Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization

Naoto Kobayashi, M. Hasegawa, N. Hayashi, H. Katsumata, Y. Makita, H. Shibata, S. Uekusa

Research output: Contribution to journalArticle

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Abstract

In order to synthesize metastable group-IV binary alloy semiconductor thin films on Si, Si(100) substrates were implanted with 17 keV C ions for Si1-yCy/Si and alternatively with 110 keV Sn ions for Si1-zSnz/Si. Subsequent ion-beam-induced epitaxial crystallization (IBIEC) with 400 keV Ar ions at 300-400°C has induced a good epitaxial growth up to the surface both for Si1-yCy/Si (y = 0.014 at peak concentration) and for Si1-zSnz/Si (z = 0.029 at peak concentration). X-ray diffraction measurements have shown a growth of Si1-yCy/Si with smaller tensile strain than for Si1-yCy/Si grown by solid phase epitaxial growth (SPEG) up to 650°C. Photoluminescence measurements have revealed properties of defect related to I1(Ar) line and G line emissions for IBIEC-grown Si1-yCy/Si samples. IBIEC has induced an incomplete crystalline growth and a loss of implanted Sn atoms for Si1-zSnz/Si (z = 0.086 at peak concentration).

Original languageEnglish
Pages (from-to)498-502
Number of pages5
JournalApplied Surface Science
Volume100-101
DOIs
Publication statusPublished - 1996 Jul
Externally publishedYes

Fingerprint

Crystallization
Ion implantation
Ion beams
ion implantation
ion beams
Ions
crystallization
Semiconductor materials
Epitaxial growth
synthesis
Tensile strain
Binary alloys
ions
Photoluminescence
binary alloys
Crystalline materials
solid phases
X ray diffraction
Thin films
Atoms

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization. / Kobayashi, Naoto; Hasegawa, M.; Hayashi, N.; Katsumata, H.; Makita, Y.; Shibata, H.; Uekusa, S.

In: Applied Surface Science, Vol. 100-101, 07.1996, p. 498-502.

Research output: Contribution to journalArticle

Kobayashi, Naoto ; Hasegawa, M. ; Hayashi, N. ; Katsumata, H. ; Makita, Y. ; Shibata, H. ; Uekusa, S. / Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization. In: Applied Surface Science. 1996 ; Vol. 100-101. pp. 498-502.
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AU - Hayashi, N.

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AU - Makita, Y.

AU - Shibata, H.

AU - Uekusa, S.

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