TY - JOUR
T1 - Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond
AU - Hokazono, A.
AU - Tsugawa, K.
AU - Umezana, H.
AU - Kitatani, K.
AU - Kawarada, H.
N1 - Funding Information:
The authors are grateful to Prof. I. Ohdomari, Mr S. Morimoto and Mr Y. Shimura of the Micro Technology Laboratory in Waseda University for their cooperation. They also thank Mr T. Shikata and Dr N. Fujimori of Sumitomo Electric Industries, Ltd., and Mr T. Yamashita of Tokyo Gas Co., Ltd. for their collaboration. This work was supported in part by Grant in Aid for Scientific Research (B) (09555103, 10450127) from the Ministry of Education, Science, Sports and Culture of Japan and by the Murata Science Foundation.
PY - 1999/8
Y1 - 1999/8
N2 - Metal-oxide-semiconductor field effect transistors (MOSFETs) with a surface p-channel have been fabricated on hydrogen-terminated diamond (001) surfaces without doping. The maximum transconductance of the device with the gate length of 6 μm is 16 mS/mm, which is the highest in diamond MOSFETs and comparable to that of silicon n-channel MOSFET with the same gate length. The relatively high transconductance is due to the low density of surface states on hydrogen-terminated diamond. The diamond MOSFETs operate at the temperatures of up to 330°C in air without any passivation of the device surfaces.
AB - Metal-oxide-semiconductor field effect transistors (MOSFETs) with a surface p-channel have been fabricated on hydrogen-terminated diamond (001) surfaces without doping. The maximum transconductance of the device with the gate length of 6 μm is 16 mS/mm, which is the highest in diamond MOSFETs and comparable to that of silicon n-channel MOSFET with the same gate length. The relatively high transconductance is due to the low density of surface states on hydrogen-terminated diamond. The diamond MOSFETs operate at the temperatures of up to 330°C in air without any passivation of the device surfaces.
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U2 - 10.1016/S0038-1101(99)00090-8
DO - 10.1016/S0038-1101(99)00090-8
M3 - Conference article
AN - SCOPUS:0033176776
VL - 43
SP - 1465
EP - 1471
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 8
T2 - Proceedings of the 1998 3rd Tropical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98)
Y2 - 30 August 1998 through 2 September 1998
ER -