Suppression of die-to-die delay variability of silicon on thin buried oxide (SOTB) CMOS circuits by balanced P/N drivability control with back-bias for ultralow-voltage (0.4 V) operation

H. Makiyama, Y. Yamamoto, H. Shinohara, T. Iwamatsu, H. Oda, N. Sugii, K. Ishibashi, T. Mizutani, T. Hiramoto, Y. Yamaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation voltage (Vdd). In the ultralow-Vdd regime, however, the upsurging delay (τpd) variability is the most important challenge. This paper proposes the balanced n/p drivability control method for reducing the die-to-die delay variation by back bias applicable for various circuits. Excellent variability reduction by this balanced control is demonstrated at Vdd = 0.4 V.

Original languageEnglish
Title of host publication2013 IEEE International Electron Devices Meeting, IEDM 2013
Pages33.2.1-33.2.4
DOIs
Publication statusPublished - 2013 Dec 1
Externally publishedYes
Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
Duration: 2013 Dec 92013 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2013 IEEE International Electron Devices Meeting, IEDM 2013
CountryUnited States
CityWashington, DC
Period13/12/913/12/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Makiyama, H., Yamamoto, Y., Shinohara, H., Iwamatsu, T., Oda, H., Sugii, N., Ishibashi, K., Mizutani, T., Hiramoto, T., & Yamaguchi, Y. (2013). Suppression of die-to-die delay variability of silicon on thin buried oxide (SOTB) CMOS circuits by balanced P/N drivability control with back-bias for ultralow-voltage (0.4 V) operation. In 2013 IEEE International Electron Devices Meeting, IEDM 2013 (pp. 33.2.1-33.2.4). [6724742] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724742