Symmetry-dependent electronic Raman scattering in La2-xSrxCuO4: Evidence for doping-induced change in the k-space anisotropy of charge dynamics

Takuro Katsufuji, Y. Tokura, T. Ido, S. Uchida

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Low-frequency electronic Raman scattering in La2-xSrxCuO4 has been investigated over a wide compositional region, 0x0.34, covering the insulating, superconducting, and nonsuperconducting metallic compounds. We have found that the scattering intensity for the (xy) polarization predominates over that of the (xy) polarization in the low-doping region below x0.15, but vice versa at higher doping levels. The results indicate that anisotropy in the effective-mass tensor (or k-space dispersion) of the carriers changes systematically with hole doping, in contradiction with the simple band picture.

Original languageEnglish
Pages (from-to)16131-16134
Number of pages4
JournalPhysical Review B
Volume48
Issue number21
DOIs
Publication statusPublished - 1993
Externally publishedYes

Fingerprint

Raman scattering
Anisotropy
Doping (additives)
Raman spectra
anisotropy
symmetry
electronics
Polarization
Metallic compounds
polarization
Tensors
coverings
tensors
Scattering
low frequencies
scattering

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Symmetry-dependent electronic Raman scattering in La2-xSrxCuO4 : Evidence for doping-induced change in the k-space anisotropy of charge dynamics. / Katsufuji, Takuro; Tokura, Y.; Ido, T.; Uchida, S.

In: Physical Review B, Vol. 48, No. 21, 1993, p. 16131-16134.

Research output: Contribution to journalArticle

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