Abstract
Metal-oxide-semiconductor field effect transistors (MOSFETs) with a surface p-channel have been fabricated on hydrogen-terminated diamond (001) surfaces without doping. The maximum transconductance of the device with the gate length of 6 μm is 16 mS/mm, which is the highest in diamond MOSFETs and comparable to that of silicon n-channel MOSFET with the same gate length. The relatively high transconductance is due to the low density of surface states on hydrogen-terminated diamond. The diamond MOSFETs operate at the temperatures of up to 330°C in air without any passivation of the device surfaces.
| Original language | English |
|---|---|
| Pages (from-to) | 1465-1471 |
| Number of pages | 7 |
| Journal | Solid-State Electronics |
| Volume | 43 |
| Issue number | 8 |
| Publication status | Published - 1999 Aug |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond. / Hokazono, A.; Tsugawa, K.; Umezana, H.; Kitatani, K.; Kawarada, Hiroshi.
In: Solid-State Electronics, Vol. 43, No. 8, 08.1999, p. 1465-1471.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond
AU - Hokazono, A.
AU - Tsugawa, K.
AU - Umezana, H.
AU - Kitatani, K.
AU - Kawarada, Hiroshi
PY - 1999/8
Y1 - 1999/8
N2 - Metal-oxide-semiconductor field effect transistors (MOSFETs) with a surface p-channel have been fabricated on hydrogen-terminated diamond (001) surfaces without doping. The maximum transconductance of the device with the gate length of 6 μm is 16 mS/mm, which is the highest in diamond MOSFETs and comparable to that of silicon n-channel MOSFET with the same gate length. The relatively high transconductance is due to the low density of surface states on hydrogen-terminated diamond. The diamond MOSFETs operate at the temperatures of up to 330°C in air without any passivation of the device surfaces.
AB - Metal-oxide-semiconductor field effect transistors (MOSFETs) with a surface p-channel have been fabricated on hydrogen-terminated diamond (001) surfaces without doping. The maximum transconductance of the device with the gate length of 6 μm is 16 mS/mm, which is the highest in diamond MOSFETs and comparable to that of silicon n-channel MOSFET with the same gate length. The relatively high transconductance is due to the low density of surface states on hydrogen-terminated diamond. The diamond MOSFETs operate at the temperatures of up to 330°C in air without any passivation of the device surfaces.
UR - http://www.scopus.com/inward/record.url?scp=0033176776&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033176776&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0033176776
VL - 43
SP - 1465
EP - 1471
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 8
ER -