Surface oxidation of Si(111) by high purity ozone and negative ions produced by Rydberg electron transfer

H. Nonaka, A. Kurokawa, K. Nakamura, Shingo Ichimura

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The sub-initial oxidation of Si (111) surface by a high-flux pure ozone was investigated using X-ray photoelectron spectroscopy. In addition to the advantage of the pure ozone which can efficiently oxidize the Si surface at room temperature, the high-flux ozone was found to further enhance the oxidation. The possibility of producing negative ions of oxidizing gases using Rydberg electron transfer was also investigated.

Original languageEnglish
Pages (from-to)53-58
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume446
Publication statusPublished - 1997 Jan 1
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 4

Fingerprint

Ozone
negative ions
ozone
electron transfer
purity
Negative ions
Oxidation
oxidation
Electrons
Fluxes
ions
X ray photoelectron spectroscopy
Gases
photoelectron spectroscopy
room temperature
gases
x rays
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Surface oxidation of Si(111) by high purity ozone and negative ions produced by Rydberg electron transfer. / Nonaka, H.; Kurokawa, A.; Nakamura, K.; Ichimura, Shingo.

In: Materials Research Society Symposium - Proceedings, Vol. 446, 01.01.1997, p. 53-58.

Research output: Contribution to journalConference article

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