Symmetric triangular-barrier optoelectronic switch (S-TOPS) by gas source MBE

H. Sakata, Y. Nagao, Yuichi Matsushima

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report a novel optical functional device, a symmetric triangular-barrier optoelectronic switch (S-TOPS), which consists of a symmetric n+-i-δp+-i-n+ structure of In0.53Ga0.47As, grown by a gas source molecular beam epitaxy (GSMBE). We fabricated the S-TOPS by changing the sheet-carrier concentration of the δp+ gate layer to introduce an avalanche multiplication for positive feedback in the operation. In the current vs. voltage characteristics of the S-TOPS under illumination of 1.55 μm wavelength light, we successfully confirmed a bipolar S-shaped negative differential resistance (NDR) characteristics on a certain range of sheet-carrier concentration of the δp+ gate layer. Clear latch characteristics in the input-light power vs. current characteristics were also obtained in both the positive and negative biased conditions. We found that it is very important to optimize the sheet-carrier concentration to fabricate the S-TOPS.

Original languageEnglish
Pages (from-to)1259-1264
Number of pages6
JournalJournal of Crystal Growth
Volume175-176
Issue numberPART 2
Publication statusPublished - 1997 May
Externally publishedYes

Keywords

  • Avalanche multiplication
  • Gas source MBE
  • Negative differential resistance
  • Optical functional device

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Sakata, H., Nagao, Y., & Matsushima, Y. (1997). Symmetric triangular-barrier optoelectronic switch (S-TOPS) by gas source MBE. Journal of Crystal Growth, 175-176(PART 2), 1259-1264.