Suppression of CU                         2                         ZnSnS                         4                          Nanoparticle Based Film's Decomposition during the Selenization

K. Moriuchi; S. Taki; A. Uruno; M. Kobayashi

doi:10.1109/NANO.2018.8626219

Suppression of CU ₂ ZnSnS ₄ Nanoparticle Based Film's Decomposition during the Selenization

K. Moriuchi, S. Taki, A. Uruno, M. Kobayashi

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Cu ₂ ZnSnS ₄ (CZTS) nanoparticles were prepared by the ball milling method, and CZTS layers were annealed under the Se vapor (selenization) to form CU ₂ ZnSn(S,Se) ₄ (CZTSSe) thin films. It was confirmed that the desorption of elements from the layer was occurred during the selenization. The suppression of the by-product formation was attempted by Se + Sn vapor or Se + S vapor supply during the selenization. In case of Se + Sn vapor supply, it was confirmed that the annealing temperature and the positioning of materials were import parameters. In case of Se + S vapor supply, the suppression of the by-product formation was achieved but the ratio between Se and S of CZTSSe was also affected.

Original language	English
Title of host publication	18th International Conference on Nanotechnology, NANO 2018
Publisher	IEEE Computer Society
ISBN (Electronic)	9781538653364
DOIs	https://doi.org/10.1109/NANO.2018.8626219
Publication status	Published - 2019 Jan 24
Event	18th International Conference on Nanotechnology, NANO 2018 - Cork, Ireland Duration: 2018 Jul 23 → 2018 Jul 26

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2018-July
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	18th International Conference on Nanotechnology, NANO 2018
Country/Territory	Ireland
City	Cork
Period	18/7/23 → 18/7/26

ASJC Scopus subject areas

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

Access to Document

10.1109/NANO.2018.8626219

Cite this

Moriuchi, K., Taki, S., Uruno, A., & Kobayashi, M. (2019). Suppression of CU ₂ ZnSnS ₄ Nanoparticle Based Film's Decomposition during the Selenization In 18th International Conference on Nanotechnology, NANO 2018 [8626219] (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2018-July). IEEE Computer Society. https://doi.org/10.1109/NANO.2018.8626219

Suppression of CU ₂ ZnSnS ₄ Nanoparticle Based Film's Decomposition during the Selenization . / Moriuchi, K.; Taki, S.; Uruno, A. et al.

18th International Conference on Nanotechnology, NANO 2018. IEEE Computer Society, 2019. 8626219 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2018-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Moriuchi, K, Taki, S, Uruno, A & Kobayashi, M 2019, Suppression of CU ₂ ZnSnS ₄ Nanoparticle Based Film's Decomposition during the Selenization in 18th International Conference on Nanotechnology, NANO 2018., 8626219, Proceedings of the IEEE Conference on Nanotechnology, vol. 2018-July, IEEE Computer Society, 18th International Conference on Nanotechnology, NANO 2018, Cork, Ireland, 18/7/23. https://doi.org/10.1109/NANO.2018.8626219

Moriuchi K, Taki S, Uruno A, Kobayashi M. Suppression of CU ₂ ZnSnS ₄ Nanoparticle Based Film's Decomposition during the Selenization In 18th International Conference on Nanotechnology, NANO 2018. IEEE Computer Society. 2019. 8626219. (Proceedings of the IEEE Conference on Nanotechnology). doi: 10.1109/NANO.2018.8626219

Moriuchi, K. ; Taki, S. ; Uruno, A. et al. / Suppression of CU ₂ ZnSnS ₄ Nanoparticle Based Film's Decomposition during the Selenization 18th International Conference on Nanotechnology, NANO 2018. IEEE Computer Society, 2019. (Proceedings of the IEEE Conference on Nanotechnology).

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title = " Suppression of CU 2 ZnSnS 4 Nanoparticle Based Film's Decomposition during the Selenization ",

abstract = " Cu 2 ZnSnS 4 (CZTS) nanoparticles were prepared by the ball milling method, and CZTS layers were annealed under the Se vapor (selenization) to form CU 2 ZnSn(S,Se) 4 (CZTSSe) thin films. It was confirmed that the desorption of elements from the layer was occurred during the selenization. The suppression of the by-product formation was attempted by Se + Sn vapor or Se + S vapor supply during the selenization. In case of Se + Sn vapor supply, it was confirmed that the annealing temperature and the positioning of materials were import parameters. In case of Se + S vapor supply, the suppression of the by-product formation was achieved but the ratio between Se and S of CZTSSe was also affected. ",

author = "K. Moriuchi and S. Taki and A. Uruno and M. Kobayashi",

note = "Funding Information: ACKNOWLEDGMENT The authors would like to acknowledge Mitsui Mining and Smelting Co. This work was supported in part by Waseda University Research Initiatives and Waseda University Grant for Special Research Project. Authors thank to the contribution of K. Ishigami. Publisher Copyright: {\textcopyright} 2018 IEEE.; 18th International Conference on Nanotechnology, NANO 2018 ; Conference date: 23-07-2018 Through 26-07-2018",

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N1 - Funding Information: ACKNOWLEDGMENT The authors would like to acknowledge Mitsui Mining and Smelting Co. This work was supported in part by Waseda University Research Initiatives and Waseda University Grant for Special Research Project. Authors thank to the contribution of K. Ishigami. Publisher Copyright: © 2018 IEEE.

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N2 - Cu 2 ZnSnS 4 (CZTS) nanoparticles were prepared by the ball milling method, and CZTS layers were annealed under the Se vapor (selenization) to form CU 2 ZnSn(S,Se) 4 (CZTSSe) thin films. It was confirmed that the desorption of elements from the layer was occurred during the selenization. The suppression of the by-product formation was attempted by Se + Sn vapor or Se + S vapor supply during the selenization. In case of Se + Sn vapor supply, it was confirmed that the annealing temperature and the positioning of materials were import parameters. In case of Se + S vapor supply, the suppression of the by-product formation was achieved but the ratio between Se and S of CZTSSe was also affected.

AB - Cu 2 ZnSnS 4 (CZTS) nanoparticles were prepared by the ball milling method, and CZTS layers were annealed under the Se vapor (selenization) to form CU 2 ZnSn(S,Se) 4 (CZTSSe) thin films. It was confirmed that the desorption of elements from the layer was occurred during the selenization. The suppression of the by-product formation was attempted by Se + Sn vapor or Se + S vapor supply during the selenization. In case of Se + Sn vapor supply, it was confirmed that the annealing temperature and the positioning of materials were import parameters. In case of Se + S vapor supply, the suppression of the by-product formation was achieved but the ratio between Se and S of CZTSSe was also affected.

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