Superconducting properties of homoepitaxial CVD diamond

Y. Takano, T. Takenouchi, S. Ishii, S. Ueda, T. Okutsu, I. Sakaguchi, H. Umezawa, H. Kawarada, M. Tachiki

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83 Citations (Scopus)

Abstract

Superconductivity was achieved above 10 K in heavily boron-doped diamond thin films deposited by the microwave plasma-assisted chemical vapor deposition (CVD) method. Advantages of the CVD method are the controllability of boron concentration in a wide range, and a high boron concentration, compared to those obtained using the high-pressure high-temperature method. The superconducting transition temperatures of homoepitaxial (111) films are determined to be 11.4 K for TC onset and 8.4 K for zero resistance from transport measurements. In contrast, the superconducting transition temperatures of (100) films TC onset = 6.3 K and TC zero = 3.2 K were significantly suppressed.

Original languageEnglish
Pages (from-to)911-914
Number of pages4
JournalDiamond and Related Materials
Volume16
Issue number4-7 SPEC. ISS.
DOIs
Publication statusPublished - 2007 Apr 1

Keywords

  • Boron
  • Diamond
  • MIT
  • Superconductivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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  • Cite this

    Takano, Y., Takenouchi, T., Ishii, S., Ueda, S., Okutsu, T., Sakaguchi, I., Umezawa, H., Kawarada, H., & Tachiki, M. (2007). Superconducting properties of homoepitaxial CVD diamond. Diamond and Related Materials, 16(4-7 SPEC. ISS.), 911-914. https://doi.org/10.1016/j.diamond.2007.01.027