Suppression of CU 2 ZnSnS 4 Nanoparticle Based Film's Decomposition during the Selenization

K. Moriuchi, S. Taki, Aya Uruno, Masakazu Kobayashi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Cu 2 ZnSnS 4 (CZTS) nanoparticles were prepared by the ball milling method, and CZTS layers were annealed under the Se vapor (selenization) to form CU 2 ZnSn(S,Se) 4 (CZTSSe) thin films. It was confirmed that the desorption of elements from the layer was occurred during the selenization. The suppression of the by-product formation was attempted by Se + Sn vapor or Se + S vapor supply during the selenization. In case of Se + Sn vapor supply, it was confirmed that the annealing temperature and the positioning of materials were import parameters. In case of Se + S vapor supply, the suppression of the by-product formation was achieved but the ratio between Se and S of CZTSSe was also affected.

    Original languageEnglish
    Title of host publication18th International Conference on Nanotechnology, NANO 2018
    PublisherIEEE Computer Society
    ISBN (Electronic)9781538653364
    DOIs
    Publication statusPublished - 2019 Jan 24
    Event18th International Conference on Nanotechnology, NANO 2018 - Cork, Ireland
    Duration: 2018 Jul 232018 Jul 26

    Publication series

    NameProceedings of the IEEE Conference on Nanotechnology
    Volume2018-July
    ISSN (Print)1944-9399
    ISSN (Electronic)1944-9380

    Conference

    Conference18th International Conference on Nanotechnology, NANO 2018
    CountryIreland
    CityCork
    Period18/7/2318/7/26

    Fingerprint

    Vapors
    retarding
    vapors
    Nanoparticles
    Decomposition
    decomposition
    nanoparticles
    Byproducts
    Ball milling
    positioning
    balls
    Desorption
    desorption
    Annealing
    Thin films
    annealing
    thin films
    Temperature
    temperature

    ASJC Scopus subject areas

    • Bioengineering
    • Electrical and Electronic Engineering
    • Materials Chemistry
    • Condensed Matter Physics

    Cite this

    Moriuchi, K., Taki, S., Uruno, A., & Kobayashi, M. (2019). Suppression of CU 2 ZnSnS 4 Nanoparticle Based Film's Decomposition during the Selenization In 18th International Conference on Nanotechnology, NANO 2018 [8626219] (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2018-July). IEEE Computer Society. https://doi.org/10.1109/NANO.2018.8626219

    Suppression of CU 2 ZnSnS 4 Nanoparticle Based Film's Decomposition during the Selenization . / Moriuchi, K.; Taki, S.; Uruno, Aya; Kobayashi, Masakazu.

    18th International Conference on Nanotechnology, NANO 2018. IEEE Computer Society, 2019. 8626219 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2018-July).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Moriuchi, K, Taki, S, Uruno, A & Kobayashi, M 2019, Suppression of CU 2 ZnSnS 4 Nanoparticle Based Film's Decomposition during the Selenization in 18th International Conference on Nanotechnology, NANO 2018., 8626219, Proceedings of the IEEE Conference on Nanotechnology, vol. 2018-July, IEEE Computer Society, 18th International Conference on Nanotechnology, NANO 2018, Cork, Ireland, 18/7/23. https://doi.org/10.1109/NANO.2018.8626219
    Moriuchi K, Taki S, Uruno A, Kobayashi M. Suppression of CU 2 ZnSnS 4 Nanoparticle Based Film's Decomposition during the Selenization In 18th International Conference on Nanotechnology, NANO 2018. IEEE Computer Society. 2019. 8626219. (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2018.8626219
    Moriuchi, K. ; Taki, S. ; Uruno, Aya ; Kobayashi, Masakazu. / Suppression of CU 2 ZnSnS 4 Nanoparticle Based Film's Decomposition during the Selenization 18th International Conference on Nanotechnology, NANO 2018. IEEE Computer Society, 2019. (Proceedings of the IEEE Conference on Nanotechnology).
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    abstract = "Cu 2 ZnSnS 4 (CZTS) nanoparticles were prepared by the ball milling method, and CZTS layers were annealed under the Se vapor (selenization) to form CU 2 ZnSn(S,Se) 4 (CZTSSe) thin films. It was confirmed that the desorption of elements from the layer was occurred during the selenization. The suppression of the by-product formation was attempted by Se + Sn vapor or Se + S vapor supply during the selenization. In case of Se + Sn vapor supply, it was confirmed that the annealing temperature and the positioning of materials were import parameters. In case of Se + S vapor supply, the suppression of the by-product formation was achieved but the ratio between Se and S of CZTSSe was also affected.",
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