Synthesis of SiC layer on metal silicon from SiO by a chemical vapor deposition process

Norihiro Murakawa, Tomonori Iizuka, Masanori Eguchi, Kohei Tatsumi

Research output: Contribution to journalArticle

Abstract

A new process for forming an SiC layer is proposed in which a surface of metal silicon is exposed to gaseous SiO and a gaseous carbon compound at around 1400C, thereby an SiC layer is formed substantially only on the surface of metal silicon. The resulting SiC layer is of crystalline cubic SiC and a few tens m in thickness.We consider that the carbon of the SiC layer derives from the gaseous carbon compound and the gaseous SiO promotes the formation of the SiC layer, therefore this process for forming the SiC layer can be defined as one of chemical vapor deposition processes.

Original languageEnglish
Pages (from-to)516-519
Number of pages4
JournalNippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
Volume125
Issue number6
DOIs
Publication statusPublished - 2017 Jun 1

Fingerprint

Silicon
Chemical vapor deposition
Carbon
Metals
vapor deposition
silicon
synthesis
metals
carbon compounds
Crystalline materials
carbon

Keywords

  • Coating
  • CVD
  • Polysilicon
  • SiC
  • Silicon single crystal
  • SiO

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Synthesis of SiC layer on metal silicon from SiO by a chemical vapor deposition process. / Murakawa, Norihiro; Iizuka, Tomonori; Eguchi, Masanori; Tatsumi, Kohei.

In: Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan, Vol. 125, No. 6, 01.06.2017, p. 516-519.

Research output: Contribution to journalArticle

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