Abstract
Ring-opening metathesis polymerization (ROMP) using Grubbs third-generation catalyst directly yielded a norbornene-based polymer bearing robust redox-active radicals without any protection. Successive addition of imidazolium-containing norbornene in a one-pot reaction during ROMP produced pendant radical- and ion-containing block copolymers. The diode-structured thin-film devices fabricated with the obtained block polymers that had morphologies of spheres, lamellae, and inverse spheres exhibited conductive switching (write-once read-many-times, WORM) under a bias voltage, which revealed the dominant effect of the location of radicals and ions in the microphase-segregated domains on memory characteristics.
| Original language | English |
|---|---|
| Pages (from-to) | 703-707 |
| Number of pages | 5 |
| Journal | ACS Macro Letters |
| Volume | 3 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2014 Aug 19 |
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ASJC Scopus subject areas
- Organic Chemistry
- Materials Chemistry
- Polymers and Plastics
- Inorganic Chemistry
Cite this
Synthesis of pendant radical- and ion-containing block copolymers via ring-opening metathesis polymerization for organic resistive memory. / Suga, Takeo; Sakata, Miki; Aoki, Kohei; Nishide, Hiroyuki.
In: ACS Macro Letters, Vol. 3, No. 8, 19.08.2014, p. 703-707.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Synthesis of pendant radical- and ion-containing block copolymers via ring-opening metathesis polymerization for organic resistive memory
AU - Suga, Takeo
AU - Sakata, Miki
AU - Aoki, Kohei
AU - Nishide, Hiroyuki
PY - 2014/8/19
Y1 - 2014/8/19
N2 - Ring-opening metathesis polymerization (ROMP) using Grubbs third-generation catalyst directly yielded a norbornene-based polymer bearing robust redox-active radicals without any protection. Successive addition of imidazolium-containing norbornene in a one-pot reaction during ROMP produced pendant radical- and ion-containing block copolymers. The diode-structured thin-film devices fabricated with the obtained block polymers that had morphologies of spheres, lamellae, and inverse spheres exhibited conductive switching (write-once read-many-times, WORM) under a bias voltage, which revealed the dominant effect of the location of radicals and ions in the microphase-segregated domains on memory characteristics.
AB - Ring-opening metathesis polymerization (ROMP) using Grubbs third-generation catalyst directly yielded a norbornene-based polymer bearing robust redox-active radicals without any protection. Successive addition of imidazolium-containing norbornene in a one-pot reaction during ROMP produced pendant radical- and ion-containing block copolymers. The diode-structured thin-film devices fabricated with the obtained block polymers that had morphologies of spheres, lamellae, and inverse spheres exhibited conductive switching (write-once read-many-times, WORM) under a bias voltage, which revealed the dominant effect of the location of radicals and ions in the microphase-segregated domains on memory characteristics.
UR - http://www.scopus.com/inward/record.url?scp=84906303497&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84906303497&partnerID=8YFLogxK
U2 - 10.1021/mz500273z
DO - 10.1021/mz500273z
M3 - Article
AN - SCOPUS:84906303497
VL - 3
SP - 703
EP - 707
JO - ACS Macro Letters
JF - ACS Macro Letters
SN - 2161-1653
IS - 8
ER -