Abstract
Metal-oxide-semiconductor field effect transistors (MOSFETs) with a surface p-channel have been fabricated on hydrogen-terminated diamond (001) surfaces without doping. The maximum transconductance of the device with the gate length of 6 μm is 16 mS/mm, which is the highest in diamond MOSFETs and comparable to that of silicon n-channel MOSFET with the same gate length. The relatively high transconductance is due to the low density of surface states on hydrogen-terminated diamond. The diamond MOSFETs operate at the temperatures of up to 330°C in air without any passivation of the device surfaces.
| Original language | English |
|---|---|
| Pages (from-to) | 1465-1471 |
| Number of pages | 7 |
| Journal | Solid-State Electronics |
| Volume | 43 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1999 Aug |
| Event | Proceedings of the 1998 3rd Tropical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98) - Hayama-Machi, Jpn Duration: 1998 Aug 30 → 1998 Sep 2 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Cite this
Hokazono, A., Tsugawa, K., Umezana, H., Kitatani, K., & Kawarada, H. (1999). Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond. Solid-State Electronics, 43(8), 1465-1471. https://doi.org/10.1016/S0038-1101(99)00090-8