Surface Texture and Crystallinity Variation of ZnTe Epilayers Grown on the Step-Terrace Structure of the Sapphire Substrate

Taizo Nakasu, Takeru Kizu, Sotaro Yamashita, Takayuki Aiba, Shota Hattori, Wei Che Sun, Kosuke Taguri, Fukino Kazami, Yuki Hashimoto, Shun Ozaki, Masakazu Kobayashi, Toshiaki Asahi

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    6 Citations (Scopus)

    Abstract

    ZnTe/sapphire heterostructures were focused, and ZnTe thin films were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. A sapphire substrate possessing an atomically-smooth step-terrace structure was used to improve the crystallinity and morphology of the produced ZnTe film. The growth mode of the ZnTe thin film on a sapphire substrate with an atomically-smooth step-terrace structure was found to shift to a two-dimensional growth mode, and a ZnTe thin film possessing a flat surface was obtained. The crystallographic properties of the ZnTe film suggested that the resulting layer consisted of a single (111)-oriented domain. The photoluminescence property was also improved, and the interface lattice alignment between the ZnTe and sapphire was also affected by the atomically-smooth step-terrace structure.

    Original languageEnglish
    Pages (from-to)2127-2132
    Number of pages6
    JournalJournal of Electronic Materials
    Volume45
    Issue number4
    DOIs
    Publication statusPublished - 2016 Apr 1

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    Keywords

    • molecular beam epitaxy
    • Sapphire
    • step-terrace structure
    • x-ray diffraction
    • zinc telluride

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Materials Chemistry

    Cite this

    Nakasu, T., Kizu, T., Yamashita, S., Aiba, T., Hattori, S., Sun, W. C., Taguri, K., Kazami, F., Hashimoto, Y., Ozaki, S., Kobayashi, M., & Asahi, T. (2016). Surface Texture and Crystallinity Variation of ZnTe Epilayers Grown on the Step-Terrace Structure of the Sapphire Substrate. Journal of Electronic Materials, 45(4), 2127-2132. https://doi.org/10.1007/s11664-016-4386-8