Surface conductivity in methyl-monolayer/Si heterojunction structure in the presence of water

Daisuke Niwa, Hiroshi Fukunaga, Takayuki Homma, Tetsuya Osaka

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The heterojunction between Si(111) semiconductor and the well-ordered methyl monolayer was formed to investigate the channel conduction at the surface in the heterojunction structure. With the presence of water, the methyl monolayer/Si heterojunction structure showed switching action with a high trance-conductance of 2.8 × 10-3 A/V under the application of bias voltage, while without the presence of water, such a switching behavior was not observed. The methyl monolayer/Si heterojunction structure worked as a p-type mode with the presence of water at the modified surface.

Original languageEnglish
Pages (from-to)520-521
Number of pages2
JournalChemistry Letters
Volume34
Issue number4
DOIs
Publication statusPublished - 2005 Apr 5

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Heterojunctions
Monolayers
Water
Bias voltage
Semiconductor materials

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Surface conductivity in methyl-monolayer/Si heterojunction structure in the presence of water. / Niwa, Daisuke; Fukunaga, Hiroshi; Homma, Takayuki; Osaka, Tetsuya.

In: Chemistry Letters, Vol. 34, No. 4, 05.04.2005, p. 520-521.

Research output: Contribution to journalArticle

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AB - The heterojunction between Si(111) semiconductor and the well-ordered methyl monolayer was formed to investigate the channel conduction at the surface in the heterojunction structure. With the presence of water, the methyl monolayer/Si heterojunction structure showed switching action with a high trance-conductance of 2.8 × 10-3 A/V under the application of bias voltage, while without the presence of water, such a switching behavior was not observed. The methyl monolayer/Si heterojunction structure worked as a p-type mode with the presence of water at the modified surface.

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