Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition

Akihiro Kawano, Hitoshi Ishiwata, Shingo Iriyama, Ryosuke Okada, Takahide Yamaguchi, Yoshihiko Takano, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    47 Citations (Scopus)

    Abstract

    The critical concentration of superconductor-to-insulator transition in boron-doped diamond is determined in two ways, namely, the actual doping concentration of boron and the Hall carrier concentration. Hall carrier concentrations in (111) and (001) films exceed the actual doping concentration owing to the distortion of the Fermi surface. The high critical boron concentration in (110) films is owing to the effect of the high concentration of interstitial boron atoms. A boron concentration of 3× 1020 cm-3 in substitutional site is required for inducing superconductivity in diamond.

    Original languageEnglish
    Article number085318
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume82
    Issue number8
    DOIs
    Publication statusPublished - 2010 Aug 16

    Fingerprint

    Boron
    Diamond films
    diamond films
    Superconducting materials
    Chemical vapor deposition
    boron
    insulators
    vapor deposition
    Diamond
    Carrier concentration
    Diamonds
    Doping (additives)
    Fermi surface
    Superconductivity
    diamonds
    Atoms
    Fermi surfaces
    interstitials
    superconductivity

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition. / Kawano, Akihiro; Ishiwata, Hitoshi; Iriyama, Shingo; Okada, Ryosuke; Yamaguchi, Takahide; Takano, Yoshihiko; Kawarada, Hiroshi.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 82, No. 8, 085318, 16.08.2010.

    Research output: Contribution to journalArticle

    Kawano, Akihiro ; Ishiwata, Hitoshi ; Iriyama, Shingo ; Okada, Ryosuke ; Yamaguchi, Takahide ; Takano, Yoshihiko ; Kawarada, Hiroshi. / Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition. In: Physical Review B - Condensed Matter and Materials Physics. 2010 ; Vol. 82, No. 8.
    @article{8913a1c37eba491ebf4972287d5ba6fc,
    title = "Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition",
    abstract = "The critical concentration of superconductor-to-insulator transition in boron-doped diamond is determined in two ways, namely, the actual doping concentration of boron and the Hall carrier concentration. Hall carrier concentrations in (111) and (001) films exceed the actual doping concentration owing to the distortion of the Fermi surface. The high critical boron concentration in (110) films is owing to the effect of the high concentration of interstitial boron atoms. A boron concentration of 3× 1020 cm-3 in substitutional site is required for inducing superconductivity in diamond.",
    author = "Akihiro Kawano and Hitoshi Ishiwata and Shingo Iriyama and Ryosuke Okada and Takahide Yamaguchi and Yoshihiko Takano and Hiroshi Kawarada",
    year = "2010",
    month = "8",
    day = "16",
    doi = "10.1103/PhysRevB.82.085318",
    language = "English",
    volume = "82",
    journal = "Physical Review B-Condensed Matter",
    issn = "0163-1829",
    publisher = "American Institute of Physics Publising LLC",
    number = "8",

    }

    TY - JOUR

    T1 - Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition

    AU - Kawano, Akihiro

    AU - Ishiwata, Hitoshi

    AU - Iriyama, Shingo

    AU - Okada, Ryosuke

    AU - Yamaguchi, Takahide

    AU - Takano, Yoshihiko

    AU - Kawarada, Hiroshi

    PY - 2010/8/16

    Y1 - 2010/8/16

    N2 - The critical concentration of superconductor-to-insulator transition in boron-doped diamond is determined in two ways, namely, the actual doping concentration of boron and the Hall carrier concentration. Hall carrier concentrations in (111) and (001) films exceed the actual doping concentration owing to the distortion of the Fermi surface. The high critical boron concentration in (110) films is owing to the effect of the high concentration of interstitial boron atoms. A boron concentration of 3× 1020 cm-3 in substitutional site is required for inducing superconductivity in diamond.

    AB - The critical concentration of superconductor-to-insulator transition in boron-doped diamond is determined in two ways, namely, the actual doping concentration of boron and the Hall carrier concentration. Hall carrier concentrations in (111) and (001) films exceed the actual doping concentration owing to the distortion of the Fermi surface. The high critical boron concentration in (110) films is owing to the effect of the high concentration of interstitial boron atoms. A boron concentration of 3× 1020 cm-3 in substitutional site is required for inducing superconductivity in diamond.

    UR - http://www.scopus.com/inward/record.url?scp=77957598622&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=77957598622&partnerID=8YFLogxK

    U2 - 10.1103/PhysRevB.82.085318

    DO - 10.1103/PhysRevB.82.085318

    M3 - Article

    AN - SCOPUS:77957598622

    VL - 82

    JO - Physical Review B-Condensed Matter

    JF - Physical Review B-Condensed Matter

    SN - 0163-1829

    IS - 8

    M1 - 085318

    ER -