Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology

T. Iwamatsu, T. Ipposhi, T. Uchida, S. Maegawa, Masahide Inuishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The partial trench isolated (PTI) structure of SOI MOSFETs was studied using stress simulation and compared with the fully trench isolation (FTI) structure. The oxidation-induced stress during trench isolation process of the PTI structure was found to be lower than those of the FTI structure. This was because the oxidant diffusion to the SOI bottom surface was easily suppressed in the PTI SOI MOSFETs. The high yield drain leakage current characteristics of the PTI SOI MOSFETs were presented.

Original languageEnglish
Title of host publicationIEEE International SOI Conference
PublisherIEEE
Pages80-81
Number of pages2
Publication statusPublished - 2000
Externally publishedYes

Fingerprint

Leakage currents
Oxidants
Oxidation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Iwamatsu, T., Ipposhi, T., Uchida, T., Maegawa, S., & Inuishi, M. (2000). Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology. In IEEE International SOI Conference (pp. 80-81). IEEE.

Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology. / Iwamatsu, T.; Ipposhi, T.; Uchida, T.; Maegawa, S.; Inuishi, Masahide.

IEEE International SOI Conference. IEEE, 2000. p. 80-81.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Iwamatsu, T, Ipposhi, T, Uchida, T, Maegawa, S & Inuishi, M 2000, Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology. in IEEE International SOI Conference. IEEE, pp. 80-81.
Iwamatsu T, Ipposhi T, Uchida T, Maegawa S, Inuishi M. Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology. In IEEE International SOI Conference. IEEE. 2000. p. 80-81
Iwamatsu, T. ; Ipposhi, T. ; Uchida, T. ; Maegawa, S. ; Inuishi, Masahide. / Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology. IEEE International SOI Conference. IEEE, 2000. pp. 80-81
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