Superconductivity of InN

T. Inushima, N. Kato, T. Takenobu, M. Motokawa

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The crystal structure of InN is wurtzite and its interplanar spacing of (101̄1) is almost the same as that of tetragonal In(101). The crystallographic similarity produces many problems to solve about the electronic properties of semiconducting InN. Above all, there is a controversy over the possibility that In layers in InN that contains poly-crystalline phase couple by tunneling and exhibit no substantial depression of their superconducting transition temperature from the bulk In value. Here we present a superconductor to insulator transition in highly disordered InN with grains having a (101̄1) plane parallel to sapphire (0001).

Original languageEnglish
Pages (from-to)80-84
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume203
Issue number1
DOIs
Publication statusPublished - 2006 Jan
Externally publishedYes

Fingerprint

Aluminum Oxide
Superconductivity
Sapphire
Electronic properties
wurtzite
Superconducting materials
Superconducting transition temperature
sapphire
superconductivity
Crystal structure
transition temperature
spacing
insulators
Crystalline materials
crystal structure
electronics

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Superconductivity of InN. / Inushima, T.; Kato, N.; Takenobu, T.; Motokawa, M.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 203, No. 1, 01.2006, p. 80-84.

Research output: Contribution to journalArticle

Inushima, T, Kato, N, Takenobu, T & Motokawa, M 2006, 'Superconductivity of InN', Physica Status Solidi (A) Applications and Materials Science, vol. 203, no. 1, pp. 80-84. https://doi.org/10.1002/pssa.200563510
Inushima, T. ; Kato, N. ; Takenobu, T. ; Motokawa, M. / Superconductivity of InN. In: Physica Status Solidi (A) Applications and Materials Science. 2006 ; Vol. 203, No. 1. pp. 80-84.
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