Synchronous ultra-high-density 2RW dual-port 8T-SRAM with circumvention of simultaneous common-row-access

Koji Nii, Yasumasa Tsukamoto, Makoto Yabuuchi, Yasuhiro Masuda, Susumu Imaoka, Keiichi Usui, Shigeki Ohbayashi, Hiroshi Makino, Hirofumi Shinohara

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

We propose an access scheme for a synchronous dual-port (DP) SRAM that minimizes the 8T-DP-cell area and maintains cell stability. A priority row decoder circuit and shifted bitline access scheme eliminates access conflict issues. Using 65 nm CMOS technology (hp90) with the proposed scheme, we fabricated 32 kB DP-SRAM macros. We obtained a 0.71 μm2 8T-DP-cell for which the cell size is only 1.44× larger than a 6T-single-port (SP)-cell. The bit-density of the fabricated 32 kB DP-RAM macro is 667 kbit/mm2 , which is 25% larger than a conventional 8T SRAM. The standby leakage is 27% less because of the small drive-NMOS transistor of the proposed 8T-DP-cell.

Original languageEnglish
Article number4787570
Pages (from-to)977-986
Number of pages10
JournalIEEE Journal of Solid-State Circuits
Volume44
Issue number3
DOIs
Publication statusPublished - 2009 Mar 1

Keywords

  • 65 nm
  • CMOS
  • Dual-port
  • Embedded SRAM
  • High density
  • Low power
  • Low voltage
  • Memory
  • Stability
  • Two-port
  • Variability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Nii, K., Tsukamoto, Y., Yabuuchi, M., Masuda, Y., Imaoka, S., Usui, K., Ohbayashi, S., Makino, H., & Shinohara, H. (2009). Synchronous ultra-high-density 2RW dual-port 8T-SRAM with circumvention of simultaneous common-row-access. IEEE Journal of Solid-State Circuits, 44(3), 977-986. [4787570]. https://doi.org/10.1109/JSSC.2009.2013766