Surface characterization of smooth heteroepitaxial diamond layers on β-SiC (001)

Y. Mizuochi, H. Nagasawa, H. Kawarada

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Surface morphology of continuous heteroepitaxial diamond layers on β-SiC (001) has been characterized by various methods. From surface normal SEM images, the surface was so smooth that crystal boundaries were not clearly observed, but in AFM and Normarski optical microscope images, shallow gaps supposed to be remnant boundaries and wrinkles on the surfaces were observed. On the other hand, isolated (001) surfaces before coalescence had no wrinkles and were smoother than the surface of continuous heteroepitaxial films. The wrinkles observed only on the continuous heteroepitaxial film are considered to be formed by strain caused by coalescence, and raise the new problem of heteroepitaxy when the degree of orientation is improved.

Original languageEnglish
Pages (from-to)277-281
Number of pages5
JournalDiamond and Related Materials
Volume6
Issue number2-4
Publication statusPublished - 1997 Mar 1

Keywords

  • Atomic force microscopy
  • Crystal growth
  • Heteroepitaxy
  • Surface

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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