The sub-initial oxidation of Si (111) surface by a high-flux pure ozone was investigated using X-ray photoelectron spectroscopy. In addition to the advantage of the pure ozone which can efficiently oxidize the Si surface at room temperature, the high-flux ozone was found to further enhance the oxidation. The possibility of producing negative ions of oxidizing gases using Rydberg electron transfer was also investigated.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - 1997 Jan 1|
|Event||Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA|
Duration: 1996 Dec 2 → 1996 Dec 4
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials