Synthesis of β-FeSi2 for optical applications by Fe triple-energy ion implantation into Si(100) and Si(111) substrates

Hiroshi Katsumata, Yunosuke Makita, Naoto Kobayashi, Masataka Hasegawa, Hajime Shibata, Shin Ichiro Uekusa

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Ion-beam synthesis of β-FeSi2 layers was performed by Fe triple-energy ion implantation into Si(100) and Si(111) substrates and subsequent two-step annealing. By keeping the first-step annealing temperature constant at 600 °C, the physical properties were characterized as a function of the second-step annealing temperature (Ta). X-ray diffraction measurements revealed that only the β phase was formed on Si(100) substrates for Ta below 930 °C, whereas the a phase coexisted with the β phase for all Ta values even on as-implanted Si(111) substrates. The electrical resistivities of β-FeSi2 formed on Si(111) substrates with Ta = 875 and 915 °C were found to be 0.1-0.3 Ω cm. It was shown by optical absorption measurements that the band gap decreased from 0.83 to 0.78 eV with increasing Ta. Samples with both Si(100) and Si(111) substrates with Ta = 875 °C exhibited a defect-related optical absorption band at around 0.7 eV. In the 2 K photoluminescence spectra of these two samples with Ta = 875 °C, only a very broad emission band peaking at 0.8 eV was observed. However, the Si(111) sample with Ta = 915 °C showed a sharp emission line at 0.837 eV, which was assigned to the intrinsic optical transition of β-FeSi2.

Original languageEnglish
Pages (from-to)252-255
Number of pages4
JournalThin Solid Films
Volume281-282
Issue number1-2
DOIs
Publication statusPublished - 1996 Aug 1
Externally publishedYes

Fingerprint

Ion implantation
ion implantation
Substrates
synthesis
Temperature
temperature
energy
Annealing
Light absorption
annealing
optical absorption
Optical transitions
optical transition
Ion beams
Absorption spectra
Photoluminescence
Energy gap
Physical properties
physical properties
ion beams

Keywords

  • Ion implantation
  • Optical properties
  • Silicon
  • Suicides

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Synthesis of β-FeSi2 for optical applications by Fe triple-energy ion implantation into Si(100) and Si(111) substrates. / Katsumata, Hiroshi; Makita, Yunosuke; Kobayashi, Naoto; Hasegawa, Masataka; Shibata, Hajime; Uekusa, Shin Ichiro.

In: Thin Solid Films, Vol. 281-282, No. 1-2, 01.08.1996, p. 252-255.

Research output: Contribution to journalArticle

Katsumata, Hiroshi ; Makita, Yunosuke ; Kobayashi, Naoto ; Hasegawa, Masataka ; Shibata, Hajime ; Uekusa, Shin Ichiro. / Synthesis of β-FeSi2 for optical applications by Fe triple-energy ion implantation into Si(100) and Si(111) substrates. In: Thin Solid Films. 1996 ; Vol. 281-282, No. 1-2. pp. 252-255.
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