Suppression of current hysteresis in carbon nanotube thin-film transistors

Kazuhito Tsukagoshi*, Masahiro Sekiguchi, Yoshinobu Aoyagi, Takayoshi Kanbara, Taishi Takenobu, Yoshihiro Iwasa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Source-drain current hysteresis in carbon nanotube film transistors is effectively suppressed by a combination of ultraviolet/ ozone treatment and the thermal evaporation of a protective pentacene film. Thin-film channel transistors fabricated from single-walled carbon nanotubes contain amorphous carbon particles and molecules adsorbed from the atmosphere as charge-trapping sites. Ultraviolet irradiation under exposure to ozone is shown to be effective for eliminating amorphous carbon, and the evaporation of a pentacene layer prevents adsorption from the atmosphere. The combination of these treatments reduces hysteresis in carbon nanotube film transistors.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number20-24
Publication statusPublished - 2007 Jun 15
Externally publishedYes


  • Carbon nanotube
  • Hysteresis
  • Pentacene
  • Thin-film transistor
  • Trap

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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