Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization

Naoto Kobayashi; M. Hasegawa; N. Hayashi; H. Katsumata; Y. Makita; H. Shibata; S. Uekusa

doi:10.1016/0169-4332(96)00327-3

Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization

Naoto Kobayashi^*, M. Hasegawa, N. Hayashi, H. Katsumata, Y. Makita, H. Shibata, S. Uekusa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In order to synthesize metastable group-IV binary alloy semiconductor thin films on Si, Si(100) substrates were implanted with 17 keV C ions for Si_1-yC_y/Si and alternatively with 110 keV Sn ions for Si_1-zSn_z/Si. Subsequent ion-beam-induced epitaxial crystallization (IBIEC) with 400 keV Ar ions at 300-400°C has induced a good epitaxial growth up to the surface both for Si_1-yC_y/Si (y = 0.014 at peak concentration) and for Si_1-zSn_z/Si (z = 0.029 at peak concentration). X-ray diffraction measurements have shown a growth of Si_1-yC_y/Si with smaller tensile strain than for Si_1-yC_y/Si grown by solid phase epitaxial growth (SPEG) up to 650°C. Photoluminescence measurements have revealed properties of defect related to I₁(Ar) line and G line emissions for IBIEC-grown Si_1-yC_y/Si samples. IBIEC has induced an incomplete crystalline growth and a loss of implanted Sn atoms for Si_1-zSn_z/Si (z = 0.086 at peak concentration).

Original language	English
Pages (from-to)	498-502
Number of pages	5
Journal	Applied Surface Science
Volume	100-101
DOIs	https://doi.org/10.1016/0169-4332(96)00327-3
Publication status	Published - 1996 Jul
Externally published	Yes

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Surfaces, Coatings and Films
Condensed Matter Physics

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@article{34a8970566594301a3f3cc6c4bded147,

title = "Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization",

abstract = "In order to synthesize metastable group-IV binary alloy semiconductor thin films on Si, Si(100) substrates were implanted with 17 keV C ions for Si1-yCy/Si and alternatively with 110 keV Sn ions for Si1-zSnz/Si. Subsequent ion-beam-induced epitaxial crystallization (IBIEC) with 400 keV Ar ions at 300-400°C has induced a good epitaxial growth up to the surface both for Si1-yCy/Si (y = 0.014 at peak concentration) and for Si1-zSnz/Si (z = 0.029 at peak concentration). X-ray diffraction measurements have shown a growth of Si1-yCy/Si with smaller tensile strain than for Si1-yCy/Si grown by solid phase epitaxial growth (SPEG) up to 650°C. Photoluminescence measurements have revealed properties of defect related to I1(Ar) line and G line emissions for IBIEC-grown Si1-yCy/Si samples. IBIEC has induced an incomplete crystalline growth and a loss of implanted Sn atoms for Si1-zSnz/Si (z = 0.086 at peak concentration).",

author = "Naoto Kobayashi and M. Hasegawa and N. Hayashi and H. Katsumata and Y. Makita and H. Shibata and S. Uekusa",

year = "1996",

month = jul,

doi = "10.1016/0169-4332(96)00327-3",

language = "English",

volume = "100-101",

pages = "498--502",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization

AU - Kobayashi, Naoto

AU - Hasegawa, M.

AU - Hayashi, N.

AU - Katsumata, H.

AU - Makita, Y.

AU - Shibata, H.

AU - Uekusa, S.

PY - 1996/7

Y1 - 1996/7

N2 - In order to synthesize metastable group-IV binary alloy semiconductor thin films on Si, Si(100) substrates were implanted with 17 keV C ions for Si1-yCy/Si and alternatively with 110 keV Sn ions for Si1-zSnz/Si. Subsequent ion-beam-induced epitaxial crystallization (IBIEC) with 400 keV Ar ions at 300-400°C has induced a good epitaxial growth up to the surface both for Si1-yCy/Si (y = 0.014 at peak concentration) and for Si1-zSnz/Si (z = 0.029 at peak concentration). X-ray diffraction measurements have shown a growth of Si1-yCy/Si with smaller tensile strain than for Si1-yCy/Si grown by solid phase epitaxial growth (SPEG) up to 650°C. Photoluminescence measurements have revealed properties of defect related to I1(Ar) line and G line emissions for IBIEC-grown Si1-yCy/Si samples. IBIEC has induced an incomplete crystalline growth and a loss of implanted Sn atoms for Si1-zSnz/Si (z = 0.086 at peak concentration).

AB - In order to synthesize metastable group-IV binary alloy semiconductor thin films on Si, Si(100) substrates were implanted with 17 keV C ions for Si1-yCy/Si and alternatively with 110 keV Sn ions for Si1-zSnz/Si. Subsequent ion-beam-induced epitaxial crystallization (IBIEC) with 400 keV Ar ions at 300-400°C has induced a good epitaxial growth up to the surface both for Si1-yCy/Si (y = 0.014 at peak concentration) and for Si1-zSnz/Si (z = 0.029 at peak concentration). X-ray diffraction measurements have shown a growth of Si1-yCy/Si with smaller tensile strain than for Si1-yCy/Si grown by solid phase epitaxial growth (SPEG) up to 650°C. Photoluminescence measurements have revealed properties of defect related to I1(Ar) line and G line emissions for IBIEC-grown Si1-yCy/Si samples. IBIEC has induced an incomplete crystalline growth and a loss of implanted Sn atoms for Si1-zSnz/Si (z = 0.086 at peak concentration).

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U2 - 10.1016/0169-4332(96)00327-3

DO - 10.1016/0169-4332(96)00327-3

M3 - Article

AN - SCOPUS:0030564309

SN - 0169-4332

VL - 100-101

SP - 498

EP - 502

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization

Abstract

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