Surface oxidation of Si(111) by high purity ozone and negative ions produced by Rydberg electron transfer

H. Nonaka, A. Kurokawa, K. Nakamura, Shingo Ichimura

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The sub-initial oxidation of Si (111) surface by a high-flux pure ozone was investigated using X-ray photoelectron spectroscopy. In addition to the advantage of the pure ozone which can efficiently oxidize the Si surface at room temperature, the high-flux ozone was found to further enhance the oxidation. The possibility of producing negative ions of oxidizing gases using Rydberg electron transfer was also investigated.

Original languageEnglish
Pages (from-to)53-58
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume446
Publication statusPublished - 1997 Jan 1
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 4

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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