Superconductivity in nano- and micro-patterned high quality single crystalline boron-doped diamond films

Taisuke Kageura, Masakuni Hideko, Ikuto Tsuyuzaki, Shotaro Amano, Aoi Morishita, Takahide Yamaguchi, Yoshihiko Takano, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    We demonstrate nano- and micro-size patterning processes for high quality single crystal superconducting boron-doped diamond films with low damage using selective microwave plasma chemical vapour deposition and selective oxygen plasma etching. The offset critical temperature Tc(offset) of the micro strip is 10.2 K even if the strip width is 1 μm. However, we show that the critical temperature at zero resistivity Tc(zero) of several narrow strips is decreased owing to the unexpected defects induced by polishing damage and natural nanoscale scratch injury. These defects will induce a two-step superconducting transition. The probability of this tendency increases with decreasing the strip width. We also reveal that the critical current density Jc increases with decreasing the strip width, especially below 30 μm. By using a transport measurement, the maximum Jc is estimated to be 917,000 A/cm2 at 2.0 K with a strip width of 2 μm, which is the highest value reported for a superconducting diamond film. The upper critical field is estimated to be 11.5 T by the WHH approximation and 9.3 T by BCS fitting. Such high values mean superconducting diamond wiring can be used under a high magnetic field. We also attempt to fabricate nano-patterning and reveal that the transition temperature suddenly decreases below 400 nm, and superconductivity is not observed below 300 nm. This work contributes to the future development of superconducting nano- and micro-electro mechanical systems by exploiting the excellent properties of robustness, processability, high transition temperature, critical current density, and critical field associated with diamond.

    Original languageEnglish
    Pages (from-to)181-187
    Number of pages7
    JournalDiamond and Related Materials
    Volume90
    DOIs
    Publication statusPublished - 2018 Nov 1

    Fingerprint

    Diamond
    Boron
    Diamond films
    Superconductivity
    Superconducting transition temperature
    Diamonds
    Critical current density (superconductivity)
    Crystalline materials
    Defects
    Superconducting films
    Plasma etching
    Electric wiring
    Polishing
    Chemical vapor deposition
    Microwaves
    Single crystals
    Magnetic fields
    Oxygen
    Plasmas
    Temperature

    Keywords

    • Diamond film
    • Electrical properties characterization
    • Microstructure
    • Reactive ion etching (RIE)
    • Single crystal growth

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Chemistry(all)
    • Mechanical Engineering
    • Materials Chemistry
    • Electrical and Electronic Engineering

    Cite this

    Superconductivity in nano- and micro-patterned high quality single crystalline boron-doped diamond films. / Kageura, Taisuke; Hideko, Masakuni; Tsuyuzaki, Ikuto; Amano, Shotaro; Morishita, Aoi; Yamaguchi, Takahide; Takano, Yoshihiko; Kawarada, Hiroshi.

    In: Diamond and Related Materials, Vol. 90, 01.11.2018, p. 181-187.

    Research output: Contribution to journalArticle

    Kageura, Taisuke ; Hideko, Masakuni ; Tsuyuzaki, Ikuto ; Amano, Shotaro ; Morishita, Aoi ; Yamaguchi, Takahide ; Takano, Yoshihiko ; Kawarada, Hiroshi. / Superconductivity in nano- and micro-patterned high quality single crystalline boron-doped diamond films. In: Diamond and Related Materials. 2018 ; Vol. 90. pp. 181-187.
    @article{84b6980ca4c84d7f9cf2b57af457d6fa,
    title = "Superconductivity in nano- and micro-patterned high quality single crystalline boron-doped diamond films",
    abstract = "We demonstrate nano- and micro-size patterning processes for high quality single crystal superconducting boron-doped diamond films with low damage using selective microwave plasma chemical vapour deposition and selective oxygen plasma etching. The offset critical temperature Tc(offset) of the micro strip is 10.2 K even if the strip width is 1 μm. However, we show that the critical temperature at zero resistivity Tc(zero) of several narrow strips is decreased owing to the unexpected defects induced by polishing damage and natural nanoscale scratch injury. These defects will induce a two-step superconducting transition. The probability of this tendency increases with decreasing the strip width. We also reveal that the critical current density Jc increases with decreasing the strip width, especially below 30 μm. By using a transport measurement, the maximum Jc is estimated to be 917,000 A/cm2 at 2.0 K with a strip width of 2 μm, which is the highest value reported for a superconducting diamond film. The upper critical field is estimated to be 11.5 T by the WHH approximation and 9.3 T by BCS fitting. Such high values mean superconducting diamond wiring can be used under a high magnetic field. We also attempt to fabricate nano-patterning and reveal that the transition temperature suddenly decreases below 400 nm, and superconductivity is not observed below 300 nm. This work contributes to the future development of superconducting nano- and micro-electro mechanical systems by exploiting the excellent properties of robustness, processability, high transition temperature, critical current density, and critical field associated with diamond.",
    keywords = "Diamond film, Electrical properties characterization, Microstructure, Reactive ion etching (RIE), Single crystal growth",
    author = "Taisuke Kageura and Masakuni Hideko and Ikuto Tsuyuzaki and Shotaro Amano and Aoi Morishita and Takahide Yamaguchi and Yoshihiko Takano and Hiroshi Kawarada",
    year = "2018",
    month = "11",
    day = "1",
    doi = "10.1016/j.diamond.2018.10.013",
    language = "English",
    volume = "90",
    pages = "181--187",
    journal = "Diamond and Related Materials",
    issn = "0925-9635",
    publisher = "Elsevier BV",

