Synthesis of β-FeSi2 for optical applications by Fe triple-energy ion implantation into Si(100) and Si(111) substrates

Hiroshi Katsumata, Yunosuke Makita, Naoto Kobayashi, Masataka Hasegawa, Hajime Shibata, Shin Ichiro Uekusa

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Abstract

Ion-beam synthesis of β-FeSi2 layers was performed by Fe triple-energy ion implantation into Si(100) and Si(111) substrates and subsequent two-step annealing. By keeping the first-step annealing temperature constant at 600 °C, the physical properties were characterized as a function of the second-step annealing temperature (Ta). X-ray diffraction measurements revealed that only the β phase was formed on Si(100) substrates for Ta below 930 °C, whereas the a phase coexisted with the β phase for all Ta values even on as-implanted Si(111) substrates. The electrical resistivities of β-FeSi2 formed on Si(111) substrates with Ta = 875 and 915 °C were found to be 0.1-0.3 Ω cm. It was shown by optical absorption measurements that the band gap decreased from 0.83 to 0.78 eV with increasing Ta. Samples with both Si(100) and Si(111) substrates with Ta = 875 °C exhibited a defect-related optical absorption band at around 0.7 eV. In the 2 K photoluminescence spectra of these two samples with Ta = 875 °C, only a very broad emission band peaking at 0.8 eV was observed. However, the Si(111) sample with Ta = 915 °C showed a sharp emission line at 0.837 eV, which was assigned to the intrinsic optical transition of β-FeSi2.

Original languageEnglish
Pages (from-to)252-255
Number of pages4
JournalThin Solid Films
Volume281-282
Issue number1-2
DOIs
Publication statusPublished - 1996 Aug 1
Externally publishedYes

Keywords

  • Ion implantation
  • Optical properties
  • Silicon
  • Suicides

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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    Katsumata, H., Makita, Y., Kobayashi, N., Hasegawa, M., Shibata, H., & Uekusa, S. I. (1996). Synthesis of β-FeSi2 for optical applications by Fe triple-energy ion implantation into Si(100) and Si(111) substrates. Thin Solid Films, 281-282(1-2), 252-255. https://doi.org/10.1016/0040-6090(96)08645-2