Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond

A. Hokazono; K. Tsugawa; H. Umezana; K. Kitatani; H. Kawarada

doi:10.1016/S0038-1101(99)00090-8

Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond

A. Hokazono, K. Tsugawa, H. Umezana, K. Kitatani, H. Kawarada

School of Fundamental Science and Engineering

Research output: Contribution to journal › Conference article

17 Citations (Scopus)

Abstract

Metal-oxide-semiconductor field effect transistors (MOSFETs) with a surface p-channel have been fabricated on hydrogen-terminated diamond (001) surfaces without doping. The maximum transconductance of the device with the gate length of 6 μm is 16 mS/mm, which is the highest in diamond MOSFETs and comparable to that of silicon n-channel MOSFET with the same gate length. The relatively high transconductance is due to the low density of surface states on hydrogen-terminated diamond. The diamond MOSFETs operate at the temperatures of up to 330°C in air without any passivation of the device surfaces.

Original language	English
Pages (from-to)	1465-1471
Number of pages	7
Journal	Solid-State Electronics
Volume	43
Issue number	8
DOIs	https://doi.org/10.1016/S0038-1101(99)00090-8
Publication status	Published - 1999 Aug
Event	Proceedings of the 1998 3rd Tropical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98) - Hayama-Machi, Jpn Duration: 1998 Aug 30 → 1998 Sep 2

Fingerprint

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Hokazono, A., Tsugawa, K., Umezana, H., Kitatani, K., & Kawarada, H. (1999). Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond. Solid-State Electronics, 43(8), 1465-1471. https://doi.org/10.1016/S0038-1101(99)00090-8

@article{a0ee986331ba47c3a2053e8b4e195e60,

title = "Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond",

abstract = "Metal-oxide-semiconductor field effect transistors (MOSFETs) with a surface p-channel have been fabricated on hydrogen-terminated diamond (001) surfaces without doping. The maximum transconductance of the device with the gate length of 6 μm is 16 mS/mm, which is the highest in diamond MOSFETs and comparable to that of silicon n-channel MOSFET with the same gate length. The relatively high transconductance is due to the low density of surface states on hydrogen-terminated diamond. The diamond MOSFETs operate at the temperatures of up to 330°C in air without any passivation of the device surfaces.",

author = "A. Hokazono and K. Tsugawa and H. Umezana and K. Kitatani and H. Kawarada",

year = "1999",

month = aug,

doi = "10.1016/S0038-1101(99)00090-8",

language = "English",

volume = "43",

pages = "1465--1471",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "8",

note = "Proceedings of the 1998 3rd Tropical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98) ; Conference date: 30-08-1998 Through 02-09-1998",

}

TY - JOUR

T1 - Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond

AU - Hokazono, A.

AU - Tsugawa, K.

AU - Umezana, H.

AU - Kitatani, K.

AU - Kawarada, H.

PY - 1999/8

Y1 - 1999/8

N2 - Metal-oxide-semiconductor field effect transistors (MOSFETs) with a surface p-channel have been fabricated on hydrogen-terminated diamond (001) surfaces without doping. The maximum transconductance of the device with the gate length of 6 μm is 16 mS/mm, which is the highest in diamond MOSFETs and comparable to that of silicon n-channel MOSFET with the same gate length. The relatively high transconductance is due to the low density of surface states on hydrogen-terminated diamond. The diamond MOSFETs operate at the temperatures of up to 330°C in air without any passivation of the device surfaces.

AB - Metal-oxide-semiconductor field effect transistors (MOSFETs) with a surface p-channel have been fabricated on hydrogen-terminated diamond (001) surfaces without doping. The maximum transconductance of the device with the gate length of 6 μm is 16 mS/mm, which is the highest in diamond MOSFETs and comparable to that of silicon n-channel MOSFET with the same gate length. The relatively high transconductance is due to the low density of surface states on hydrogen-terminated diamond. The diamond MOSFETs operate at the temperatures of up to 330°C in air without any passivation of the device surfaces.

UR - http://www.scopus.com/inward/record.url?scp=0033176776&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033176776&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(99)00090-8

DO - 10.1016/S0038-1101(99)00090-8

M3 - Conference article

AN - SCOPUS:0033176776

VL - 43

SP - 1465

EP - 1471

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 8

T2 - Proceedings of the 1998 3rd Tropical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98)

Y2 - 30 August 1998 through 2 September 1998

ER -

Access to Document

10.1016/S0038-1101(99)00090-8