Surface compliant bonding properties of low-temperature wafer bonding using sub-micron Au particles

Hiroyuki Ishida, Toshinori Ogashiwa, Yukio Kanehira, Hiroshi Murai, Takuya Yazaki, Shin Ito, Jun Mizuno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Compression deformation property, which is directly related to an ability of surface compliant bonding and hermetic sealing, of low-temperature wafer bonding using sub-micron Au particles was studied. Wafer bonding test using 0.3 μm particles demonstrated excellent hermeticity with He leak rate better than 1 × 10-9 Pa·m3/s even on a substrate with a surface topography of a few μm. Cross-section SEM observation of the patterns with different particle sizes demonstrated that special voids are smaller in 0.1 μm particle patterns compared to that in 0.3 μm particle patterns. Deformation measurement revealed that 0.1μm particle patterns with initial height of 17 μm deformed by 9.4 μm after pressed at 100 MPa, which is fairly larger than that of 6.2 μm for 0.3 μm Au particles. This result can indicate that patterns with smaller size Au particles can be hermetically bonded at lower applied pressure.

Original languageEnglish
Title of host publicationProceedings - Electronic Components and Technology Conference
Pages1519-1523
Number of pages5
DOIs
Publication statusPublished - 2013
Event2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 - Las Vegas, NV
Duration: 2013 May 282013 May 31

Other

Other2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
CityLas Vegas, NV
Period13/5/2813/5/31

Fingerprint

Wafer bonding
Particle size
Surface topography
Temperature
Scanning electron microscopy
Substrates
Hermetic

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Ishida, H., Ogashiwa, T., Kanehira, Y., Murai, H., Yazaki, T., Ito, S., & Mizuno, J. (2013). Surface compliant bonding properties of low-temperature wafer bonding using sub-micron Au particles. In Proceedings - Electronic Components and Technology Conference (pp. 1519-1523). [6575773] https://doi.org/10.1109/ECTC.2013.6575773

Surface compliant bonding properties of low-temperature wafer bonding using sub-micron Au particles. / Ishida, Hiroyuki; Ogashiwa, Toshinori; Kanehira, Yukio; Murai, Hiroshi; Yazaki, Takuya; Ito, Shin; Mizuno, Jun.

Proceedings - Electronic Components and Technology Conference. 2013. p. 1519-1523 6575773.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ishida, H, Ogashiwa, T, Kanehira, Y, Murai, H, Yazaki, T, Ito, S & Mizuno, J 2013, Surface compliant bonding properties of low-temperature wafer bonding using sub-micron Au particles. in Proceedings - Electronic Components and Technology Conference., 6575773, pp. 1519-1523, 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013, Las Vegas, NV, 13/5/28. https://doi.org/10.1109/ECTC.2013.6575773
Ishida H, Ogashiwa T, Kanehira Y, Murai H, Yazaki T, Ito S et al. Surface compliant bonding properties of low-temperature wafer bonding using sub-micron Au particles. In Proceedings - Electronic Components and Technology Conference. 2013. p. 1519-1523. 6575773 https://doi.org/10.1109/ECTC.2013.6575773
Ishida, Hiroyuki ; Ogashiwa, Toshinori ; Kanehira, Yukio ; Murai, Hiroshi ; Yazaki, Takuya ; Ito, Shin ; Mizuno, Jun. / Surface compliant bonding properties of low-temperature wafer bonding using sub-micron Au particles. Proceedings - Electronic Components and Technology Conference. 2013. pp. 1519-1523
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