Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

Masanobu Hiroki, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Toshiki Makimoto, Hideki Yamamoto

    Research output: Contribution to journalArticle

    29 Citations (Scopus)

    Abstract

    We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current-voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condition before release by self-heating effect. In contrast, after transfer, the current decrement was as small as 8% owing to improved heat dissipation: the device temperature increased to 50°C in the as-prepared HEMT, but only by several degrees in the transferred HEMT. An effective way to improve AlGaN/GaN HEMT performance by a suppression of self-heating effect has been demonstrated.

    Original languageEnglish
    Article number193509
    JournalApplied Physics Letters
    Volume105
    Issue number19
    DOIs
    Publication statusPublished - 2014 Nov 10

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    technology transfer
    high electron mobility transistors
    retarding
    heating
    sapphire
    saturation
    cooling
    copper
    electric potential
    temperature

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN. / Hiroki, Masanobu; Kumakura, Kazuhide; Kobayashi, Yasuyuki; Akasaka, Tetsuya; Makimoto, Toshiki; Yamamoto, Hideki.

    In: Applied Physics Letters, Vol. 105, No. 19, 193509, 10.11.2014.

    Research output: Contribution to journalArticle

    Hiroki, Masanobu ; Kumakura, Kazuhide ; Kobayashi, Yasuyuki ; Akasaka, Tetsuya ; Makimoto, Toshiki ; Yamamoto, Hideki. / Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN. In: Applied Physics Letters. 2014 ; Vol. 105, No. 19.
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    AU - Kobayashi, Yasuyuki

    AU - Akasaka, Tetsuya

    AU - Makimoto, Toshiki

    AU - Yamamoto, Hideki

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