Surface characterization of smooth heteroepitaxial diamond layers on β-SiC (001)

Y. Mizuochi; H. Nagasawa; H. Kawarada

doi:10.1016/s0925-9635(96)00710-8

Surface characterization of smooth heteroepitaxial diamond layers on β-SiC (001)

Y. Mizuochi^*, H. Nagasawa, H. Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Surface morphology of continuous heteroepitaxial diamond layers on β-SiC (001) has been characterized by various methods. From surface normal SEM images, the surface was so smooth that crystal boundaries were not clearly observed, but in AFM and Normarski optical microscope images, shallow gaps supposed to be remnant boundaries and wrinkles on the surfaces were observed. On the other hand, isolated (001) surfaces before coalescence had no wrinkles and were smoother than the surface of continuous heteroepitaxial films. The wrinkles observed only on the continuous heteroepitaxial film are considered to be formed by strain caused by coalescence, and raise the new problem of heteroepitaxy when the degree of orientation is improved.

Original language	English
Pages (from-to)	277-281
Number of pages	5
Journal	Diamond and Related Materials
Volume	6
Issue number	2-4
DOIs	https://doi.org/10.1016/s0925-9635(96)00710-8
Publication status	Published - 1997 Mar

Keywords

Atomic force microscopy
Crystal growth
Heteroepitaxy
Surface

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/s0925-9635(96)00710-8

Cite this

@article{14263aaf7f6d4f759895d7d4482cb0b6,

title = "Surface characterization of smooth heteroepitaxial diamond layers on β-SiC (001)",

abstract = "Surface morphology of continuous heteroepitaxial diamond layers on β-SiC (001) has been characterized by various methods. From surface normal SEM images, the surface was so smooth that crystal boundaries were not clearly observed, but in AFM and Normarski optical microscope images, shallow gaps supposed to be remnant boundaries and wrinkles on the surfaces were observed. On the other hand, isolated (001) surfaces before coalescence had no wrinkles and were smoother than the surface of continuous heteroepitaxial films. The wrinkles observed only on the continuous heteroepitaxial film are considered to be formed by strain caused by coalescence, and raise the new problem of heteroepitaxy when the degree of orientation is improved.",

keywords = "Atomic force microscopy, Crystal growth, Heteroepitaxy, Surface",

author = "Y. Mizuochi and H. Nagasawa and H. Kawarada",

note = "Funding Information: This work has been supported in part by the Grant-in-aid for General Scientific Research (07650384) from the Ministry of Education, Science and Culture of Japan.",

year = "1997",

month = mar,

doi = "10.1016/s0925-9635(96)00710-8",

language = "English",

volume = "6",

pages = "277--281",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "2-4",

}

TY - JOUR

T1 - Surface characterization of smooth heteroepitaxial diamond layers on β-SiC (001)

AU - Mizuochi, Y.

AU - Nagasawa, H.

AU - Kawarada, H.

N1 - Funding Information: This work has been supported in part by the Grant-in-aid for General Scientific Research (07650384) from the Ministry of Education, Science and Culture of Japan.

PY - 1997/3

Y1 - 1997/3

N2 - Surface morphology of continuous heteroepitaxial diamond layers on β-SiC (001) has been characterized by various methods. From surface normal SEM images, the surface was so smooth that crystal boundaries were not clearly observed, but in AFM and Normarski optical microscope images, shallow gaps supposed to be remnant boundaries and wrinkles on the surfaces were observed. On the other hand, isolated (001) surfaces before coalescence had no wrinkles and were smoother than the surface of continuous heteroepitaxial films. The wrinkles observed only on the continuous heteroepitaxial film are considered to be formed by strain caused by coalescence, and raise the new problem of heteroepitaxy when the degree of orientation is improved.

AB - Surface morphology of continuous heteroepitaxial diamond layers on β-SiC (001) has been characterized by various methods. From surface normal SEM images, the surface was so smooth that crystal boundaries were not clearly observed, but in AFM and Normarski optical microscope images, shallow gaps supposed to be remnant boundaries and wrinkles on the surfaces were observed. On the other hand, isolated (001) surfaces before coalescence had no wrinkles and were smoother than the surface of continuous heteroepitaxial films. The wrinkles observed only on the continuous heteroepitaxial film are considered to be formed by strain caused by coalescence, and raise the new problem of heteroepitaxy when the degree of orientation is improved.

KW - Atomic force microscopy

KW - Crystal growth

KW - Heteroepitaxy

KW - Surface

UR - http://www.scopus.com/inward/record.url?scp=0000073778&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000073778&partnerID=8YFLogxK

U2 - 10.1016/s0925-9635(96)00710-8

DO - 10.1016/s0925-9635(96)00710-8

M3 - Article

AN - SCOPUS:0000073778

SN - 0925-9635

VL - 6

SP - 277

EP - 281

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 2-4

ER -

Surface characterization of smooth heteroepitaxial diamond layers on β-SiC (001)

Abstract

Keywords

ASJC Scopus subject areas

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