Suppression of structural instability in LaOBiS2-xSex by Se substitution

E. Paris, Y. Mizuguchi, T. Wakita, K. Terashima, T. Yokoya, Takashi Mizokawa, N. L. Saini

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    Isovalent substitution of S by Se in LaOBiS2-xSex has a substantial effect on its electronic structure and thermoelectric properties. To investigate the possible role of BiS2 structural instability, we have studied the local structure of LaOBiS2-xSex () using temperature dependent Bi L3-edge extended x-ray absorption fine structure measurements. The results reveal that the local structure of the two compounds is significantly different. The BiS2 sub-lattice is largely distorted in LaOBiS2 (x = 0.0), with two in-plane Bi-S1 distances separated by ∼0.4 Å instead LaOBiSSe (x = 1.0) showing much smaller local disorder with two in-plane Bi-Se distances in the plane being separated by ∼0.2 Å. Temperature dependent study shows that the two Bi-S1 distances are characterized by different bond strength in LaOBiS2 (x = 0.0) while it is similar for the Bi-Se distances in LaOBiSSe (x = 1.0). The out of plane Bi-S2 bond is harder in LaOBiSSe indicating that the structural instability of BiS2 layer has large effect on the out-of-plane atomic correlations. The results suggest that the local structure of LaOBiS2-xSex is an important factor to describe differing electronic and thermal transport of the two compounds.

    Original languageEnglish
    Article number455703
    JournalJournal of Physics Condensed Matter
    Volume30
    Issue number45
    DOIs
    Publication statusPublished - 2018 Oct 22

    Fingerprint

    Substitution reactions
    retarding
    substitutes
    Electronic structure
    X rays
    Temperature
    x ray absorption
    fine structure
    disorders
    electronic structure
    temperature
    electronics
    Hot Temperature

    Keywords

    • BiS-based materials
    • effect of substitution
    • local structure and bond characteristics
    • structural instability
    • temperature dependent EXAFS

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics

    Cite this

    Paris, E., Mizuguchi, Y., Wakita, T., Terashima, K., Yokoya, T., Mizokawa, T., & Saini, N. L. (2018). Suppression of structural instability in LaOBiS2-xSex by Se substitution. Journal of Physics Condensed Matter, 30(45), [455703]. https://doi.org/10.1088/1361-648X/aae501

    Suppression of structural instability in LaOBiS2-xSex by Se substitution. / Paris, E.; Mizuguchi, Y.; Wakita, T.; Terashima, K.; Yokoya, T.; Mizokawa, Takashi; Saini, N. L.

    In: Journal of Physics Condensed Matter, Vol. 30, No. 45, 455703, 22.10.2018.

    Research output: Contribution to journalArticle

    Paris, E, Mizuguchi, Y, Wakita, T, Terashima, K, Yokoya, T, Mizokawa, T & Saini, NL 2018, 'Suppression of structural instability in LaOBiS2-xSex by Se substitution', Journal of Physics Condensed Matter, vol. 30, no. 45, 455703. https://doi.org/10.1088/1361-648X/aae501
    Paris, E. ; Mizuguchi, Y. ; Wakita, T. ; Terashima, K. ; Yokoya, T. ; Mizokawa, Takashi ; Saini, N. L. / Suppression of structural instability in LaOBiS2-xSex by Se substitution. In: Journal of Physics Condensed Matter. 2018 ; Vol. 30, No. 45.
    @article{b8a83756784549e98ff785978d4df954,
    title = "Suppression of structural instability in LaOBiS2-xSex by Se substitution",
    abstract = "Isovalent substitution of S by Se in LaOBiS2-xSex has a substantial effect on its electronic structure and thermoelectric properties. To investigate the possible role of BiS2 structural instability, we have studied the local structure of LaOBiS2-xSex () using temperature dependent Bi L3-edge extended x-ray absorption fine structure measurements. The results reveal that the local structure of the two compounds is significantly different. The BiS2 sub-lattice is largely distorted in LaOBiS2 (x = 0.0), with two in-plane Bi-S1 distances separated by ∼0.4 {\AA} instead LaOBiSSe (x = 1.0) showing much smaller local disorder with two in-plane Bi-Se distances in the plane being separated by ∼0.2 {\AA}. Temperature dependent study shows that the two Bi-S1 distances are characterized by different bond strength in LaOBiS2 (x = 0.0) while it is similar for the Bi-Se distances in LaOBiSSe (x = 1.0). The out of plane Bi-S2 bond is harder in LaOBiSSe indicating that the structural instability of BiS2 layer has large effect on the out-of-plane atomic correlations. The results suggest that the local structure of LaOBiS2-xSex is an important factor to describe differing electronic and thermal transport of the two compounds.",
    keywords = "BiS-based materials, effect of substitution, local structure and bond characteristics, structural instability, temperature dependent EXAFS",
    author = "E. Paris and Y. Mizuguchi and T. Wakita and K. Terashima and T. Yokoya and Takashi Mizokawa and Saini, {N. L.}",
    year = "2018",
    month = "10",
    day = "22",
    doi = "10.1088/1361-648X/aae501",
    language = "English",
    volume = "30",
    journal = "Journal of Physics Condensed Matter",
    issn = "0953-8984",
    publisher = "IOP Publishing Ltd.",
    number = "45",

