Synchrotron-radiation-stimulated desorption of O+ ions from an oxidized silicon surface

Michio Niwano, Hitoshi Katakura, Yuji Takakuwa, Nobuo Miyamoto, Atsushi Hiraiwa, Kunihiro Yagi

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Abstract

The photon-stimulated desorption of ions from a naturally oxidized Si(100) surface has been studied using synchrotron radiation (SR). For mass analysis of the PSD ions, the time-of-flight method was utilized. Desorption of O + ions is clearly observed on the surface during exposure to unmonochromatized SR in the vacuum ultraviolet (VUV) region. Si 2p core level photoemission measurements show that the photoemission peak corresponding to silicon oxide is reduced in intensity after exposure to the radiation. The present experimental results indicate the possibility of removing a thin SiO2 layer on a Si(100) surface at low temperatures by exposing the surface to SR in the VUV region.

Original languageEnglish
Pages (from-to)1125-1127
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number12
DOIs
Publication statusPublished - 1990
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Niwano, M., Katakura, H., Takakuwa, Y., Miyamoto, N., Hiraiwa, A., & Yagi, K. (1990). Synchrotron-radiation-stimulated desorption of O+ ions from an oxidized silicon surface. Applied Physics Letters, 56(12), 1125-1127. https://doi.org/10.1063/1.102588