Suppression of current hysteresis in carbon nanotube thin-film transistors

Kazuhito Tsukagoshi, Masahiro Sekiguchi, Yoshinobu Aoyagi, Takayoshi Kanbara, Taishi Takenobu, Yoshihiro Iwasa

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Source-drain current hysteresis in carbon nanotube film transistors is effectively suppressed by a combination of ultraviolet/ ozone treatment and the thermal evaporation of a protective pentacene film. Thin-film channel transistors fabricated from single-walled carbon nanotubes contain amorphous carbon particles and molecules adsorbed from the atmosphere as charge-trapping sites. Ultraviolet irradiation under exposure to ozone is shown to be effective for eliminating amorphous carbon, and the evaporation of a pentacene layer prevents adsorption from the atmosphere. The combination of these treatments reduces hysteresis in carbon nanotube film transistors.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number20-24
DOIs
Publication statusPublished - 2007 Jun 15
Externally publishedYes

Fingerprint

Thin film transistors
Hysteresis
Carbon nanotubes
Transistors
transistors
carbon nanotubes
hysteresis
Amorphous carbon
retarding
Ozone
ozone
thin films
evaporation
atmospheres
Charge trapping
Thermal evaporation
carbon
Drain current
Protective coatings
Single-walled carbon nanotubes (SWCN)

Keywords

  • Carbon nanotube
  • Hysteresis
  • Pentacene
  • Thin-film transistor
  • Trap

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Suppression of current hysteresis in carbon nanotube thin-film transistors. / Tsukagoshi, Kazuhito; Sekiguchi, Masahiro; Aoyagi, Yoshinobu; Kanbara, Takayoshi; Takenobu, Taishi; Iwasa, Yoshihiro.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 46, No. 20-24, 15.06.2007.

Research output: Contribution to journalArticle

Tsukagoshi, Kazuhito ; Sekiguchi, Masahiro ; Aoyagi, Yoshinobu ; Kanbara, Takayoshi ; Takenobu, Taishi ; Iwasa, Yoshihiro. / Suppression of current hysteresis in carbon nanotube thin-film transistors. In: Japanese Journal of Applied Physics, Part 2: Letters. 2007 ; Vol. 46, No. 20-24.
@article{6653ef6f8feb450cb0452c5b567ad494,
title = "Suppression of current hysteresis in carbon nanotube thin-film transistors",
abstract = "Source-drain current hysteresis in carbon nanotube film transistors is effectively suppressed by a combination of ultraviolet/ ozone treatment and the thermal evaporation of a protective pentacene film. Thin-film channel transistors fabricated from single-walled carbon nanotubes contain amorphous carbon particles and molecules adsorbed from the atmosphere as charge-trapping sites. Ultraviolet irradiation under exposure to ozone is shown to be effective for eliminating amorphous carbon, and the evaporation of a pentacene layer prevents adsorption from the atmosphere. The combination of these treatments reduces hysteresis in carbon nanotube film transistors.",
keywords = "Carbon nanotube, Hysteresis, Pentacene, Thin-film transistor, Trap",
author = "Kazuhito Tsukagoshi and Masahiro Sekiguchi and Yoshinobu Aoyagi and Takayoshi Kanbara and Taishi Takenobu and Yoshihiro Iwasa",
year = "2007",
month = "6",
day = "15",
doi = "10.1143/JJAP.46.L571",
language = "English",
volume = "46",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "20-24",

}

TY - JOUR

T1 - Suppression of current hysteresis in carbon nanotube thin-film transistors

AU - Tsukagoshi, Kazuhito

AU - Sekiguchi, Masahiro

AU - Aoyagi, Yoshinobu

AU - Kanbara, Takayoshi

AU - Takenobu, Taishi

AU - Iwasa, Yoshihiro

PY - 2007/6/15

Y1 - 2007/6/15

N2 - Source-drain current hysteresis in carbon nanotube film transistors is effectively suppressed by a combination of ultraviolet/ ozone treatment and the thermal evaporation of a protective pentacene film. Thin-film channel transistors fabricated from single-walled carbon nanotubes contain amorphous carbon particles and molecules adsorbed from the atmosphere as charge-trapping sites. Ultraviolet irradiation under exposure to ozone is shown to be effective for eliminating amorphous carbon, and the evaporation of a pentacene layer prevents adsorption from the atmosphere. The combination of these treatments reduces hysteresis in carbon nanotube film transistors.

AB - Source-drain current hysteresis in carbon nanotube film transistors is effectively suppressed by a combination of ultraviolet/ ozone treatment and the thermal evaporation of a protective pentacene film. Thin-film channel transistors fabricated from single-walled carbon nanotubes contain amorphous carbon particles and molecules adsorbed from the atmosphere as charge-trapping sites. Ultraviolet irradiation under exposure to ozone is shown to be effective for eliminating amorphous carbon, and the evaporation of a pentacene layer prevents adsorption from the atmosphere. The combination of these treatments reduces hysteresis in carbon nanotube film transistors.

KW - Carbon nanotube

KW - Hysteresis

KW - Pentacene

KW - Thin-film transistor

KW - Trap

UR - http://www.scopus.com/inward/record.url?scp=34547828990&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547828990&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.L571

DO - 10.1143/JJAP.46.L571

M3 - Article

AN - SCOPUS:34547828990

VL - 46

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 20-24

ER -