Superconducting properties of homoepitaxial CVD diamond

Y. Takano, T. Takenouchi, S. Ishii, S. Ueda, T. Okutsu, I. Sakaguchi, H. Umezawa, Hiroshi Kawarada, M. Tachiki

    Research output: Contribution to journalArticle

    82 Citations (Scopus)

    Abstract

    Superconductivity was achieved above 10 K in heavily boron-doped diamond thin films deposited by the microwave plasma-assisted chemical vapor deposition (CVD) method. Advantages of the CVD method are the controllability of boron concentration in a wide range, and a high boron concentration, compared to those obtained using the high-pressure high-temperature method. The superconducting transition temperatures of homoepitaxial (111) films are determined to be 11.4 K for TC onset and 8.4 K for zero resistance from transport measurements. In contrast, the superconducting transition temperatures of (100) films TC onset = 6.3 K and TC zero = 3.2 K were significantly suppressed.

    Original languageEnglish
    Pages (from-to)911-914
    Number of pages4
    JournalDiamond and Related Materials
    Volume16
    Issue number4-7 SPEC. ISS.
    DOIs
    Publication statusPublished - 2007 Apr

    Fingerprint

    Diamond
    Boron
    Chemical vapor deposition
    Diamonds
    boron
    diamonds
    vapor deposition
    Superconducting transition temperature
    transition temperature
    controllability
    Diamond films
    Superconductivity
    Controllability
    superconductivity
    Microwaves
    Plasmas
    microwaves
    Thin films
    thin films
    Temperature

    Keywords

    • Boron
    • Diamond
    • MIT
    • Superconductivity

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this

    Takano, Y., Takenouchi, T., Ishii, S., Ueda, S., Okutsu, T., Sakaguchi, I., ... Tachiki, M. (2007). Superconducting properties of homoepitaxial CVD diamond. Diamond and Related Materials, 16(4-7 SPEC. ISS.), 911-914. https://doi.org/10.1016/j.diamond.2007.01.027

    Superconducting properties of homoepitaxial CVD diamond. / Takano, Y.; Takenouchi, T.; Ishii, S.; Ueda, S.; Okutsu, T.; Sakaguchi, I.; Umezawa, H.; Kawarada, Hiroshi; Tachiki, M.

    In: Diamond and Related Materials, Vol. 16, No. 4-7 SPEC. ISS., 04.2007, p. 911-914.

    Research output: Contribution to journalArticle

    Takano, Y, Takenouchi, T, Ishii, S, Ueda, S, Okutsu, T, Sakaguchi, I, Umezawa, H, Kawarada, H & Tachiki, M 2007, 'Superconducting properties of homoepitaxial CVD diamond', Diamond and Related Materials, vol. 16, no. 4-7 SPEC. ISS., pp. 911-914. https://doi.org/10.1016/j.diamond.2007.01.027
    Takano Y, Takenouchi T, Ishii S, Ueda S, Okutsu T, Sakaguchi I et al. Superconducting properties of homoepitaxial CVD diamond. Diamond and Related Materials. 2007 Apr;16(4-7 SPEC. ISS.):911-914. https://doi.org/10.1016/j.diamond.2007.01.027
    Takano, Y. ; Takenouchi, T. ; Ishii, S. ; Ueda, S. ; Okutsu, T. ; Sakaguchi, I. ; Umezawa, H. ; Kawarada, Hiroshi ; Tachiki, M. / Superconducting properties of homoepitaxial CVD diamond. In: Diamond and Related Materials. 2007 ; Vol. 16, No. 4-7 SPEC. ISS. pp. 911-914.
    @article{bd6ccbb3044742d1b3e67bd9d438baae,
    title = "Superconducting properties of homoepitaxial CVD diamond",
    abstract = "Superconductivity was achieved above 10 K in heavily boron-doped diamond thin films deposited by the microwave plasma-assisted chemical vapor deposition (CVD) method. Advantages of the CVD method are the controllability of boron concentration in a wide range, and a high boron concentration, compared to those obtained using the high-pressure high-temperature method. The superconducting transition temperatures of homoepitaxial (111) films are determined to be 11.4 K for TC onset and 8.4 K for zero resistance from transport measurements. In contrast, the superconducting transition temperatures of (100) films TC onset = 6.3 K and TC zero = 3.2 K were significantly suppressed.",
    keywords = "Boron, Diamond, MIT, Superconductivity",
    author = "Y. Takano and T. Takenouchi and S. Ishii and S. Ueda and T. Okutsu and I. Sakaguchi and H. Umezawa and Hiroshi Kawarada and M. Tachiki",
    year = "2007",
    month = "4",
    doi = "10.1016/j.diamond.2007.01.027",
    language = "English",
    volume = "16",
    pages = "911--914",
    journal = "Diamond and Related Materials",
    issn = "0925-9635",
    publisher = "Elsevier BV",
    number = "4-7 SPEC. ISS.",

    }

    TY - JOUR

    T1 - Superconducting properties of homoepitaxial CVD diamond

    AU - Takano, Y.

    AU - Takenouchi, T.

    AU - Ishii, S.

    AU - Ueda, S.

    AU - Okutsu, T.

    AU - Sakaguchi, I.

    AU - Umezawa, H.

    AU - Kawarada, Hiroshi

    AU - Tachiki, M.

    PY - 2007/4

    Y1 - 2007/4

    N2 - Superconductivity was achieved above 10 K in heavily boron-doped diamond thin films deposited by the microwave plasma-assisted chemical vapor deposition (CVD) method. Advantages of the CVD method are the controllability of boron concentration in a wide range, and a high boron concentration, compared to those obtained using the high-pressure high-temperature method. The superconducting transition temperatures of homoepitaxial (111) films are determined to be 11.4 K for TC onset and 8.4 K for zero resistance from transport measurements. In contrast, the superconducting transition temperatures of (100) films TC onset = 6.3 K and TC zero = 3.2 K were significantly suppressed.

    AB - Superconductivity was achieved above 10 K in heavily boron-doped diamond thin films deposited by the microwave plasma-assisted chemical vapor deposition (CVD) method. Advantages of the CVD method are the controllability of boron concentration in a wide range, and a high boron concentration, compared to those obtained using the high-pressure high-temperature method. The superconducting transition temperatures of homoepitaxial (111) films are determined to be 11.4 K for TC onset and 8.4 K for zero resistance from transport measurements. In contrast, the superconducting transition temperatures of (100) films TC onset = 6.3 K and TC zero = 3.2 K were significantly suppressed.

    KW - Boron

    KW - Diamond

    KW - MIT

    KW - Superconductivity

    UR - http://www.scopus.com/inward/record.url?scp=34047256071&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=34047256071&partnerID=8YFLogxK

    U2 - 10.1016/j.diamond.2007.01.027

    DO - 10.1016/j.diamond.2007.01.027

    M3 - Article

    AN - SCOPUS:34047256071

    VL - 16

    SP - 911

    EP - 914

    JO - Diamond and Related Materials

    JF - Diamond and Related Materials

    SN - 0925-9635

    IS - 4-7 SPEC. ISS.

    ER -