Suppression of CU                         
                        2
                                                 ZnSnS                         
                        4
                                                  Nanoparticle Based Film's Decomposition during the Selenization

K. Moriuchi; S. Taki; Aya Uruno; Masakazu Kobayashi

doi:10.1109/NANO.2018.8626219

Suppression of CU ₂ ZnSnS ₄ Nanoparticle Based Film's Decomposition during the Selenization

K. Moriuchi, S. Taki, Aya Uruno, Masakazu Kobayashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Cu ₂ ZnSnS ₄ (CZTS) nanoparticles were prepared by the ball milling method, and CZTS layers were annealed under the Se vapor (selenization) to form CU ₂ ZnSn(S,Se) ₄ (CZTSSe) thin films. It was confirmed that the desorption of elements from the layer was occurred during the selenization. The suppression of the by-product formation was attempted by Se + Sn vapor or Se + S vapor supply during the selenization. In case of Se + Sn vapor supply, it was confirmed that the annealing temperature and the positioning of materials were import parameters. In case of Se + S vapor supply, the suppression of the by-product formation was achieved but the ratio between Se and S of CZTSSe was also affected.

Original language	English
Title of host publication	18th International Conference on Nanotechnology, NANO 2018
Publisher	IEEE Computer Society
ISBN (Electronic)	9781538653364
DOIs	https://doi.org/10.1109/NANO.2018.8626219
Publication status	Published - 2019 Jan 24
Event	18th International Conference on Nanotechnology, NANO 2018 - Cork, Ireland Duration: 2018 Jul 23 → 2018 Jul 26

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2018-July
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	18th International Conference on Nanotechnology, NANO 2018
Country	Ireland
City	Cork
Period	18/7/23 → 18/7/26

ASJC Scopus subject areas

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

Access to Document

10.1109/NANO.2018.8626219

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Moriuchi, K., Taki, S., Uruno, A., & Kobayashi, M. (2019). Suppression of CU ₂ ZnSnS ₄ Nanoparticle Based Film's Decomposition during the Selenization In 18th International Conference on Nanotechnology, NANO 2018 [8626219] (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2018-July). IEEE Computer Society. https://doi.org/10.1109/NANO.2018.8626219

Suppression of CU ₂ ZnSnS ₄ Nanoparticle Based Film's Decomposition during the Selenization . / Moriuchi, K.; Taki, S.; Uruno, Aya; Kobayashi, Masakazu.

18th International Conference on Nanotechnology, NANO 2018. IEEE Computer Society, 2019. 8626219 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2018-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Moriuchi, K, Taki, S, Uruno, A & Kobayashi, M 2019, Suppression of CU ₂ ZnSnS ₄ Nanoparticle Based Film's Decomposition during the Selenization in 18th International Conference on Nanotechnology, NANO 2018., 8626219, Proceedings of the IEEE Conference on Nanotechnology, vol. 2018-July, IEEE Computer Society, 18th International Conference on Nanotechnology, NANO 2018, Cork, Ireland, 18/7/23. https://doi.org/10.1109/NANO.2018.8626219

Moriuchi K, Taki S, Uruno A, Kobayashi M. Suppression of CU ₂ ZnSnS ₄ Nanoparticle Based Film's Decomposition during the Selenization In 18th International Conference on Nanotechnology, NANO 2018. IEEE Computer Society. 2019. 8626219. (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2018.8626219

Moriuchi, K. ; Taki, S. ; Uruno, Aya ; Kobayashi, Masakazu. / Suppression of CU ₂ ZnSnS ₄ Nanoparticle Based Film's Decomposition during the Selenization 18th International Conference on Nanotechnology, NANO 2018. IEEE Computer Society, 2019. (Proceedings of the IEEE Conference on Nanotechnology).

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title = " Suppression of CU 2 ZnSnS 4 Nanoparticle Based Film's Decomposition during the Selenization ",

abstract = " Cu 2 ZnSnS 4 (CZTS) nanoparticles were prepared by the ball milling method, and CZTS layers were annealed under the Se vapor (selenization) to form CU 2 ZnSn(S,Se) 4 (CZTSSe) thin films. It was confirmed that the desorption of elements from the layer was occurred during the selenization. The suppression of the by-product formation was attempted by Se + Sn vapor or Se + S vapor supply during the selenization. In case of Se + Sn vapor supply, it was confirmed that the annealing temperature and the positioning of materials were import parameters. In case of Se + S vapor supply, the suppression of the by-product formation was achieved but the ratio between Se and S of CZTSSe was also affected. ",

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N2 - Cu 2 ZnSnS 4 (CZTS) nanoparticles were prepared by the ball milling method, and CZTS layers were annealed under the Se vapor (selenization) to form CU 2 ZnSn(S,Se) 4 (CZTSSe) thin films. It was confirmed that the desorption of elements from the layer was occurred during the selenization. The suppression of the by-product formation was attempted by Se + Sn vapor or Se + S vapor supply during the selenization. In case of Se + Sn vapor supply, it was confirmed that the annealing temperature and the positioning of materials were import parameters. In case of Se + S vapor supply, the suppression of the by-product formation was achieved but the ratio between Se and S of CZTSSe was also affected.

AB - Cu 2 ZnSnS 4 (CZTS) nanoparticles were prepared by the ball milling method, and CZTS layers were annealed under the Se vapor (selenization) to form CU 2 ZnSn(S,Se) 4 (CZTSSe) thin films. It was confirmed that the desorption of elements from the layer was occurred during the selenization. The suppression of the by-product formation was attempted by Se + Sn vapor or Se + S vapor supply during the selenization. In case of Se + Sn vapor supply, it was confirmed that the annealing temperature and the positioning of materials were import parameters. In case of Se + S vapor supply, the suppression of the by-product formation was achieved but the ratio between Se and S of CZTSSe was also affected.

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