Superior suppression of gate current leakage in Al2O 3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors

C. X. Wang*, N. Maeda, M. Hiroki, T. Tawara, T. Makimoto, T. Kobayahsi, T. Enoki

*Corresponding author for this work

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