Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology

T. Iwamatsu, T. Ipposhi, T. Uchida, S. Maegawa, M. Inuishi

Research output: Contribution to conferencePaperpeer-review

4 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science