Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond

A. Hokazono, K. Tsugawa, H. Umezana, K. Kitatani, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    17 Citations (Scopus)

    Abstract

    Metal-oxide-semiconductor field effect transistors (MOSFETs) with a surface p-channel have been fabricated on hydrogen-terminated diamond (001) surfaces without doping. The maximum transconductance of the device with the gate length of 6 μm is 16 mS/mm, which is the highest in diamond MOSFETs and comparable to that of silicon n-channel MOSFET with the same gate length. The relatively high transconductance is due to the low density of surface states on hydrogen-terminated diamond. The diamond MOSFETs operate at the temperatures of up to 330°C in air without any passivation of the device surfaces.

    Original languageEnglish
    Pages (from-to)1465-1471
    Number of pages7
    JournalSolid-State Electronics
    Volume43
    Issue number8
    Publication statusPublished - 1999 Aug

    Fingerprint

    Diamond
    MOSFET devices
    metal oxide semiconductors
    Hydrogen
    Diamonds
    field effect transistors
    diamonds
    Transconductance
    transconductance
    hydrogen
    Surface states
    Silicon
    Passivation
    passivity
    Doping (additives)
    air
    silicon
    Air
    Temperature
    temperature

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond. / Hokazono, A.; Tsugawa, K.; Umezana, H.; Kitatani, K.; Kawarada, Hiroshi.

    In: Solid-State Electronics, Vol. 43, No. 8, 08.1999, p. 1465-1471.

    Research output: Contribution to journalArticle

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    AU - Tsugawa, K.

    AU - Umezana, H.

    AU - Kitatani, K.

    AU - Kawarada, Hiroshi

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