Synchrotron-radiation photochemical-vapor deposition of amorphous carbon

A. Endo; S. Takami; Toshio Ohsawa; I. Honma; H. Komiyama

doi:10.1063/1.358639

Synchrotron-radiation photochemical-vapor deposition of amorphous carbon

A. Endo^*, S. Takami, Toshio Ohsawa, I. Honma, H. Komiyama

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

High-energy synchrotron-radiation (SR) light was applied to the photochemical-vapor deposition of amorphous carbon films. The source gases of CH₄ and H₂ have been directly photodissociated by the ultraviolet SR light to deposit carbon films on the heated Si substrate. The film structure was characterized by field-emission scanning electron microscopy, Raman scattering, and infrared absorption, which indicate the film to be a rigid amorphous structure comprised of mostly sp³-bonded carbon. The advantage as well as the limitation of the synchrotron-radiation process to the synthesis of functional materials is discussed.

Original language	English
Pages (from-to)	3453-3457
Number of pages	5
Journal	Journal of Applied Physics
Volume	77
Issue number	7
DOIs	https://doi.org/10.1063/1.358639
Publication status	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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10.1063/1.358639

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title = "Synchrotron-radiation photochemical-vapor deposition of amorphous carbon",

abstract = "High-energy synchrotron-radiation (SR) light was applied to the photochemical-vapor deposition of amorphous carbon films. The source gases of CH4 and H2 have been directly photodissociated by the ultraviolet SR light to deposit carbon films on the heated Si substrate. The film structure was characterized by field-emission scanning electron microscopy, Raman scattering, and infrared absorption, which indicate the film to be a rigid amorphous structure comprised of mostly sp3-bonded carbon. The advantage as well as the limitation of the synchrotron-radiation process to the synthesis of functional materials is discussed.",

author = "A. Endo and S. Takami and Toshio Ohsawa and I. Honma and H. Komiyama",

year = "1995",

doi = "10.1063/1.358639",

language = "English",

volume = "77",

pages = "3453--3457",

journal = "Journal of Applied Physics",

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T1 - Synchrotron-radiation photochemical-vapor deposition of amorphous carbon

AU - Endo, A.

AU - Takami, S.

AU - Ohsawa, Toshio

AU - Honma, I.

AU - Komiyama, H.

PY - 1995

Y1 - 1995

N2 - High-energy synchrotron-radiation (SR) light was applied to the photochemical-vapor deposition of amorphous carbon films. The source gases of CH4 and H2 have been directly photodissociated by the ultraviolet SR light to deposit carbon films on the heated Si substrate. The film structure was characterized by field-emission scanning electron microscopy, Raman scattering, and infrared absorption, which indicate the film to be a rigid amorphous structure comprised of mostly sp3-bonded carbon. The advantage as well as the limitation of the synchrotron-radiation process to the synthesis of functional materials is discussed.

AB - High-energy synchrotron-radiation (SR) light was applied to the photochemical-vapor deposition of amorphous carbon films. The source gases of CH4 and H2 have been directly photodissociated by the ultraviolet SR light to deposit carbon films on the heated Si substrate. The film structure was characterized by field-emission scanning electron microscopy, Raman scattering, and infrared absorption, which indicate the film to be a rigid amorphous structure comprised of mostly sp3-bonded carbon. The advantage as well as the limitation of the synchrotron-radiation process to the synthesis of functional materials is discussed.

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EP - 3457

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Synchrotron-radiation photochemical-vapor deposition of amorphous carbon

Abstract

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