Superior suppression of gate current leakage in Al 2O 3/Si 3N 4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors

C. X. Wang, N. Maeda, M. Hiroki, T. Tawara, Toshiki Makimoto, T. Kobayahsi, T. Enoki

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

AlGaN/GaN-based metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs) with Al 2O 3/Si 3N 4 bilayer as insulator have been investigated in detail, and compared with the conventional HFET and Si 3N 4-based MIS-HFET devices. Al 2O 3/Si 3N 4 bilayer-based MIS-HFETs exhibited much lower gate current leakage than conventional HFET and Si 3N 4-based MIS devices under reverse gate bias, and leakage as low as 1 × 10 -11 A/mm at -15 V has been achieved in Al 2O 3/Si 3N 4-based MIS devices. By using ultrathin Al 2O 3/Si 3N 4 bilayer, very high maximum transconductance of more than 180 mS/mm with ultra-low gate leakage has been obtained in the MIS-HFET device with gate length of 1.5 μm, a reduction less than 5% in maximum transconductance compared with the conventional HFET device. This value was much smaller than the more than 30% reduction in the Si 3N 4-based MIS device, due to the employment of ultra-thin bilayer with large dielectric constant and the, large conduction band offset between Al 2O 3 and nitrides. This work demonstrates that Al 2O 3/Si 3N 4 bilayer insulator is a superior candidate for nitrides-based MIS-HFET devices.

Original languageEnglish
Pages (from-to)361-364
Number of pages4
JournalJournal of Electronic Materials
Volume34
Issue number4
Publication statusPublished - 2005 Apr
Externally publishedYes

Fingerprint

MOSFET devices
MIS (semiconductors)
High electron mobility transistors
MIS devices
Leakage currents
leakage
field effect transistors
Metals
retarding
Semiconductor materials
Transconductance
Nitrides
transconductance
nitrides
Conduction bands
insulators
Permittivity
aluminum gallium nitride
conduction bands
permittivity

Keywords

  • Al o /si n dielectric layer
  • Heterostructure field-effect transistor (HFET)
  • Metal-insulator-semiconductor (MIS)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Superior suppression of gate current leakage in Al 2O 3/Si 3N 4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors. / Wang, C. X.; Maeda, N.; Hiroki, M.; Tawara, T.; Makimoto, Toshiki; Kobayahsi, T.; Enoki, T.

In: Journal of Electronic Materials, Vol. 34, No. 4, 04.2005, p. 361-364.

Research output: Contribution to journalArticle

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abstract = "AlGaN/GaN-based metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs) with Al 2O 3/Si 3N 4 bilayer as insulator have been investigated in detail, and compared with the conventional HFET and Si 3N 4-based MIS-HFET devices. Al 2O 3/Si 3N 4 bilayer-based MIS-HFETs exhibited much lower gate current leakage than conventional HFET and Si 3N 4-based MIS devices under reverse gate bias, and leakage as low as 1 × 10 -11 A/mm at -15 V has been achieved in Al 2O 3/Si 3N 4-based MIS devices. By using ultrathin Al 2O 3/Si 3N 4 bilayer, very high maximum transconductance of more than 180 mS/mm with ultra-low gate leakage has been obtained in the MIS-HFET device with gate length of 1.5 μm, a reduction less than 5{\%} in maximum transconductance compared with the conventional HFET device. This value was much smaller than the more than 30{\%} reduction in the Si 3N 4-based MIS device, due to the employment of ultra-thin bilayer with large dielectric constant and the, large conduction band offset between Al 2O 3 and nitrides. This work demonstrates that Al 2O 3/Si 3N 4 bilayer insulator is a superior candidate for nitrides-based MIS-HFET devices.",
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AU - Tawara, T.

AU - Makimoto, Toshiki

AU - Kobayahsi, T.

AU - Enoki, T.

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AB - AlGaN/GaN-based metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs) with Al 2O 3/Si 3N 4 bilayer as insulator have been investigated in detail, and compared with the conventional HFET and Si 3N 4-based MIS-HFET devices. Al 2O 3/Si 3N 4 bilayer-based MIS-HFETs exhibited much lower gate current leakage than conventional HFET and Si 3N 4-based MIS devices under reverse gate bias, and leakage as low as 1 × 10 -11 A/mm at -15 V has been achieved in Al 2O 3/Si 3N 4-based MIS devices. By using ultrathin Al 2O 3/Si 3N 4 bilayer, very high maximum transconductance of more than 180 mS/mm with ultra-low gate leakage has been obtained in the MIS-HFET device with gate length of 1.5 μm, a reduction less than 5% in maximum transconductance compared with the conventional HFET device. This value was much smaller than the more than 30% reduction in the Si 3N 4-based MIS device, due to the employment of ultra-thin bilayer with large dielectric constant and the, large conduction band offset between Al 2O 3 and nitrides. This work demonstrates that Al 2O 3/Si 3N 4 bilayer insulator is a superior candidate for nitrides-based MIS-HFET devices.

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