Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond

A. Hokazono, K. Tsugawa, H. Umezana, K. Kitatani, H. Kawarada

Research output: Contribution to journalConference article

18 Citations (Scopus)

Abstract

Metal-oxide-semiconductor field effect transistors (MOSFETs) with a surface p-channel have been fabricated on hydrogen-terminated diamond (001) surfaces without doping. The maximum transconductance of the device with the gate length of 6 μm is 16 mS/mm, which is the highest in diamond MOSFETs and comparable to that of silicon n-channel MOSFET with the same gate length. The relatively high transconductance is due to the low density of surface states on hydrogen-terminated diamond. The diamond MOSFETs operate at the temperatures of up to 330°C in air without any passivation of the device surfaces.

Original languageEnglish
Pages (from-to)1465-1471
Number of pages7
JournalSolid-State Electronics
Volume43
Issue number8
DOIs
Publication statusPublished - 1999 Aug
EventProceedings of the 1998 3rd Tropical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98) - Hayama-Machi, Jpn
Duration: 1998 Aug 301998 Sep 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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