Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization

Engineering & Materials Science

• Semiconductor alloys 100%
• Ion beams 68%
• Ion implantation 65%
• Crystallization 52%
• Epitaxial growth 45%
• Ions 44%
• Photoluminescence 26%
• Binary alloys 23%
• Tensile strain 19%
• Crystalline materials 16%
• Atoms 16%
• X ray diffraction 15%
• Thin films 15%
• Semiconductor materials 14%
• Substrates 11%
• Defects 11%

Physics & Astronomy

• ion implantation 44%
• ion beams 37%
• crystallization 37%
• synthesis 35%
• ions 17%
• binary alloys 12%
• solid phases 11%
• photoluminescence 8%
• defects 6%
• diffraction 6%
• thin films 6%
• atoms 6%
• x rays 5%

Chemical Compounds

• Ion Implantation 59%
• Semiconductor 36%
• Alloy 33%
• Crystallization 33%
• Ion 19%
• Photoluminescence 12%
• Strain 11%
• X-Ray Diffraction 8%
• Surface 5%