Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces

Hiroshi Kawarada, C. Wild, N. Herres, P. Koidl, Y. Mizuochi, A. Hokazono, H. Nagasawa

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The effect of an inclined substrate on heteroepitaxial diamond has been investigated on 4° off β-SiC(001) tilted around the [1̄10] axis. Homogeneous macro steps with (001) terraces are observed in the [1̄10] direction forming a vicinal angle of 3°-4° from the (001) surface reflecting the substrate inclination. The selective growth is effective even if the dominant orientation is inclined by several degrees from the surface normal. The tilt deviation is less than 1° in the heteroepitaxial film. p-channel field effect transistors have been fabricated on these heteroepitaxial films. The device performance is as good as that on homoepitaxial films.

Original languageEnglish
Pages (from-to)1878-1880
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number15
DOIs
Publication statusPublished - 1998
Externally publishedYes

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field effect transistors
diamonds
inclination
deviation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces. / Kawarada, Hiroshi; Wild, C.; Herres, N.; Koidl, P.; Mizuochi, Y.; Hokazono, A.; Nagasawa, H.

In: Applied Physics Letters, Vol. 72, No. 15, 1998, p. 1878-1880.

Research output: Contribution to journalArticle

Kawarada, Hiroshi ; Wild, C. ; Herres, N. ; Koidl, P. ; Mizuochi, Y. ; Hokazono, A. ; Nagasawa, H. / Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces. In: Applied Physics Letters. 1998 ; Vol. 72, No. 15. pp. 1878-1880.
@article{ba69b7f98e7644e2bf8652403dff6a06,
title = "Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces",
abstract = "The effect of an inclined substrate on heteroepitaxial diamond has been investigated on 4° off β-SiC(001) tilted around the [1̄10] axis. Homogeneous macro steps with (001) terraces are observed in the [1̄10] direction forming a vicinal angle of 3°-4° from the (001) surface reflecting the substrate inclination. The selective growth is effective even if the dominant orientation is inclined by several degrees from the surface normal. The tilt deviation is less than 1° in the heteroepitaxial film. p-channel field effect transistors have been fabricated on these heteroepitaxial films. The device performance is as good as that on homoepitaxial films.",
author = "Hiroshi Kawarada and C. Wild and N. Herres and P. Koidl and Y. Mizuochi and A. Hokazono and H. Nagasawa",
year = "1998",
doi = "10.1063/1.121213",
language = "English",
volume = "72",
pages = "1878--1880",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

TY - JOUR

T1 - Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces

AU - Kawarada, Hiroshi

AU - Wild, C.

AU - Herres, N.

AU - Koidl, P.

AU - Mizuochi, Y.

AU - Hokazono, A.

AU - Nagasawa, H.

PY - 1998

Y1 - 1998

N2 - The effect of an inclined substrate on heteroepitaxial diamond has been investigated on 4° off β-SiC(001) tilted around the [1̄10] axis. Homogeneous macro steps with (001) terraces are observed in the [1̄10] direction forming a vicinal angle of 3°-4° from the (001) surface reflecting the substrate inclination. The selective growth is effective even if the dominant orientation is inclined by several degrees from the surface normal. The tilt deviation is less than 1° in the heteroepitaxial film. p-channel field effect transistors have been fabricated on these heteroepitaxial films. The device performance is as good as that on homoepitaxial films.

AB - The effect of an inclined substrate on heteroepitaxial diamond has been investigated on 4° off β-SiC(001) tilted around the [1̄10] axis. Homogeneous macro steps with (001) terraces are observed in the [1̄10] direction forming a vicinal angle of 3°-4° from the (001) surface reflecting the substrate inclination. The selective growth is effective even if the dominant orientation is inclined by several degrees from the surface normal. The tilt deviation is less than 1° in the heteroepitaxial film. p-channel field effect transistors have been fabricated on these heteroepitaxial films. The device performance is as good as that on homoepitaxial films.

UR - http://www.scopus.com/inward/record.url?scp=0000989778&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000989778&partnerID=8YFLogxK

U2 - 10.1063/1.121213

DO - 10.1063/1.121213

M3 - Article

AN - SCOPUS:0000989778

VL - 72

SP - 1878

EP - 1880

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

ER -