Synthesizing 1T-1H Two-Phase Mo1-xWxS2 Monolayers by Chemical Vapor Deposition

Ziqian Wang, Yuhao Shen, Yoshikazu Ito, Yongzheng Zhang, Jing Du, Takeshi Fujita, Akihiko Hirata, Zheng Tang, Mingwei Chen

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

1T-1H metal-semiconductor interfaces in two-dimensional (2D) transition-metal dichalcogenides (TMDs) play a crucial role in utilizing the band gaps of TMDs for applications in electronic devices. Although the 1T-1H two-phase structure has been observed in exfoliated 2D nanosheets and chemically or physically treated TMDs, it cannot in principle be achieved in large-scale TMD monolayers grown by chemical vapor deposition (CVD), which is a fabrication method for electronic device applications, because of the metastable nature of the 1T phase. In this study we report CVD growth of 1T-1H two phase TMD monolayers by controlling thermal strains and alloy compositions. It was found that in-plane thermal strains arising from the difference in thermal expansion coefficients between TMD monolayers and substrates can drive the 1H to 1T transition during cooling after CVD growth. Moreover, grain boundaries in the 2D crystals act as the nucleation sites of the 1T phase and the lattice strain perturbations from alloying noticeably promote the formation of the metastable 1T phase. This work has an important implication in tailoring structure and properties of CVD grown 2D TMDs by phase engineering.

Original languageEnglish
Pages (from-to)1571-1579
Number of pages9
JournalACS Nano
Volume12
Issue number2
DOIs
Publication statusPublished - 2018 Feb 27
Externally publishedYes

Fingerprint

Transition metals
Chemical vapor deposition
Monolayers
transition metals
vapor deposition
Metastable phases
Nanosheets
Phase structure
Alloying
electronics
alloying
Thermal expansion
thermal expansion
Grain boundaries
Energy gap
Nucleation
grain boundaries
Phase transitions
Metals
nucleation

Keywords

  • 2D materials
  • chemical vapor deposition
  • phase engineering
  • phase transition
  • transition-metal dichalcogenide alloys

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Wang, Z., Shen, Y., Ito, Y., Zhang, Y., Du, J., Fujita, T., ... Chen, M. (2018). Synthesizing 1T-1H Two-Phase Mo1-xWxS2 Monolayers by Chemical Vapor Deposition. ACS Nano, 12(2), 1571-1579. https://doi.org/10.1021/acsnano.7b08149

Synthesizing 1T-1H Two-Phase Mo1-xWxS2 Monolayers by Chemical Vapor Deposition. / Wang, Ziqian; Shen, Yuhao; Ito, Yoshikazu; Zhang, Yongzheng; Du, Jing; Fujita, Takeshi; Hirata, Akihiko; Tang, Zheng; Chen, Mingwei.

In: ACS Nano, Vol. 12, No. 2, 27.02.2018, p. 1571-1579.

Research output: Contribution to journalArticle

Wang, Z, Shen, Y, Ito, Y, Zhang, Y, Du, J, Fujita, T, Hirata, A, Tang, Z & Chen, M 2018, 'Synthesizing 1T-1H Two-Phase Mo1-xWxS2 Monolayers by Chemical Vapor Deposition', ACS Nano, vol. 12, no. 2, pp. 1571-1579. https://doi.org/10.1021/acsnano.7b08149
Wang Z, Shen Y, Ito Y, Zhang Y, Du J, Fujita T et al. Synthesizing 1T-1H Two-Phase Mo1-xWxS2 Monolayers by Chemical Vapor Deposition. ACS Nano. 2018 Feb 27;12(2):1571-1579. https://doi.org/10.1021/acsnano.7b08149
Wang, Ziqian ; Shen, Yuhao ; Ito, Yoshikazu ; Zhang, Yongzheng ; Du, Jing ; Fujita, Takeshi ; Hirata, Akihiko ; Tang, Zheng ; Chen, Mingwei. / Synthesizing 1T-1H Two-Phase Mo1-xWxS2 Monolayers by Chemical Vapor Deposition. In: ACS Nano. 2018 ; Vol. 12, No. 2. pp. 1571-1579.
@article{151569d48cd64648a175785ae9d6cd9f,
title = "Synthesizing 1T-1H Two-Phase Mo1-xWxS2 Monolayers by Chemical Vapor Deposition",
abstract = "1T-1H metal-semiconductor interfaces in two-dimensional (2D) transition-metal dichalcogenides (TMDs) play a crucial role in utilizing the band gaps of TMDs for applications in electronic devices. Although the 1T-1H two-phase structure has been observed in exfoliated 2D nanosheets and chemically or physically treated TMDs, it cannot in principle be achieved in large-scale TMD monolayers grown by chemical vapor deposition (CVD), which is a fabrication method for electronic device applications, because of the metastable nature of the 1T phase. In this study we report CVD growth of 1T-1H two phase TMD monolayers by controlling thermal strains and alloy compositions. It was found that in-plane thermal strains arising from the difference in thermal expansion coefficients between TMD monolayers and substrates can drive the 1H to 1T transition during cooling after CVD growth. Moreover, grain boundaries in the 2D crystals act as the nucleation sites of the 1T phase and the lattice strain perturbations from alloying noticeably promote the formation of the metastable 1T phase. This work has an important implication in tailoring structure and properties of CVD grown 2D TMDs by phase engineering.",
keywords = "2D materials, chemical vapor deposition, phase engineering, phase transition, transition-metal dichalcogenide alloys",
author = "Ziqian Wang and Yuhao Shen and Yoshikazu Ito and Yongzheng Zhang and Jing Du and Takeshi Fujita and Akihiko Hirata and Zheng Tang and Mingwei Chen",
year = "2018",
month = "2",
day = "27",
doi = "10.1021/acsnano.7b08149",
language = "English",
volume = "12",
pages = "1571--1579",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "2",

