Surface Morphology and Electronic Properties of SnTe Films Prepared by Molecular Beam Epitaxy

Nan Su*, Kaito Tsuboi, Shotaro Kobayashi, Kota Sugimoto, Masakazu Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

SnTe is receiving a lot of attention as a topological crystalline insulator. Herein, SnTe films are grown directly on GaAs (100) substrates by molecular beam epitaxy. The surface morphology and electronic properties are measured by atomic force microscopy and Hall effect measurement, respectively. Considering previous X-ray diffraction results, the samples grown with high beam-intensity ratios show hexagonal Te segregation in the films, which deteriorates the surface morphology and decreases the conductivity. By suppressing the supply of Te, better surface morphology and electrical properties are obtained.

Original languageEnglish
JournalPhysica Status Solidi (A) Applications and Materials Science
DOIs
Publication statusAccepted/In press - 2022

Keywords

  • Hall effect measurement
  • atomic force microscopy
  • electronic properties
  • molecular beam epitaxy
  • surface morphology
  • topological crystalline insulators

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrical and Electronic Engineering

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