    }

    TY - JOUR

    T1 - Superconductivity in nano- and micro-patterned high quality single crystalline boron-doped diamond films

    AU - Kageura, Taisuke

    AU - Hideko, Masakuni

    AU - Tsuyuzaki, Ikuto

    AU - Amano, Shotaro

    AU - Morishita, Aoi

    AU - Yamaguchi, Takahide

    AU - Takano, Yoshihiko

    AU - Kawarada, Hiroshi

    PY - 2018/11/1

    Y1 - 2018/11/1

    N2 - We demonstrate nano- and micro-size patterning processes for high quality single crystal superconducting boron-doped diamond films with low damage using selective microwave plasma chemical vapour deposition and selective oxygen plasma etching. The offset critical temperature Tc(offset) of the micro strip is 10.2 K even if the strip width is 1 μm. However, we show that the critical temperature at zero resistivity Tc(zero) of several narrow strips is decreased owing to the unexpected defects induced by polishing damage and natural nanoscale scratch injury. These defects will induce a two-step superconducting transition. The probability of this tendency increases with decreasing the strip width. We also reveal that the critical current density Jc increases with decreasing the strip width, especially below 30 μm. By using a transport measurement, the maximum Jc is estimated to be 917,000 A/cm2 at 2.0 K with a strip width of 2 μm, which is the highest value reported for a superconducting diamond film. The upper critical field is estimated to be 11.5 T by the WHH approximation and 9.3 T by BCS fitting. Such high values mean superconducting diamond wiring can be used under a high magnetic field. We also attempt to fabricate nano-patterning and reveal that the transition temperature suddenly decreases below 400 nm, and superconductivity is not observed below 300 nm. This work contributes to the future development of superconducting nano- and micro-electro mechanical systems by exploiting the excellent properties of robustness, processability, high transition temperature, critical current density, and critical field associated with diamond.

    AB - We demonstrate nano- and micro-size patterning processes for high quality single crystal superconducting boron-doped diamond films with low damage using selective microwave plasma chemical vapour deposition and selective oxygen plasma etching. The offset critical temperature Tc(offset) of the micro strip is 10.2 K even if the strip width is 1 μm. However, we show that the critical temperature at zero resistivity Tc(zero) of several narrow strips is decreased owing to the unexpected defects induced by polishing damage and natural nanoscale scratch injury. These defects will induce a two-step superconducting transition. The probability of this tendency increases with decreasing the strip width. We also reveal that the critical current density Jc increases with decreasing the strip width, especially below 30 μm. By using a transport measurement, the maximum Jc is estimated to be 917,000 A/cm2 at 2.0 K with a strip width of 2 μm, which is the highest value reported for a superconducting diamond film. The upper critical field is estimated to be 11.5 T by the WHH approximation and 9.3 T by BCS fitting. Such high values mean superconducting diamond wiring can be used under a high magnetic field. We also attempt to fabricate nano-patterning and reveal that the transition temperature suddenly decreases below 400 nm, and superconductivity is not observed below 300 nm. This work contributes to the future development of superconducting nano- and micro-electro mechanical systems by exploiting the excellent properties of robustness, processability, high transition temperature, critical current density, and critical field associated with diamond.

    KW - Diamond film

    KW - Electrical properties characterization

    KW - Microstructure

    KW - Reactive ion etching (RIE)

    KW - Single crystal growth

    UR - http://www.scopus.com/inward/record.url?scp=85055418095&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=85055418095&partnerID=8YFLogxK

    U2 - 10.1016/j.diamond.2018.10.013

    DO - 10.1016/j.diamond.2018.10.013

    M3 - Article

    AN - SCOPUS:85055418095

    VL - 90

    SP - 181

    EP - 187

    JO - Diamond and Related Materials

    JF - Diamond and Related Materials

    SN - 0925-9635

    ER -