}

TY - JOUR

T1 - Synthesizing 1T-1H Two-Phase Mo1-xWxS2 Monolayers by Chemical Vapor Deposition

AU - Wang, Ziqian

AU - Shen, Yuhao

AU - Ito, Yoshikazu

AU - Zhang, Yongzheng

AU - Du, Jing

AU - Fujita, Takeshi

AU - Hirata, Akihiko

AU - Tang, Zheng

AU - Chen, Mingwei

PY - 2018/2/27

Y1 - 2018/2/27

N2 - 1T-1H metal-semiconductor interfaces in two-dimensional (2D) transition-metal dichalcogenides (TMDs) play a crucial role in utilizing the band gaps of TMDs for applications in electronic devices. Although the 1T-1H two-phase structure has been observed in exfoliated 2D nanosheets and chemically or physically treated TMDs, it cannot in principle be achieved in large-scale TMD monolayers grown by chemical vapor deposition (CVD), which is a fabrication method for electronic device applications, because of the metastable nature of the 1T phase. In this study we report CVD growth of 1T-1H two phase TMD monolayers by controlling thermal strains and alloy compositions. It was found that in-plane thermal strains arising from the difference in thermal expansion coefficients between TMD monolayers and substrates can drive the 1H to 1T transition during cooling after CVD growth. Moreover, grain boundaries in the 2D crystals act as the nucleation sites of the 1T phase and the lattice strain perturbations from alloying noticeably promote the formation of the metastable 1T phase. This work has an important implication in tailoring structure and properties of CVD grown 2D TMDs by phase engineering.

AB - 1T-1H metal-semiconductor interfaces in two-dimensional (2D) transition-metal dichalcogenides (TMDs) play a crucial role in utilizing the band gaps of TMDs for applications in electronic devices. Although the 1T-1H two-phase structure has been observed in exfoliated 2D nanosheets and chemically or physically treated TMDs, it cannot in principle be achieved in large-scale TMD monolayers grown by chemical vapor deposition (CVD), which is a fabrication method for electronic device applications, because of the metastable nature of the 1T phase. In this study we report CVD growth of 1T-1H two phase TMD monolayers by controlling thermal strains and alloy compositions. It was found that in-plane thermal strains arising from the difference in thermal expansion coefficients between TMD monolayers and substrates can drive the 1H to 1T transition during cooling after CVD growth. Moreover, grain boundaries in the 2D crystals act as the nucleation sites of the 1T phase and the lattice strain perturbations from alloying noticeably promote the formation of the metastable 1T phase. This work has an important implication in tailoring structure and properties of CVD grown 2D TMDs by phase engineering.

KW - 2D materials

KW - chemical vapor deposition

KW - phase engineering

KW - phase transition

KW - transition-metal dichalcogenide alloys

UR - http://www.scopus.com/inward/record.url?scp=85042730874&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85042730874&partnerID=8YFLogxK

U2 - 10.1021/acsnano.7b08149

DO - 10.1021/acsnano.7b08149

M3 - Article

VL - 12

SP - 1571

EP - 1579

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 2

ER -