    }

    TY - JOUR

    T1 - Suppression of structural instability in LaOBiS2-xSex by Se substitution

    AU - Paris, E.

    AU - Mizuguchi, Y.

    AU - Wakita, T.

    AU - Terashima, K.

    AU - Yokoya, T.

    AU - Mizokawa, Takashi

    AU - Saini, N. L.

    PY - 2018/10/22

    Y1 - 2018/10/22

    N2 - Isovalent substitution of S by Se in LaOBiS2-xSex has a substantial effect on its electronic structure and thermoelectric properties. To investigate the possible role of BiS2 structural instability, we have studied the local structure of LaOBiS2-xSex () using temperature dependent Bi L3-edge extended x-ray absorption fine structure measurements. The results reveal that the local structure of the two compounds is significantly different. The BiS2 sub-lattice is largely distorted in LaOBiS2 (x = 0.0), with two in-plane Bi-S1 distances separated by ∼0.4 Å instead LaOBiSSe (x = 1.0) showing much smaller local disorder with two in-plane Bi-Se distances in the plane being separated by ∼0.2 Å. Temperature dependent study shows that the two Bi-S1 distances are characterized by different bond strength in LaOBiS2 (x = 0.0) while it is similar for the Bi-Se distances in LaOBiSSe (x = 1.0). The out of plane Bi-S2 bond is harder in LaOBiSSe indicating that the structural instability of BiS2 layer has large effect on the out-of-plane atomic correlations. The results suggest that the local structure of LaOBiS2-xSex is an important factor to describe differing electronic and thermal transport of the two compounds.

    AB - Isovalent substitution of S by Se in LaOBiS2-xSex has a substantial effect on its electronic structure and thermoelectric properties. To investigate the possible role of BiS2 structural instability, we have studied the local structure of LaOBiS2-xSex () using temperature dependent Bi L3-edge extended x-ray absorption fine structure measurements. The results reveal that the local structure of the two compounds is significantly different. The BiS2 sub-lattice is largely distorted in LaOBiS2 (x = 0.0), with two in-plane Bi-S1 distances separated by ∼0.4 Å instead LaOBiSSe (x = 1.0) showing much smaller local disorder with two in-plane Bi-Se distances in the plane being separated by ∼0.2 Å. Temperature dependent study shows that the two Bi-S1 distances are characterized by different bond strength in LaOBiS2 (x = 0.0) while it is similar for the Bi-Se distances in LaOBiSSe (x = 1.0). The out of plane Bi-S2 bond is harder in LaOBiSSe indicating that the structural instability of BiS2 layer has large effect on the out-of-plane atomic correlations. The results suggest that the local structure of LaOBiS2-xSex is an important factor to describe differing electronic and thermal transport of the two compounds.

    KW - BiS-based materials

    KW - effect of substitution

    KW - local structure and bond characteristics

    KW - structural instability

    KW - temperature dependent EXAFS

    UR - http://www.scopus.com/inward/record.url?scp=85055598359&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=85055598359&partnerID=8YFLogxK

    U2 - 10.1088/1361-648X/aae501

    DO - 10.1088/1361-648X/aae501

    M3 - Article

    C2 - 30265246

    AN - SCOPUS:85055598359

    VL - 30

    JO - Journal of Physics Condensed Matter

    JF - Journal of Physics Condensed Matter

    SN - 0953-8984

    IS - 45

    M1 - 455703

    ER -