Superconductivity in polycrystalline diamond thin films

Yoshihiko Takano*, Masanori Nagao, Tomohiro Takenouchi, Hitoshi Umezawa, Isao Sakaguchi, Masashi Tachiki, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

71 Citations (Scopus)


Superconductivity was discovered in heavily boron-doped diamond thin films deposited by the microwave plasma assisted chemical vapor deposition (MPCVD) method. Advantages of the MPCVD deposited diamond are the controllability of boron concentration in a wide range, and a high boron concentration, especially in (111) oriented films, compared to that of the high-pressure high-temperature method. The superconducting transition temperatures are determined to be 8.7 K for Tc onset and 5.0 K for zero resistance by transport measurements. And the upper critical field is estimated to be around 7 T.

Original languageEnglish
Pages (from-to)1936-1938
Number of pages3
JournalDiamond and Related Materials
Issue number11-12
Publication statusPublished - 2005 Nov
EventProceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue -
Duration: 2005 May 112005 May 14


  • (111) Orientation
  • Boron-doped diamond
  • Metal-insulator transition
  • Semiconductivity
  • Superconductivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Materials Chemistry
  • Electrical and Electronic Engineering


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