the 8-band kp framework to optical properties of highly strained In(Ga)As/InGaAs quantum wells with strong conduction-valence band coupling

T. Fujisawa, T. Sato, M. Mitsuhara, Takaaki Kakitsuka, T. Yamanaka, Y. Kondo, F. Kano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Band-edge optical properties of highly strained In(Ga)As/InGaAs quantum wells are analyzed by using 6- and 8-band kp theory. It is shown that the 8-band model is necessary for the analysis of In(Ga)As/InGaAs quantum wells having strain larger than 2%. The photoluminescence peak wavelength and absorption spectra of InAs/InGaAs quantum wells with the strain of 3.2 % calculated by 8-band model are in very good agreement with those obtained by experiment, showing the validity of the results presented here.

Original languageEnglish
Title of host publication2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08
Pages113-114
Number of pages2
DOIs
Publication statusPublished - 2008 Dec 22
Externally publishedYes
Event2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 - Nottingham, United Kingdom
Duration: 2008 Sep 12008 Sep 4

Publication series

Name2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08

Conference

Conference2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08
CountryUnited Kingdom
CityNottingham
Period08/9/108/9/4

Fingerprint

Valence bands
Semiconductor quantum wells
Optical properties
Absorption spectra
Photoluminescence
Wavelength
Experiments

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

Cite this

Fujisawa, T., Sato, T., Mitsuhara, M., Kakitsuka, T., Yamanaka, T., Kondo, Y., & Kano, F. (2008). Successful application of the 8-band kp framework to optical properties of highly strained In(Ga)As/InGaAs quantum wells with strong conduction-valence band coupling. In 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 (pp. 113-114). [4668268] (2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08). https://doi.org/10.1109/NUSOD.2008.4668268

Successful application of the 8-band kp framework to optical properties of highly strained In(Ga)As/InGaAs quantum wells with strong conduction-valence band coupling. / Fujisawa, T.; Sato, T.; Mitsuhara, M.; Kakitsuka, Takaaki; Yamanaka, T.; Kondo, Y.; Kano, F.

2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08. 2008. p. 113-114 4668268 (2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fujisawa, T, Sato, T, Mitsuhara, M, Kakitsuka, T, Yamanaka, T, Kondo, Y & Kano, F 2008, Successful application of the 8-band kp framework to optical properties of highly strained In(Ga)As/InGaAs quantum wells with strong conduction-valence band coupling. in 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08., 4668268, 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08, pp. 113-114, 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08, Nottingham, United Kingdom, 08/9/1. https://doi.org/10.1109/NUSOD.2008.4668268
Fujisawa T, Sato T, Mitsuhara M, Kakitsuka T, Yamanaka T, Kondo Y et al. Successful application of the 8-band kp framework to optical properties of highly strained In(Ga)As/InGaAs quantum wells with strong conduction-valence band coupling. In 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08. 2008. p. 113-114. 4668268. (2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08). https://doi.org/10.1109/NUSOD.2008.4668268
Fujisawa, T. ; Sato, T. ; Mitsuhara, M. ; Kakitsuka, Takaaki ; Yamanaka, T. ; Kondo, Y. ; Kano, F. / Successful application of the 8-band kp framework to optical properties of highly strained In(Ga)As/InGaAs quantum wells with strong conduction-valence band coupling. 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08. 2008. pp. 113-114 (2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08).
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abstract = "Band-edge optical properties of highly strained In(Ga)As/InGaAs quantum wells are analyzed by using 6- and 8-band kp theory. It is shown that the 8-band model is necessary for the analysis of In(Ga)As/InGaAs quantum wells having strain larger than 2{\%}. The photoluminescence peak wavelength and absorption spectra of InAs/InGaAs quantum wells with the strain of 3.2 {\%} calculated by 8-band model are in very good agreement with those obtained by experiment, showing the validity of the results presented here.",
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