Surface protrusions of chemical vapor deposited TiN films caused by Cu contamination of silicon substrates

D. Cheng, Y. Ogawa, H. Hamamura, H. Shirakawa, Toshio Ohsawa, S. Takami, H. Komiyama

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We found that surface protrusions of chemical vapor deposited TiN films are caused by reactions between copper contaminants and the silicon substrate. Depending on the size of the copper contaminant, two kinds of defects were formed: copper silicide (CuSi) and silicon dioxide. The silicon dioxide is formed because of the catalytic role of copper silicide. The defects grow both into and out of the silicon substrate. In the formation of copper silicide and silicon dioxide, copper, silicon, and oxygen are the major participating species.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number5 B
Publication statusPublished - 1998
Externally publishedYes

Fingerprint

contamination
Contamination
Vapors
vapors
Copper
copper
Silicon
silicon
Substrates
Silica
silicon dioxide
contaminants
Impurities
Defects
defects
dioxides
Oxygen
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Surface protrusions of chemical vapor deposited TiN films caused by Cu contamination of silicon substrates. / Cheng, D.; Ogawa, Y.; Hamamura, H.; Shirakawa, H.; Ohsawa, Toshio; Takami, S.; Komiyama, H.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 37, No. 5 B, 1998.

Research output: Contribution to journalArticle

@article{b9f74a3d8d514b52b45d24f21e9c0cce,
title = "Surface protrusions of chemical vapor deposited TiN films caused by Cu contamination of silicon substrates",
abstract = "We found that surface protrusions of chemical vapor deposited TiN films are caused by reactions between copper contaminants and the silicon substrate. Depending on the size of the copper contaminant, two kinds of defects were formed: copper silicide (CuSi) and silicon dioxide. The silicon dioxide is formed because of the catalytic role of copper silicide. The defects grow both into and out of the silicon substrate. In the formation of copper silicide and silicon dioxide, copper, silicon, and oxygen are the major participating species.",
author = "D. Cheng and Y. Ogawa and H. Hamamura and H. Shirakawa and Toshio Ohsawa and S. Takami and H. Komiyama",
year = "1998",
language = "English",
volume = "37",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "5 B",

}

TY - JOUR

T1 - Surface protrusions of chemical vapor deposited TiN films caused by Cu contamination of silicon substrates

AU - Cheng, D.

AU - Ogawa, Y.

AU - Hamamura, H.

AU - Shirakawa, H.

AU - Ohsawa, Toshio

AU - Takami, S.

AU - Komiyama, H.

PY - 1998

Y1 - 1998

N2 - We found that surface protrusions of chemical vapor deposited TiN films are caused by reactions between copper contaminants and the silicon substrate. Depending on the size of the copper contaminant, two kinds of defects were formed: copper silicide (CuSi) and silicon dioxide. The silicon dioxide is formed because of the catalytic role of copper silicide. The defects grow both into and out of the silicon substrate. In the formation of copper silicide and silicon dioxide, copper, silicon, and oxygen are the major participating species.

AB - We found that surface protrusions of chemical vapor deposited TiN films are caused by reactions between copper contaminants and the silicon substrate. Depending on the size of the copper contaminant, two kinds of defects were formed: copper silicide (CuSi) and silicon dioxide. The silicon dioxide is formed because of the catalytic role of copper silicide. The defects grow both into and out of the silicon substrate. In the formation of copper silicide and silicon dioxide, copper, silicon, and oxygen are the major participating species.

UR - http://www.scopus.com/inward/record.url?scp=0032066131&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032066131&partnerID=8YFLogxK

M3 - Article

VL - 37

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5 B

ER -