Symmetric triangular-barrier optoelectronic switch (S-TOPS) by gas source MBE

H. Sakata, Y. Nagao, Yuichi Matsushima

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report a novel optical functional device, a symmetric triangular-barrier optoelectronic switch (S-TOPS), which consists of a symmetric n+-i-δp+-i-n+ structure of In0.53Ga0.47As, grown by a gas source molecular beam epitaxy (GSMBE). We fabricated the S-TOPS by changing the sheet-carrier concentration of the δp+ gate layer to introduce an avalanche multiplication for positive feedback in the operation. In the current vs. voltage characteristics of the S-TOPS under illumination of 1.55 μm wavelength light, we successfully confirmed a bipolar S-shaped negative differential resistance (NDR) characteristics on a certain range of sheet-carrier concentration of the δp+ gate layer. Clear latch characteristics in the input-light power vs. current characteristics were also obtained in both the positive and negative biased conditions. We found that it is very important to optimize the sheet-carrier concentration to fabricate the S-TOPS.

Original languageEnglish
Pages (from-to)1259-1264
Number of pages6
JournalJournal of Crystal Growth
Volume175-176
Issue numberPART 2
Publication statusPublished - 1997 May
Externally publishedYes

Fingerprint

Molecular beam epitaxy
Optoelectronic devices
switches
Gases
Switches
Carrier concentration
gases
Gas source molecular beam epitaxy
latches
positive feedback
multiplication
avalanches
molecular beam epitaxy
Lighting
illumination
Feedback
Wavelength
Electric potential
electric potential
wavelengths

Keywords

  • Avalanche multiplication
  • Gas source MBE
  • Negative differential resistance
  • Optical functional device

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Sakata, H., Nagao, Y., & Matsushima, Y. (1997). Symmetric triangular-barrier optoelectronic switch (S-TOPS) by gas source MBE. Journal of Crystal Growth, 175-176(PART 2), 1259-1264.

Symmetric triangular-barrier optoelectronic switch (S-TOPS) by gas source MBE. / Sakata, H.; Nagao, Y.; Matsushima, Yuichi.

In: Journal of Crystal Growth, Vol. 175-176, No. PART 2, 05.1997, p. 1259-1264.

Research output: Contribution to journalArticle

Sakata, H, Nagao, Y & Matsushima, Y 1997, 'Symmetric triangular-barrier optoelectronic switch (S-TOPS) by gas source MBE', Journal of Crystal Growth, vol. 175-176, no. PART 2, pp. 1259-1264.
Sakata H, Nagao Y, Matsushima Y. Symmetric triangular-barrier optoelectronic switch (S-TOPS) by gas source MBE. Journal of Crystal Growth. 1997 May;175-176(PART 2):1259-1264.
Sakata, H. ; Nagao, Y. ; Matsushima, Yuichi. / Symmetric triangular-barrier optoelectronic switch (S-TOPS) by gas source MBE. In: Journal of Crystal Growth. 1997 ; Vol. 175-176, No. PART 2. pp. 1259-1264.
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